PARTICULATE PREVENTION IN ION IMPLANTATION
    28.
    发明公开
    PARTICULATE PREVENTION IN ION IMPLANTATION 审中-公开
    Partikular预防AT离子注入

    公开(公告)号:EP1891658A2

    公开(公告)日:2008-02-27

    申请号:EP06760675.6

    申请日:2006-06-02

    Abstract: A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source (200), a power supply (216) operable to supply power to a filament (214) and mirror electrode (218) of the ion source, a workpiece handling system, and a controller (228), wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.

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