Abstract:
The invention relates to a composite (1) comprising a first semiconductor substrate (4) having at least one MEMS-component (2) and at least one second semiconductor substrate (4), wherein at least one layer (6) comprising germanium is bonded eutectically with at least one layer (3) comprising aluminum. According to the invention, the layer (3) comprising aluminum is provided on the first semiconductor substrate (1) and the layer (6) comprising germanium on the second semiconductor substrate (4). The invention further relates to a production method for a composite (1).
Abstract:
Des substrats à aligner comportent des microbobines disposées au niveau de leurs faces en regard. Dans une phase d'alignement, au moins les microbobines du premier substrat sont alimentées, tandis que l'inductance des microbobines du second substrat est mesurée. Les microbobines sont de préférence des microbobines planes en forme de spirale ou de méandre.
Abstract:
The process comprises the following steps: a) a first element (3) or a plurality of said first elements (3) is/are machined in a first silicon wafer (1) keeping said elements (3) joined together via material bridges (5); b) step a) is repeated with a second silicon wafer (2) in order to machine a second element (4), differing in shape from that of the first element (3), or a plurality of said second elements (4); c) the first and second elements (3, 4) or the first and second wafers (1, 2) are applied, face to face, with the aid of positioning means (6, 7); d) the assembly formed in step c) undergoes oxidation; and e) the parts (10) are separated from the wafers (1, 2). Micromechanical timepiece parts obtained according to the process.
Abstract:
Dispositif (100) à structure pré-libérée comportant au moins : - au moins un premier empilement, comprenant au moins une première couche (102) à base d'au moins un premier matériau, disposé contre un second empilement comprenant au moins une seconde couche (104) à base d'au moins un second matériau, - au moins une cavité (112) fermée, réalisée dans le premier et/ou le second empilement, et disposée entre une portion (114) du premier empilement formant la structure pré-libérée et le second empilement, - au moins un espaceur (116) disposé dans la cavité (112) et reliant la portion (114) du premier empilement au second empilement.
Abstract:
Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.
Abstract:
A micro fluid system support unit includes a first support body (2), a first adhesive layer (1a) arranged on the surface of the first support body (2), a first hollow filament group consisting of a plurality of hollow filaments (501 to 508) arranged with an arbitrary shape on the surface of the first adhesive layer (1a), a second hollow filament group consisting of a plurality of hollow filaments (511 to 518) arranged in the direction orthogonal to the first hollow filament group, a second adhesive layer (1b) arranged on the surface of the second hollow filament group, and a second support body (6) arranged on the surface of the second adhesive layer (1b). The first and the second hollow filament group constitute a flow passage layer.
Abstract:
The invention relates to a method for producing a semiconductor structure comprising a superficial layer (20'), at least one embedded layer (36, 46), and a support (30), which method comprises: a step of forming, on a first support, patterns (23) in a first material, a step of forming a semiconductor layer, between and on said patterns, a step of assembling said semiconductor layer with a second support (30).
Abstract:
Microfluidic devices having wall structures comprised of sintered glass frit and further including a glass, glass-ceramic or ceramic membrane structure sealed by a sintered seal to said wall structures, such that a a fluid passage or chamber is defined at least in part by the wall structures and said membrane structure. This allows for changes in pressure within the fluid passage or chamber to cause deflections of the membrane structure, providing for direct measurement of pressure within the device. The microfluidic device may have both floors and walls of sintered frit, or may have only walls of sintered frit, with planar floor-like substrate structures, thicker than the membrane structure defining the vertical boundaries of the internal passages. The device may include multiple fluid passages or chambers each defined at least in part by a membrane structure. Multiple membrane structures may be used in a single device, and one single membrane structure may be used for multiple passages or chamber.
Abstract:
A support unit for a microfluidic system includes a first support; a first adhesive layer provided on a surface of the first support; and a hollow filament laid on a surface of the first adhesive layer to have an arbitrary shape and functioning as a flow channel layer of the microfluidic system. No groove to receive the hollow filament is arranged on the first support.