摘要:
Disclosed are a channel layer and a transistor including the channel layer. The channel layer may include a multi-layered structure. Layers forming the channel layer may have different mobilities and/or carrier densities. The channel layer may have a double layered structure including a lower layer and an upper layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the lower layer and the upper layer and thickness thereof.
摘要:
A magnetic random access memory (MRAM) having middle oxide layers formed by a hetero-method and a method of manufacturing the same are provided. The MRAM including a magnetic tunneling junction (MTJ) formed of a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer. The tunneling oxide layer is formed by an atomic layer deposition (ALD) method, and the other material layers, particularly the oxidation preventing layer, are formed by a method other than the ALD method.
摘要:
A magnetic random access memory using magnetic domain drag is provided. The magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer; a data input unit electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output unit electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, the magnetic random access memory has more excellent performance than that using a switching field to record data.
摘要:
Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor.
摘要:
A touch panel includes a sensing unit having a first sub sensing unit configured to output a first sensing current corresponding to a first touch type, and a second sub sensing unit corresponding to a second touch type which is different than the first touch type.
摘要:
In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.
摘要:
A light-sensing apparatus in which a light sensor transistor in a light-sensing pixel is formed of an oxide semiconductor transistor for sensing light, a method of driving the light-sensing apparatus, and an optical touch screen apparatus including the light-sensing apparatus. The light-sensing apparatus includes a light-sensing pixel array having a plurality of light-sensing pixels arranged in rows and columns, and a plurality of gate lines which are arranged in a row direction and respectively provide a gate voltage to the light-sensing pixel. Each of the light-sensing pixels includes a light sensor transistor for sensing light and a switch transistor for outputting a light-sensing signal from the light sensor transistor, and gates of the light sensor transistors of the light-sensing pixels arranged in an arbitrary row are connected to a gate line arranged in a row previous or next to the arbitrary row.
摘要:
A touch panel configured to drive a liquid crystal according to a voltage difference between first and second electrodes. The touch panel includes at least one display unit configured to generate an image voltage and apply the image voltage to the first electrode. The image voltage corresponds to image data to be displayed in response to activation of a display gate line. The touch panel further includes at least one sensing unit configured to sense, in response to activation of a sensor gate line, a voltage variation of the second electrode to determine whether a finger capacitance is generated by a physical touch on the touch panel.