公开(公告)号：EP1572577B1

公开(公告)日：2018-04-18

申请号：EP03796155.4

申请日：2003-12-04

Applicant: Soitec

Inventor： Bruel, Michel

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81C2201/019 ,  C08F210/16 ,  C08F4/65916 ,  C08F210/14 ,  C08F2500/12 ,  C08F2500/04

公开(公告)号：EP2554510B1

公开(公告)日：2018-01-10

申请号：EP12177755.1

申请日：2012-07-25

Applicant: Teledyne Dalsa Semiconductor Inc.

Inventor： Johnstone, Robert ,  Martel, Stéphane

IPC: B81C1/00

CPC classification number: B81C1/00182 ,  B81B2201/054 ,  B81C2201/019 ,  B81C2203/0735

Abstract: A microfabricated device is fabricated by depositing a first metal layer on a substrate to provide a first electrode of an electrostatic actuator, depositing a first structural polymer layer over the first metal layer, depositing a second metal layer over said first structural polymer layer to form a second electrode of the electrostatic actuator, depositing an insulating layer over said first structural polymer layer, planarizing the insulating layer, etching the first structural polymer layer through the insulating layer and the second metal layer to undercut the second metal layer, providing additional pre-formed structural polymer layers, at least one of which has been previously patterned, and finally bonding the additional structural layers in the form of a stack over the planarized second insulating layer to one or more microfluidic channels. The technique can also be used to make cross over channels in devices without electrostatic actuators, in which case the metal layers can be omitted.

公开(公告)号：EP3156361B1

公开(公告)日：2017-11-08

申请号：EP16190126.9

申请日：2016-09-22

Applicant: Thales

Inventor： FILHOL, Fabien ,  LEFORT, Pierre-Olivier ,  LEVERRIER, Bertrand ,  QUER, Régis ,  CHAUMET, Bernard

IPC: B81B7/00

CPC classification number: B81B7/0016 ,  B81B7/0048 ,  B81B7/0051 ,  B81B2203/0307 ,  B81C1/00269 ,  B81C3/001 ,  B81C2201/019 ,  H01L23/10

公开(公告)号：EP3208070A1

公开(公告)日：2017-08-23

申请号：EP15850483.7

申请日：2015-10-09

Applicant: Ushio Denki Kabushiki Kaisha

Inventor： WASAMOTO, Makoto ,  TAKEMOTO, Fumitoshi ,  SUZUKI, Shinji

IPC: B29C65/02 ,  B29C65/14

CPC classification number: B29C65/1406 ,  B29C65/02 ,  B29C65/7847 ,  B29C65/8215 ,  B29C65/8223 ,  B29C66/0222 ,  B29C66/0242 ,  B29C66/026 ,  B29C66/028 ,  B29C66/11 ,  B29C66/1122 ,  B29C66/45 ,  B29C66/54 ,  B29C66/712 ,  B29C66/7465 ,  B29L2031/756 ,  B32B38/0008 ,  B32B38/164 ,  B32B2037/0092 ,  B32B2038/166 ,  B32B2309/68 ,  B32B2310/0472 ,  B32B2310/0831 ,  B32B2310/14 ,  B81C3/001 ,  B81C2201/019 ,  C08J5/121 ,  C08J7/00 ,  G01N2035/00455 ,  H01L21/48

Abstract: Provided is a workpiece bonding method that makes it possible to achieve a joining state with a high strength and to obtain a good repeatability of the joining state.
A workpiece bonding method according to the present invention is a workpiece bonding method for bonding two workpieces to each other, each of the two workpieces being composed of a material selected from the group consisting of synthetic resin, glass, silicon wafer, crystal and sapphire, the workpiece bonding method including: a surface activation step of activating a bonded surface of at least one of the workpieces; and a laminating step of laminating the two workpieces such that respective bonded surfaces contact with each other, and a pretreatment step of removing moisture from the bonded surface of the workpiece that is to be subjected to the surface activation step is performed before the surface activation step is performed.

Abstract translation: 本发明提供一种工件接合方法，其能够实现高强度的接合状态并且获得接合状态的良好的重复性。 根据本发明的工件接合方法是用于将两个工件彼此接合的工件接合方法，两个工件中的每一个由选自合成树脂，玻璃，硅晶片，晶体和蓝宝石的材料组成， 该工件接合方法包括：激活至少一个工件的接合表面的表面激活步骤; 以及将两个工件层叠以使各自的接合面彼此接触的层压步骤，并且在表面活化步骤之前执行从要进行表面活化步骤的工件的接合表面去除水分的预处理步骤 被执行。

公开(公告)号：EP2093797B1

公开(公告)日：2017-05-31

申请号：EP09354005.2

申请日：2009-02-10

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Rousseau, Maxime ,  Viala, Bernard

IPC: B81C3/00 ,  H01L23/64 ,  H01L25/065 ,  H01L25/00

CPC classification number: B81C3/004 ,  B81B2207/017 ,  B81C2201/019 ,  B81C2203/051 ,  H01L23/645 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00

公开(公告)号：EP2368837B1

公开(公告)日：2015-08-05

申请号：EP10157258.4

申请日：2010-03-22

Applicant: Waser, Werner ,  Brinkhaus, Bernhard

Inventor： Waser, Werner ,  Brinkhaus, Bernhard

IPC: B81B3/00

CPC classification number: H05K1/02 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2201/019 ,  G01R3/00 ,  Y10T29/49002

公开(公告)号：EP2277197B1

公开(公告)日：2015-01-07

申请号：EP09727616.6

申请日：2009-04-03

Applicant: The Charles Stark Draper Laboratory, Inc.

Inventor： RACZ, Livia, M. ,  TEPOLT, Gary, B. ,  THOMPSON, Jeffrey, C. ,  LANGDO, Thomas, A. , 

IPC: B81C1/00 ,  H01L23/13 ,  H01L23/498 ,  H01L21/48 ,  H01L21/683 ,  H01L25/10

CPC classification number: H01L21/486 ,  B81B2207/012 ,  B81C1/00333 ,  B81C2201/019 ,  B81C2201/0191 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/04105 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92144 ,  H01L2224/9222 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10T29/49124 ,  H01L2924/00

Abstract: An interposer comprises a substrate and a plurality of posts. Each of the posts extends substantially through a thickness of the substrate. A method for forming an interposer comprises forming a fill hole in a first side of a substrate and a cavity in a second side of the substrate. The cavity is in fluidic communication with the fill hole. A plurality of posts is formed in the cavity. An encapsulant is injected through the fill hole into the cavity to encapsulate the plurality of posts.

公开(公告)号：EP2075223B1

公开(公告)日：2014-12-17

申请号：EP08172569.9

申请日：2008-12-22

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Caplet, Stéphane

IPC: B81C1/00

CPC classification number: B81C1/00944 ,  B81C2201/019

公开(公告)号：EP2315037A4

公开(公告)日：2014-10-29

申请号：EP09808199

申请日：2009-08-10

Applicant: KONICA MINOLTA OPTO INC

Inventor： HIRAYAMA HIROSHI ,  TAKIMURA TOSHINORI

IPC: G01N35/08 ,  B01J19/00 ,  B29C65/02 ,  B81B1/00 ,  B81C3/00 ,  G01N37/00

CPC classification number: B01L3/502707 ,  B01L2300/044 ,  B01L2300/0816 ,  B01L2300/0883 ,  B01L2300/0887 ,  B01L2300/12 ,  B29C65/02 ,  B29C65/06 ,  B29C65/0618 ,  B29C65/08 ,  B29C65/10 ,  B29C65/16 ,  B29C65/18 ,  B29C66/006 ,  B29C66/0344 ,  B29C66/1122 ,  B29C66/53461 ,  B29C66/71 ,  B29C66/73366 ,  B29C66/9141 ,  B29C66/91421 ,  B29C66/91431 ,  B29C66/91645 ,  B29C66/919 ,  B29C66/91941 ,  B29C66/929 ,  B29C66/949 ,  B29C2071/022 ,  B29K2023/06 ,  B29K2023/12 ,  B29K2025/00 ,  B29K2027/06 ,  B29K2027/08 ,  B29K2031/04 ,  B29K2033/12 ,  B29K2033/20 ,  B29K2067/00 ,  B29K2069/00 ,  B29K2077/00 ,  B29K2083/00 ,  B29K2101/12 ,  B29K2995/0018 ,  B29K2995/0035 ,  B29L2031/756 ,  B81B2201/051 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C1/00119 ,  B81C2201/019 ,  B81C2203/032 ,  G01N27/44791 ,  Y10T156/10 ,  B29K2067/003 ,  B29K2025/06 ,  B29K2023/38

Abstract: A microchip (1) in which a resinous film can be inhibited from sagging into a channel. The microchip (1) comprises: a resinous base (2) having a channel groove forme therein; and a resinous film bonded to that side of the base on which the channel groove has been formed. A fine channel (3) including channels (3A) and channels (3B) is formed by the channel groove and the resinous film (10). The total length of the channels (3B), which extend parallel to the X direction for the resinous base (2), is large than the total length of the channels (3A), which extend parallel to the Y direction for the resinous base (2). The resinous base (2) has been bonded to the resinous film so that the sides parallel to the channels (3B) are parallel to the TD for the resinous film and that the sides parallel to the channels (3A) are parallel to the MD for the resinous film.

公开(公告)号：EP2778121A1

公开(公告)日：2014-09-17

申请号：EP14158272.6

申请日：2014-03-07

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Nicolas, Stéphane

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81C1/00285 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/031

Abstract: Procédé d'encapsulation d'au moins un micro-dispositif (100), comportant au moins la mise en oeuvre des étapes de :
- solidarisation d'une face d'un premier substrat (102) comprenant au moins un matériau non perméable vis-à-vis de gaz nobles, contre un deuxième substrat comprenant du verre et d'épaisseur supérieure ou égale à environ 300 µm ;
- gravure d'au moins une cavité (108) à travers le deuxième substrat telle que des parois latérales de la cavité soient formées au moins en partie par des portions restantes (110) du deuxième substrat et qu'une paroi supérieure de la cavité soit formée par une partie (112) de ladite face du premier substrat ;
- scellement anodique des portions restantes du deuxième substrat contre un troisième substrat (114) comprenant le micro-dispositif, tel que le micro-dispositif soit encapsulé dans la cavité.

Abstract translation: 该方法包括将第一衬底（102）的表面粘合在一起，该表面包括与第二玻璃衬底接触的惰性气体不可渗透的材料。 通过第二基板蚀刻空腔（108），使得空腔的侧壁部分地由第二基板的剩余部分（110）形成，并且空腔的上壁由部分（112）形成， 第一衬底。 对其中形成有微器件（100）的第三基板进行剩余部分的阳极接合，使得微器件被封装在空腔中。 惰性气体不可渗透的材料是金属和/或硅。