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公开(公告)号：EP1605310A2
公开(公告)日：2005-12-14
申请号：EP05012154.0
申请日：2005-06-06
发明人： Endo, Masayuki , Sasago, Masaru
IPC分类号： G03F7/16
CPC分类号： G03F7/70341 , G03F7/0395 , G03F7/168 , G03F7/2041 , G03F7/70991
摘要： An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.
摘要翻译： 曝光系统包括用清洁液清洗形成在晶片上的抗蚀膜的表面的清洁单元和用于在设置在抗蚀剂膜和投影透镜之间的浸渍液进行图案曝光的曝光单元。
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公开(公告)号：EP1602976A1
公开(公告)日：2005-12-07
申请号：EP05009720.3
申请日：2005-05-03
发明人： Kishimura, Shinji , Endo, Masayuki , Sasago, Masaru , Ueda, Mitsuru , Imori, Hirokazu , Fukuhara, Toshiaki
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108
摘要： A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R 5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R 6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.摘要翻译： 抗蚀剂材料包括含有具有由以下化学式1的通式表示的单元的化合物的基础聚合物：其中R 1，R 2和R 3相同或不同，并且为 碳原子数1以上20以下的氢原子，氟原子，直链烷基，支链或环状烷基或氟化烷基， R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5为氢原子，直链烷基，支链或环状烷基或碳数为1以上且20以下的氟化烷基或被酸释放的保护基; R 6为具有环状酯化合物的基团，具有羟基的脂环式化合物的基团或具有包含六氟异丙醇的化合物的基团。
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公开(公告)号：EP1553454A2
公开(公告)日：2005-07-13
申请号：EP04029998.4
申请日：2004-12-17
发明人： Endo, Masayuki , Sasago, Masaru
CPC分类号： G03F7/40 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/322
摘要： In a pattern formation method of this invention, a resist film is formed on a substrate and pattern exposure is performed by selectively irradiating the resist film with exposing light. Subsequently, the resist film is developed after the pattern exposure, and the developed resist film is rinsed with an aqueous solution including cyclodextrin.
Methods are also disclosed involving either developing with a solution including cyclodextrin or rinsing with an aqueous solution including a surfactant.
Thus a fine resist pattern made of the resist film is formed without causing pattern collapse.摘要翻译： 在本发明的图案形成方法中，在基板上形成抗蚀剂膜，并通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。 随后，在图案曝光之后使抗蚀剂膜显影，并且用包含环糊精的水溶液冲洗显影的抗蚀剂膜。 还公开了涉及用包括环糊精在内的溶液显影或用包含表面活性剂的水溶液漂洗的方法。 因此，形成由抗蚀剂膜制成的精细抗蚀剂图案而不引起图案塌陷。
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公开(公告)号：EP1143296A3
公开(公告)日：2003-12-17
申请号：EP01113822.9
申请日：1996-03-06
发明人： Endo, Masayuki , Katsuyama, Akiko
CPC分类号： G03F7/70866 , G03F7/0045 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26
摘要： A method for forming a pattern, comprising: a first step of setting the humidity in an enviroment for forming a resist pattern at a low level when an impurity concentration within the environment for forming a resist pattern is larger than a predetermined value but setting the humidity at a high level when the impurity concentration within the enviroment for forming a resist pattern is smaller than the predetermined value; a second step of forming a resist film by coating a substrate with a resist; a third step of exposing the resist film through a mask within the environment with the humidity set at the first step; and a forth step of developing the exposed resist film to thereby form a resist pattern.
摘要翻译： 一种形成图案的方法，包括：第一步骤，当用于形成抗蚀剂图案的环境中的杂质浓度大于预定值但设定湿度时，将用于形成抗蚀剂图案的环境中的湿度设定在低水平 当用于形成抗蚀剂图案的环境中的杂质浓度小于预定值时处于高水平; 第二步骤，通过用抗蚀剂涂覆衬底来形成抗蚀剂膜; 第三步骤，在湿度设定在第一步骤的环境中通过掩模曝光抗蚀剂膜; 以及第四步，对曝光的抗蚀剂膜进行显影，从而形成抗蚀剂图案。
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公开(公告)号：EP0778613B1
公开(公告)日：2001-03-28
申请号：EP96119388.5
申请日：1996-12-03
发明人： Katsuyama, Akiko , Endo, Masayuki
IPC分类号： H01L21/312 , B05D3/06 , G03F7/00
CPC分类号： G03F7/11 , G03F7/16 , H01L21/312
摘要： After forming a TiN film on a semiconductor substrate, a surface treatment agent in a gas phase, which is obtained by bubbling trimethylsilyl methylsulfonate with a nitrogen gas, is supplied onto the TiN film. The TiN film is then coated with a chemically amplified positive resist including an acid generator and a compound which can attain alkali solubility through the function of an acid, and a pre-bake process is subsequently conducted, thereby forming a resist film. The resist film is then exposed with a KrF excimer laser by using a desired mask. Through this exposure, an acid is generated from the acid generator included in the resist film. Since sulfonic acid produced from trimethylsilyl methylsulfonate weakens the function as a base of a nitrogen atom having a lone pair, the acid generated from the acid generator is not deactivated at the bottom of the resist film. As a result, a resist pattern with a satisfactory shape free from footing can be formed.
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公开(公告)号：EP0883163A2
公开(公告)日：1998-12-09
申请号：EP98112004.1
申请日：1995-06-30
IPC分类号： H01L21/027 , G03F7/26
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates a base in response to the radiation of KrF excimer laser light and which reacts with the base. If the resist film is irradiated with the KrF excimer laser light through a mask, the base is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the base. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of e.g. methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译： 通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生碱，并与基底反应。 如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生基底，使得暴露部分的表面被基底亲水化。 如果将水蒸汽供应到抗蚀膜的表面，则水从暴露部分的表面扩散到深部。 如果例如蒸气。 甲基三乙氧基硅烷在相对湿度为95％的空气中被喷涂到抗蚀膜的表面上，在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。
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37.发明公开Manufacturing method and apparatus for semiconductor device 失效Vorrichtung und Verfahren zur Herstellung von einem Halbleiteranordnung
公开(公告)号：EP0855621A2
公开(公告)日：1998-07-29
申请号：EP98101196.8
申请日：1998-01-23
发明人： Endo, Masayuki , Fukumoto, Toru , Ohsaki, Hiromi
CPC分类号： G03F7/0757 , G03F7/00 , G03F7/0045 , G03F7/0751 , G03F7/70991 , H01L21/3121
摘要： In a clean room, after conducting a surface treatment on the surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a chemically amplified resist, thereby forming a first resist film. Then, the first resist film is successively subjected to exposure, PEB and development, thereby forming a first resist pattern of the chemically amplified resist. Next, in the same clean room, after conducting a surface treatment on the surface of the semiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a non-chemically amplified resist, thereby forming a second resist film. Then, the second resist film is successively subjected to the exposure, the PEB and the development, thereby forming a second resist pattern of the non-chemically amplified resist.
摘要翻译： 在洁净室中，在用4-三甲基甲硅烷氧基-3-戊烯-2-酮在半导体衬底的表面上进行表面处理之后，用化学放大抗蚀剂涂覆半导体衬底的处理表面，从而形成第一抗蚀剂 电影。 然后，依次对第一抗蚀剂膜进行曝光，PEB显影，形成化学放大抗蚀剂的第一抗蚀剂图案。 接下来，在相同的无尘室中，在用4-二甲基 - 正己基甲硅烷氧基-3-戊烯-2-酮在半导体基板的表面上进行表面处理之后， 化学放大抗蚀剂，从而形成第二抗蚀剂膜。 然后，第二抗蚀剂膜依次进行曝光，PEB和显影，从而形成非化学放大抗蚀剂的第二抗蚀剂图案。
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公开(公告)号：EP0617455A3
公开(公告)日：1997-03-12
申请号：EP94102597.5
申请日：1994-02-21
IPC分类号： H01L21/027
CPC分类号： H01L21/31111 , H01L21/0274 , H01L21/266
摘要： An improved semiconductor device fabrication technique is disclosed. A resist layer, composed of a chemical compound which generates an acid when exposed to energy light and a resin which contains protecting groups that are removed from the resin by acid, is formed on top of a semiconductor substrate. The resist layer is subjected to a lithography and a development process and is formed into a resist pattern. This resist pattern is exposed to ultraviolet beams, and the chemical compound generates an acid and the protecting groups are removed from the resin. As a result of such an elimination reaction, the surface of the resist pattern becomes coarse. Thereafter, an implant of ions is carried out to the semiconductor substrate using the resist pattern as a mask. The surface of the semiconductor substrate is cleaned using a cleaning solution, and the resist pattern with a coarse surface can easily and completely be removed from the semiconductor substrate.
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公开(公告)号：EP0747767A2
公开(公告)日：1996-12-11
申请号：EP96103506.0
申请日：1996-03-06
发明人： Endo, Masayuki , Katsuyama, Akiko
IPC分类号： G03F7/004
CPC分类号： G03F7/70866 , G03F7/0045 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26
摘要： The composition of a resist material is determined so that the film thinning quantity of the resist pattern is increased when the profile of a resist pattern which is formed in advance tends to be a T-top profile as compared with a reference pattern profile but so that the film thinning quantity of the resist pattern is decreased when the profile of the resist pattern which is formed in advance tends to be a round-shoulder profile as compared with the reference pattern profile. After coating a semiconductor substrate at its top with the resist material whose composition is determined as such to thereby form a resist film, the resist film is exposed through a mask. The exposed resist film is developed, whereby a resist pattern is obtained.
摘要翻译： 确定抗蚀剂材料的组成，使得当与参考图案轮廓相比，当预先形成的抗蚀剂图案的轮廓趋于为T形顶部轮廓时，抗蚀剂图案的膜变薄量增加， 与参考图案轮廓相比，当预先形成的抗蚀剂图案的轮廓倾向于是圆肩轮廓时，抗蚀剂图案的膜变薄量减小。 在其半导体衬底的顶部涂覆其组成如此形成抗蚀剂材料的抗蚀剂材料，从而形成抗蚀剂膜，通过掩模曝光抗蚀剂膜。 曝光的抗蚀剂膜被显影，由此获得抗蚀剂图案。
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公开(公告)号：EP0712047A2
公开(公告)日：1996-05-15
申请号：EP95117948.0
申请日：1995-11-14
CPC分类号： G03F7/70658 , G03F7/038 , G03F7/20 , G03F7/265 , G03F7/30 , G03F7/38 , G03F7/70675
摘要： A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found. Additionally, also from the second correlation, develop time corresponding to a target resist pattern linewidth and to an estimated exposure energy dose is found, and according to the develop time found, a resist pattern is formed.
摘要翻译： 获得第一相关性，其是在抗蚀剂层上曝光之后产生的潜像高度与给定长度的显影时间之间的抗蚀图案线宽之间的相关性。 另外，获得第二相关性，其是每个曝光能量剂量的显影时间与抗蚀剂图案线宽之间的相关性。 确定在实际曝光的抗蚀剂层上产生的潜像的高度。 从第一相关性可以看出，作为对应于潜像高度和给定长度的显影时间的抗蚀剂图案线宽的估计抗蚀剂图案线宽。 从第二相关性可以看出，作为与给定的显影时间长度对应的曝光能量剂量和估计的抗蚀剂斑纹线宽的估计曝光能量剂量。 此外，从第二相关性，也可以发现对应于目标抗蚀剂图案线宽的显影时间和估计的曝光能量剂量，并且根据发现的显影时间形成抗蚀剂图案。
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