摘要:
The present invention intends to provide a surface-emitting laser light source using a two-dimensional photonic crystal in which the efficiency of extracting light in a direction perpendicular to the surface is high. In a laser light source provided with a two-dimensional photonic crystal layer 24 created from a plate-shaped matrix body in which a large number of holes 25 are periodically arranged and an active layer 23 arranged on one side of the two-dimensional photonic crystal layer 24, the holes 25 are created to be columnar with a predetermined cross-sectional shape such as a circular shape, and the main axis of each of the columnar holes is tilted to a surface of the matrix body. When provided with this two-dimensional photonic crystal layer 24, the surface-emitting laser source using a two-dimensional photonic crystal has a Q ⊥ value (i.e. a Q value in a direction perpendicular to the surface) of several thousands, which is suitable for an oscillation of laser light, and the efficiency of extracting light is high in the direction perpendicular to the surface.
摘要:
In an optical scanning apparatus, when it is assumed that a scanning direction of light beams defected from a deflector (5) is a main scanning direction, and a direction orthogonal to the main scanning direction and to optical axes of both a first and a first optical systems (2, 3, 4, 11, 10, 6, 7, 8) is a sub scanning direction, a distance between the outermost light emitting diodes of a light source (1) in the main scanning direction is longer than that in the sub scanning direction.
摘要:
A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms (168), an electrically and/or optically pumped gain-region (160), (161), (162), a distributed bragg reflecting mirror-stack (165), a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror (164). Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any sti mulated-emission (169) made to undergo amplifying oscillation within the invention's phase-conjugating resonator. Resulting in stablized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps.
摘要:
Optical parametric oscillator including a semiconductor microcavity being configured to spatially localize polaritons of at least three quantized polariton energy levels to effect an optical parametric oscillation.
摘要:
Improved resonant reflectors (54, 70, 90) are provided for increased mode control of optoelectronic devices (10). Some of the resonant reflectors (54, 70) provide improved mode control while not requiring significant additional processing steps, making them ideal for commercial applications. Other resonant reflectors (90) reduce or eliminate abrupt changes in the reflectively of the resonant reflector (90) across an optical cavity of an optoelectronic device (10), allowing them to reduce or eliminate undesirable diffraction effects that are common in many resonant reflectors.
摘要:
An optoelectronic device that provides isolation between a resonant reflector (84) and an adjacent conducting layer (86) of the optoelectronic device. Isolation may be accomplished by providing a buffer or cladding layer (80) between the resonant reflector (84) and the adjacent conducting layer (86) of the optoelectronic device. The cladding or buffer layer (80) is preferably sufficiently thick, or has a sufficiently low refractive index relative to the refractive index of the waveguide 882) of the resonant reflector (84), to substantially prevent energy in the evanescent tail of the guided mode in the waveguide (82) from entering the adjacent conductive layer (86) of the optoelectronic device.
摘要:
A selective reflector (10), for selectively preventing reflection of light passing therethrough. The selective reflector (10) comprising at least one layer characterized by an angle-dependent reflectivity function. The angle-dependent reflectivity function being decreasing upon at least one interval of increasing impinging angle of the light on a surface of the at least one layer, such that when said impinging angle is within a predetermined range, the reflection of light is substantially prevented.
a first active stack of layers comprising an optical cavity, (17) at least one quantum dot located in said cavity; (17) an upper contact provided above said optical cavity; (23) a lower contact provided below said cavity, (11) wherein an abrupt material interface defines the whole lateral boundary of said cavity and said cavity is patterned such that it provides two dimensional lateral confinement of photon modes, said upper an lower contacts (11,23) being arranged such that current can flow vertically across the cavity between the two contacts (11,23).
摘要:
An optical system that includes at least two optical emitters (350, 352, 354, 356) and/or optical receivers (370, 372, 374, 376) that have a corresponding guided-mode grating resonant reflector filter (52, 84, 132) (GMGRF) is disclosed. Each GMGRF is preferably tuned to a unique wavelength and/or polarization by adjusting selected GMGRF parameters, such as the grating period and/or thickness of the grating or other layers. One advantage of this construction is that the various optical emitters and/or optical receivers may be finely tuned, often lithographically, to provide fine wavelength resolution and/or polarization control. For WDM and WDD applications, this may allow closely-spaced optical transmission channels, and may simplify the wavelength-selective WDM and WDD operations required for simultaneous transmission of the channels.