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87 条记录 (耗时 0.013 秒)

    Micro-fabricated device with thermoelectric device and method of making
    23.
    发明公开
    Micro-fabricated device with thermoelectric device and method of making 有权
    用其制备的热电装置和方法制造的微制造的部件

    公开(公告)号：EP1443568A2

    公开(公告)日：2004-08-04

    申请号：EP03020338.4

    申请日：2003-09-09

    申请人： Hewlett-Packard Development Company, L.P.

    发明人： McKinnell, James C. ,  Liebeskind, John ,  Chen, Chien-Hua

    IPC分类号： H01L35/32 ,  H01L23/38

    CPC分类号： H01L35/32 ,  G11B9/10 ,  H01L23/38 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/10158 ,  Y10S257/93 ,  H01L2924/00

    摘要： A micro-fabricated device (100, 300, 400, 500), includes a support structure (140, 240, 340, 440, 540) having an aperture (142, 242, 342, 442, 542) formed therein, and a device substrate (130, 230, 330, 430, 530) disposed within the aperture. The micro-fabricated device further includes a thermally isolating structure (120, 220, 320, 420, 520) thermally coupling the device substrate to the support structure. The thermally isolating structure includes at least one n-doped region (152, 252, 352, 452, 452') and at least one p-doped region (154, 254, 354, 454, 454') formed on or in the thermally isolating structure and separated from each other. In addition, the thermally isolating structure includes an electrical interconnect (156, 256, 356, 456) connecting at least one n-doped region and at least one p-doped region, forming an integrated thermoelectric device.

    摘要翻译： 甲微加工装置（100，300，400，500）包括支撑结构（140，240，340，440，540），其具有上开口（142，242，342，442，542）形成于其中，以及设备 衬底（130，230，330，430，530）的开口内设置。 的微制造的装置还包括一个热隔离结构（120，220，320，420，520）热耦合的器件衬底到所述支撑结构。 该热隔离结构包括至少形成在或者在热一个n型掺杂区域（152，252，352，452，452“）和至少一个p型掺杂区域（154，254，354，454，454”） 隔离结构和从海誓山盟分离。 另外，热隔离结构包括连接至少一个n掺杂的区域和至少一个p掺杂区电互连（156，256，356，456），集成热电装置形成。

    THERMOELEKTRISCHES ELEMENT
    24.
    发明授权
    THERMOELEKTRISCHES ELEMENT 有权
    热敏元件

    公开(公告)号：EP1287566B1

    公开(公告)日：2003-10-22

    申请号：EP01923379.0

    申请日：2001-04-25

    申请人： Span, Gerhard

    发明人： Span, Gerhard

    IPC分类号： H01L35/08 ,  H01L35/32 ,  H01L35/26

    CPC分类号： H01L35/16 ,  H01L35/22 ,  H01L35/32 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2924/3025 ,  Y10S257/93 ,  H01L2924/00

    摘要： The invention relates to a thermoelectric element comprising at least one n-type layer (1) and at least one p-type layer (2) of one or more doped semiconductors, whereby the n-type layer(s) (1) and the p-type layers(s) (2) are arranged to form at least one pn-type junction (3). At least one n-type layer (1) and at least one p-type layer (2) are contacted in an electrically selective manner, and a temperature gradient (T1, T2) is applied or tapped parallel (x-direction) to the boundary layer (3) between at least one n-type layer (1) and p-type layer (2). At least one pn-type junction is formed essentially along the entire, preferably longest, extension of the n-type layer(s) (1) and of the p-type layer(s) (2) and thus essentially along the entire boundary layer (3) thereof.

    Thermoelectric module
    26.
    发明公开
    Thermoelectric module 审中-公开
    热电模块

    公开(公告)号：EP1104032A2

    公开(公告)日：2001-05-30

    申请号：EP00125580.1

    申请日：2000-11-22

    申请人： Morix Co., Ltd. ,  Honda Giken Kogyo Kabushiki Kaisha

    发明人： Yamada, Kazukiyo ,  Tashiro, Kohei ,  Esaki, Hidenori ,  Kudo, Tomohide

    IPC分类号： H01L35/04 ,  H01L35/32

    CPC分类号： H01L35/32 ,  H01L35/04 ,  H01L2924/0002 ,  Y10S257/93 ,  H01L2924/00

    摘要： Connection of the leads for a thermoelectric module is readily accomplished, and after connection, the tensile strength of the connection is enhanced. One ends of the front and back side lead patterns for the thermoelectric module 16A and 16B , formed on a support plate 1, are connected by solder 24 to a Cu rod 2C provided at an end of a group of thermoelectric semiconductor elements affixed to the support plate 1 . After the front end of the lead for the thermoelectric module 22A is bent and passed from the side of the front lead pattern 16A through a through hole formed between the front and back side lead patterns 16A and 16B, the front end is connected to the back side lead pattern 16B by solder 25.

    INTEGRATED CIRCUIT PACKAGE HAVING A THERMOELECTRIC COOLING ELEMENT THEREIN
    27.
    发明公开
    INTEGRATED CIRCUIT PACKAGE HAVING A THERMOELECTRIC COOLING ELEMENT THEREIN 有权
    WITH A热电冷却元件集成电路

    公开(公告)号：EP1070350A1

    公开(公告)日：2001-01-24

    申请号：EP99914320.9

    申请日：1999-03-31

    申请人： Raytheon Company

    发明人： MEISSNER, Edward, G.

    IPC分类号： H01L23/38

    CPC分类号： H01L23/38 ,  H01L35/32 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  Y10S257/93 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A package (10, 60, 80) has a chamber (24) containing an integrated circuit (13) which detects infrared radiation. The package has on one side of the integrated circuit a portion (23) transparent to infrared radiation, and has on the opposite side of the integrated circuit a first part (12) which supports the integrated circuit. A second part (36) of the package is spaced from the first part (12) on the side thereof opposite from the integrated circuit. Thermoelectric cooling elements (51) are provided between and are thermally coupled to the first and second parts. Electrically conductive further elements (44) are also disposed between the first and second parts. A first arrangement (32, 29, 17, 18) electrically couples a terminal on the integrated circuit to a first end of the further element. A second arrangement (41, 38) electrically couples each further element to a respective pad (42) disposed on the side of the second part opposite from the first part. Some of the thermoelectric cooling elements may have one cross-sectional shape, others may have a different cross-sectional shape, and the further elements may have still another cross-sectional shape.

    AN IMPROVED METHOD OF MANUFACTURE AND RESULTING THERMOELECTRIC MODULE
    29.
    发明公开
    AN IMPROVED METHOD OF MANUFACTURE AND RESULTING THERMOELECTRIC MODULE 失效
    一种改进的热电模块和模块导致

    公开(公告)号：EP0804867A1

    公开(公告)日：1997-11-05

    申请号：EP94931979.0

    申请日：1994-10-21

    申请人： Fritz, Robert E. ,  Monkowski, Joseph R.

    发明人： Fritz, Robert E. ,  Monkowski, Joseph R.

    IPC分类号： F25B21 ,  H01L35

    CPC分类号： H01L35/32 ,  Y10S257/93

    摘要： An apparatus and method of manufacturing a thermoelectric module is provided. A first electrically conductive pattern (22) is defined on a first substrate (20) and a second electrically conductive pattern (23) is defined on a second substrate (21). Alternating bars (54, 55) of a first thermoelectric material and a second thermoelectric material are arranged parallel to each other. The bars are fixed into place on the first conductive pattern by an effective thermal and electrical connection with the conductive pattern. One such connection means is soldering. Then the bars are separated into elements (64, 65). The second substrate is positioned over the elements and fixed to the elements to complete the manufacture of the TEM.

    Noise reducing element and electrical circuit having the same
    30.
    发明公开
    Noise reducing element and electrical circuit having the same 失效
    降噪元件和具有相同的电路

    公开(公告)号：EP0739044A3

    公开(公告)日：1996-11-06

    申请号：EP96108582.6

    申请日：1991-09-18

    申请人： MELCOR JAPAN CO., LTD. ,  Uemura, Kinichi

    发明人： Ohtsubo, Kazuo ,  Uemura, Kinichi

    IPC分类号： H01L35/00 ,  H03H2/00

    CPC分类号： H04R23/002 ,  H01L35/00 ,  H01L35/28 ,  H02H9/044 ,  H04R3/04 ,  Y10S257/93

    摘要： There is disclosed a noise-reducing element (1) with at least one junction (4, 5, 6) between component (2, 3) of different kinds of electroconductive materials. The electrodes are constituted by a part of at least of the components. Further, the thermoelectric power of the respective materials in the element exceeds + or - 50 µVK -1 at the temperature of the element under the state in which the noise-reducing element is activated. Also, there is rectifying action to a harmless extent at the junction.

    摘要翻译： 公开了一种降噪元件（1），在不同种类的导电材料的元件（2,3）之间具有至少一个结（4,5,6）。 电极由部件中的至少一部分构成。 此外，元件中的各个材料的热电功率在降噪元件被激活的状态下在元件的温度下超过+或-50μVK-1。 此外，交汇处正在进行无害化的整顿行动。