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公开(公告)号：EP0179610B1
公开(公告)日：1993-01-20
申请号：EP85307442.5
申请日：1985-10-16
发明人： Jucha, Rhett B. , Brown, Frederick W. , Kohan, Stanford P. , Davis, Cecil J. , Spencer, John E. , Johnson, Randall E.
IPC分类号： H01J37/32 , H01J37/18 , H01L21/306
CPC分类号： H01J37/185
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22.发明公开Use of STM-like system to measure node voltage on integrated circuits 失效Anwendung eine STM-artigen Systems zur Messung der Knotenspannung in integrierten Schaltungen。
公开(公告)号：EP0485202A2
公开(公告)日：1992-05-13
申请号：EP91310287.7
申请日：1991-11-06
IPC分类号： G01R31/302 , G01R31/28
CPC分类号： G01R31/302
摘要： A method and apparatus for measuring node voltage on an integrated circuit is disclosed herein. A sensing needle 10, wich is connected to supply voltage 20, is positioned directly above node 12 on integrated circuit 14. Tunneling or field emission current 30 is produced in sensing needle 10 due to the difference in potential between sensing needle 10 and node 12. Supply voltage 20 is adjusted to set current 30 to an initial value. When the voltage on node 12 changes, the current 30 will also try to change. When a change in current 30 is detected, a signal 28 is generated to adjust supply voltage 20 such that current 30 returns to its initial value. Consequently, the change in supply voltage 20 mirrors the change in voltage on node 12.
摘要翻译： 本文公开了一种用于测量集成电路上的节点电压的方法和装置。 连接到电源电压20的感测针10位于集成电路14上的节点12的正上方。由于感测针10和节点12之间的电位差，在感测针10中产生了隧道或场致发射电流30。 调整电源电压20以将电流30设定为初始值。 当节点12上的电压变化时，电流30也将改变。 当检测到电流30的变化时，产生信号28以调整电源电压20，使得电流30返回到其初始值。 因此，电源电压20的变化反映了节点12上的电压变化
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公开(公告)号：EP0210605B1
公开(公告)日：1991-02-27
申请号：EP86110241.6
申请日：1986-07-25
发明人： Wooldridge, Timothy A. , Bonifield, Thomas D. , Abernathy, Joe V. , Davis, Cecil J. , Jucha, Rhett B.
IPC分类号： H01J37/32
CPC分类号： H01J37/32431
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24.发明公开
公开(公告)号：EP0405875A1
公开(公告)日：1991-01-02
申请号：EP90306900.3
申请日：1990-06-25
IPC分类号： C23C16/30 , C23C16/18 , H01L31/0256
CPC分类号： C23C16/306 , H01L31/02161 , H01L31/1828 , Y02E10/543
摘要： The deposition of zinc sulfide films (16) using dimethylzinc (46) and hydrogen sulfide (44) in a vacuum processor reactor (50) provides a low temperature process applicable for high volume production of infrared focal planes. These layers (16) of zinc sulfide are used as insulators and infrared anti-reflective coatings which are free of contamination relative to physical vapor deposited ZnS films. The zinc sulfide layers (16) are formed by evacuating a chamber (62) and mixing hydrogen sulfide gas (44) and dimethylzinc gas (46) at. specific operating conditions until the desired ZnS film thickness is obtained. The rate of growth of the zinc sulfide (16) film is controlled by varying the temperature, pressure, and the relative flow rates of the hydrogen sulfide gas (44) and the dimethylzinc gas (46).
摘要翻译： 在真空处理器反应器（50）中使用二甲基锌（46）和硫化氢（44）沉积硫化锌膜（16）提供了适用于大量生产红外焦平面的低温工艺。 这些硫化锌层（16）用作绝缘体和红外防反射涂层，其相对于物理气相沉积的ZnS膜无污染。 硫化锌层（16）通过抽空室（62）并将硫化氢气体（44）和二甲基锌气体（46）混合而形成。 直到获得所需的ZnS膜厚度为止。 通过改变硫化氢气体（44）和二甲基锌气体（46）的温度，压力和相对流速来控制硫化锌（16）膜的生长速率。
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公开(公告)号：EP0299249A1
公开(公告)日：1989-01-18
申请号：EP88110012.7
申请日：1988-06-23
CPC分类号： C23C16/482 , C23C16/402 , C23C16/517
摘要： A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O₂, N₂O, CO₂ and NO₂, and monosilane, for example, SiH₂Cl₂ or SiH₄.
摘要翻译： 利用远程（1326）和原位等离子体（1314,1312）的组合在低压处理模块（1300）中沉积氧化硅膜的方法和等离子体由氦气，氧气源 ，例如O 2，N 2 O，CO 2和NO 2，以及甲硅烷，例如SiH 2 Cl 2或SiH 4。
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公开(公告)号：EP0299245A1
公开(公告)日：1989-01-18
申请号：EP88110008.5
申请日：1988-06-23
CPC分类号： C23C16/517 , C23C16/345 , C23C16/482
摘要： A process for deposition of silicon nitride which utilizes the combination of remote(1326) and in situ plasma (1312,1314) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, N₂ or NH₃, and SiH₄ or SiH₂Cl₂.
摘要翻译： 在低压处理模块（1300）中利用远程（1326）和原位等离子体（1312,1314）的组合沉积氮化硅的方法，等离子体是由氦气，氮气或NH 3的混合物产生的，以及 SiH 4或SiH 2 Cl 2。
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公开(公告)号：EP0578011B1
公开(公告)日：1997-03-26
申请号：EP93109535.0
申请日：1993-06-15
IPC分类号： H01J37/32
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/509 , C23C16/517 , H01J37/32165 , H01J37/32192 , H01J37/32541 , H01J37/32587 , H01J37/32688 , Y10S438/905
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28.发明公开Structure and method for semiconductor processing 失效Vorrichtung und Verfahren zur Halbleitersbearbeitung
公开(公告)号：EP0690666A1
公开(公告)日：1996-01-03
申请号：EP95110150.0
申请日：1995-06-29
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译： 具有安装在其中的电感耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。
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29.发明公开
公开(公告)号：EP0684635A2
公开(公告)日：1995-11-29
申请号：EP95105909.6
申请日：1995-04-20
IPC分类号： H01L21/3105 , H01L21/768
CPC分类号： H01L21/76828 , H01L21/31058
摘要： This is a curing method of low-k dielectric material in a semiconductor device and system for such. The method may comprise: depositing metal interconnection lines; depositing the low-k dielectric material layer over the lines; and curing the low-k dielectric material layer with a heating lamp for less than 10 minutes, wherein the heating lamp provides optical radiation energy in the infrared spectral range of about 1 micron to 3.5 microns in wavelength. The heating lamp may be a tungsten-halogen lamp.
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公开(公告)号：EP0578011A1
公开(公告)日：1994-01-12
申请号：EP93109535.0
申请日：1993-06-15
IPC分类号： H01J37/32
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/509 , C23C16/517 , H01J37/32165 , H01J37/32192 , H01J37/32541 , H01J37/32587 , H01J37/32688 , Y10S438/905
摘要： A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity. The circuitry (74) electrically connect screen (70) to a power source (100) or (104) to cause screen (70) electrode to affect process plasma density and distribution. Any of the plasma electrodes showerhead assembly (52), chuck (24), or screen electrode (66) may be connected to a low-frequency power source (108), a high-frequency power source (100 or 132), electrical ground (110), or may remain electrically floating (94).
摘要翻译： 多电极等离子体处理系统（10）为半导体器件制造提供了灵活的等离子体处理能力。 等离子体处理设备（10）包括气体喷头组件（52），射频卡盘（24）和屏幕电极（66）。 屏幕电极（66）包括用于定位在处理室（10）内的基座（68），并且由诸如陶瓷或聚四氟乙烯的绝缘材料制成。 穿孔筛（70）与基座（68）成一体，并且经由射频电源（104）从等离子体产生气体产生等离子体。 屏幕（70）具有多个通道（78），以允许等离子体和处理室壁的相互作用。 屏幕（70）围绕喷头组件（52）和半导体晶片（22）并且可以影响包括等离子体密度和均匀性的整个半导体晶片等离子体处理环境（62）。 电路（74）将屏幕（70）电连接到电源（100）或（104）以使屏幕（70）电极影响处理等离子体密度和分布。 任何等离子电极喷头组件（52），卡盘（24）或屏蔽电极（66）可以连接到低频电源（108），高频电源（100或132），电接地 （110），或者可以保持电浮动（94）。
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