摘要:
A process for the chlorodephenylation of a phenyl-containing disilane to produce alkylhalodisilanes is described. The process comprises (A) adding an aluminum halide, AlX₃, to a phenyl-containing disilane, having the formula, R 3-a (C₆H₅) a SiSiR 3-b (C₆H₅) b , wherein the phenyl-containing disilane has a melting point lower than about 50°C.; and the aluminum halide is added to a concentration greater than about 1 mole percent relative to the phenyl-containing disilane; (B) contacting the phenyl-containing disilane and the aluminum halide, in the absence of a solvent, with excess anhydrous hydrogen halide gas at a temperature less than about 50°C.; (C) facilitating conversion of the phenyl-containing disilane to the alkylhalodisilane; and (D) isolating and recovering the alkylhalodisilane.
摘要:
A method for producing chlorosilanes, which are useful in a wide range of industrial field as an intermediate for organosilicon products such as silicone rubbers, silicone oils, silicone resins, etc. as well as a raw material for the production of organic chemicals such as medicines, agricultural chemicals, dyestuffs, etc., represented by the general formula,
wherein R₁ and R₄, which may be the same or different, represent an alkyl group having from 1 to 5 carbon atoms, a chloromethyl group, an ethynyl group or a halogen atom; R₂ and R₃, which may be the same or different, represent an alkyl group having from 1 to 3 carbon atoms; R₅ and R₆, which may be the same or different, represent an alkyl group having from 1 to 2 carbon atoms; and R₇ represents an alkyl group having from 1 to 18 carbon atoms, which comprises reacting a disiloxane represented by the general formula, wherein R₁, R₂, R₃, R₄, R₅ and R₆ are as defined above, or a silanol represented by the general formula, wherein R₂, R₃ and R₇, are as defined above, with phosgene in the presence or absence of a tertiary amide.
摘要:
Die vorliegende Erfindung behandelt die Spaltung von Siloxanen mit Chlorwasserstoff unter Bildung von Organochlorsilanen. Erfindungsgemäß wird diese Spaltung bei Temperaturen unterhalb von 20°C durchgeführt, wobei sich die Di- und Trihydrate des Chlorwasserstoffs bilden. Diese sinken als spezifisch schwerere flüssige Phase ab und können auf diese Weise leicht von den Organochlorsilanen abgetrennt werden. Der bevorzugte Temperaturbereich, bei der die erfindungsgemäße Verfahrensweise durchgeführt wird, liegt zwischen +10°C und -10°C; dabei werden Ausbeuten bis zu 99% an dem gewünschten Organochlorsilan erhalten. Das Verfahren läßt sich auch kontinuierlich durchführen.
摘要:
Described are electrolyte compositions having at least one salt and at least one compound selected from the group consisting of: wherein “a” is from 1 to 3; “b” is 1 or 2; 4≧“a”+“b”≧2; X is a halogen; R can be alkoxy or substituted alkoxy, among other moieties, and R1 is alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, or substituted alkoxy. Also described are electrochemical devices that use the electrolyte composition.
摘要:
Gegenstand der Erfindung ist ein kontinuierliches Verfahren zur Herstellung von Alkylchlorsilanen aus den Rückständen der Direktsynthese von Alkylchlorsilanen, welche flüssige Bestandteile mit einem Siedepunkt von mindestens 70°C bei 1013 hPa und gegebenenfalls Feststoffe aufweisen mit Chlorwasserstoff, bei dem die Rückstände mit höchstens 200 °C und Chlorwasserstoff mit einer entsprechend höheren Temperatur in einen Reaktor eingeleitet werden, so dass sich eine Reaktionstemperatur von 400 bis 800 °C einstellt.
摘要:
The present invention provides several methods of synthesis and separation in which organic/fluorous phase separation techniques are used to effect separations. The present invention also provides novel compositions of matter comprising fluorous Si, Sn and Ge compounds.
摘要:
The present invention generally relates to methods for making dielectrics for integrated circuit processes and devices. More particularly, the invention relates to multi-level circuit processes, such as damascene processes that utilize metal and metal alloys (e.g., copper and copper alloys) as well as low-k dielectric materials. The methods of the present invention allow for greater control of the dielectric fabrication process.