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59 条记录 (耗时 0.016 秒)

    Light-emitting diode having a surface electrode of a tree-like form
    34.
    发明公开
    Light-emitting diode having a surface electrode of a tree-like form 失效
    Lichtemittierende Diode mit baumartigerOberflächenelektrode。

    公开(公告)号：EP0544512A1

    公开(公告)日：1993-06-02

    申请号：EP92310770.0

    申请日：1992-11-25

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Watanabo, Masanori ,  Matsumoto, Mitsuhiro ,  Nakatsu, Hiroshi ,  Takeoka, Tadashi ,  Yamamoto, Osamu ,  Sasaki, Kazuaki

    IPC分类号： H01L33/00

    CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38

    摘要： A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

    摘要翻译： LED的表面（330）上的表面电极（316）具有焊盘（318），并且还包括至少一级分支（319a，...，319d），其从所述焊盘（318）线性延伸，第二 从一级分支（319a，...，319d）发散并线性延伸的三阶分支（320a，320b和320c）以及从所述一级分支（319a，...，319d）发散并线性延伸的三阶分支（322a，322b和322c） 二阶分支（320a，320b和320c）。 表面电极（316）外的焊盘（318）不与下面的半导体层（331）电接触，而表面电极（316）和半导体层（331）在端部彼此电接触 的最高级分支（322a，322b和322c）。 此外，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极（316）下方的无效发光被相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至能够以较高的效率使更短的波长的光能够被排出。

    A semiconductor laser device
    38.
    发明公开
    A semiconductor laser device 失效
    Halbleiterlaservorrichtung。

    公开(公告)号：EP0376752A2

    公开(公告)日：1990-07-04

    申请号：EP89313703.4

    申请日：1989-12-29

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Hosoba, Hiroyuki ,  Matsumoto, Mitsuhiro ,  Matsui, Sadayoshi ,  Morimoto, Taiji

    IPC分类号： H01S3/19 ,  H01S3/085 ,  H01L33/00

    CPC分类号： H01S5/10 ,  H01S5/16 ,  H01S5/2234 ,  H01S5/2235 ,  H01S5/24

    摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate (1) having a ridge portion (9), the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer (2) formed on the substrate (1) including the ridge portion (9); at least one striped groove (11) formed on the center of the ridge portion (9) through the current blocking layer (2); and a multi-layered structure disposed on the current blocking layer (2), the multi-layered structure succes­sively having a first cladding layer (3), an active layer (4) for laser oscillation, and a second cladding layer (5); wherein at least two side grooves (10) are symmetrically formed on both sides of the center region of the ridge portion (9) with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.

    摘要翻译： 公开了一种半导体激光器件，其包括具有脊部分（9）的半导体衬底（1），脊部的宽度在小面附近比在器件内部更小; 形成在包括所述脊部分（9）的所述基底（1）上的电流阻挡层（2）; 通过所述电流阻挡层（2）形成在所述脊部（9）的中心的至少一个条纹槽（11）; 以及设置在电流阻挡层（2）上的多层结构，所述多层结构依次具有第一覆层（3），激光振荡用有源层（4）和第二覆层（5）。 其中至少两个侧槽（10）以与其附近的区域相同的宽度对准地形成在所述脊部（9）的中心区域的两侧。 另外，公开了半导体激光装置的制造方法。

    A semiconductor laser device and a method for the production of the same
    39.
    发明公开
    A semiconductor laser device and a method for the production of the same 失效
    一种半导体激光器件及其制造方法

    公开(公告)号：EP0311445A3

    公开(公告)日：1989-10-18

    申请号：EP88309409.6

    申请日：1988-10-07

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Taneya, Mototaka ,  Takahashi, Kosei ,  Hayakawa, Toshiro ,  Matsui, Sadayoshi ,  Matsumoto, Mitsuhiro ,  Hosoba, Hiroyuki

    IPC分类号： H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/34 ,  H01S5/3432 ,  H01S5/4031

    摘要： A semiconductor laser device comprising a first layer that is of a first conductivity type; a second layer that is disposed on the first layer, the second layer having a forbidden bandgap smaller than that of the first layer and having a refraction index larger than that of the first layer; a third layer that is of a second conductivity type, the third layer being disposed over the second layer, having a forbidden bandgap larger than that of the second layer, and having a refraction index smaller than that of the second layer; a fourth layer that functions as a quantum well, the fourth layer being disposed between the second and third layers and the thickness of the fourth layer being the de Broglie's wavelength or less; and at least one striped mesa, the lower portion of which is constituted by the third layer, wherein the fourth layer has a forbidden bandgap that is larger than that of the energy of photons generated by the second layer, and moreover the fourth layer has the etching characteristics that are different from those of the third layer positioned just above the fourth layer.

    Semiconductor laser array device
    40.
    发明公开
    Semiconductor laser array device 失效
    Halbleiterlaser-Vielfachanordnung。

    公开(公告)号：EP0301818A2

    公开(公告)日：1989-02-01

    申请号：EP88306896.7

    申请日：1988-07-27

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Hosoba, Hiroyuki ,  Matsumoto, Mitsuhiro ,  Taneya, Mototaka ,  Matsui, Sadayoshi ,  Morimoto, Taiji

    IPC分类号： H01S3/25 ,  H01S3/19

    CPC分类号： H01S5/4031 ,  H01S5/2234

    摘要： A semiconductor laser array device has a substrate (1) with first grooves (9) with a given pitch, a current blocking layer (6) with second grooves (91) disposed on the substrate (1) and a heterostructure multi-layered crystal (7,8,10,11,12,13) with an active layer (11) disposed on the current blocking layer (6). The position of each of the first grooves (9) is shifted half a pitch from that of each of the second grooves (91) in the area (A) corresponding to the laser oscillation operating area that is created within the active layer (11), but each of the first grooves (9) is positioned over each of the second grooves (91) in the area (B,C) corresponding to the non-laser oscillation operating area within the active layer (11). The second grooves (91) reach the substrate (1) through the current blocking layer (6) in the area (A) corresponding to the laser oscillation operating area, which results in current paths.

    摘要翻译： 半导体激光器阵列器件具有具有给定间距的第一凹槽（9）的衬底（1），具有设置在衬底（1）上的第二凹槽（91）的电流阻挡层（6）和异质结构多层晶体 7,8,10,11,12,13），其中设置在电流阻挡层（6）上的有源层（11）。 每个第一凹槽（9）的位置与对应于在活性层（11）内产生的激光振荡操作区域的区域（A）中的每个第二凹槽（91）的位置相距一半， 但是在对应于有源层（11）内的非激光振荡操作区域的区域（B，C）中，每个第一凹槽（9）被定位在每个第二凹槽（91）上。 第二凹槽（91）通过对应于激光振荡操作区域的区域（A）中的电流阻挡层（6）到达基板（1），这导致电流路径。