公开(公告)号：EP2393960A1

公开(公告)日：2011-12-14

申请号：EP10738248.3

申请日：2010-02-08

申请人： Beneq Oy

发明人： PELTONIEMI, Janne ,  SOININEN, Pekka

IPC分类号： C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/44

摘要： The invention relates to a reaction chamber for an atomic layer deposition reactor, the reaction chamber comprising outer walls (2, 4; 40, 42, 44, 46) for providing a reaction space inside the reaction chamber. According to the invention, at least one of the outer walls (2, 4; 40, 42, 44, 46) of the reaction chamber is made from a flexible thinsheet.

摘要翻译： 本发明涉及用于原子层沉积反应器的反应室，反应室包括用于在反应室内提供反应空间的外壁（2,4; 40,42,44,46）。 根据本发明，反应室的至少一个外壁（2,4; 40,42,44,46）由挠性薄片制成。

公开(公告)号：EP2361672A2

公开(公告)日：2011-08-31

申请号：EP11153870.8

申请日：2003-07-01

申请人： Advanced Technology Materials, Inc.

发明人： Gregg, John ,  Battle, Scott ,  Banton, Jeffrey I. ,  Naito, Donn ,  Fuierer, Marianne ,  Laxman, Ravi K.

IPC分类号： B01F3/04 ,  C23C16/00

CPC分类号： C23C16/4483 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/50 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  F17C2203/03 ,  Y02E60/321 ,  Y10S261/65

摘要： A vaporizer delivery system for use in semiconductor manufacturing processes including a plurality of vertically stacked containers (22) for holding a vaporizable source material. Each of the vertically stacked containers includes a plurality of vented protuberances (30) extending into the interior of the each stacked container thereby providing channels for passage of a carrier gas between adjacent vertically stacked containers.

摘要翻译： 一种用于半导体制造工艺的蒸发器输送系统，包括用于保持可蒸发的源材料的多个垂直堆叠的容器（22）。 每个垂直堆叠的容器包括延伸到每个堆叠容器的内部的多个通风突起（30），从而提供用于在相邻的垂直堆叠的容器之间通过载气的通道。

公开(公告)号：EP2304774A2

公开(公告)日：2011-04-06

申请号：EP09774542.6

申请日：2009-07-02

申请人： Applied Materials, Inc.

发明人： LAM, Hyman ,  ZHENG, Bo ,  HUA, Ai ,  JACKSON, Michael ,  YUAN, XiaoXiong ,  WANG, Hou, Gong ,  UMOTOY, Salvador, P. ,  YU, San, Ho

IPC分类号： H01L21/205

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In one embodiment, a showerhead assembly is provided which includes a showerhead plate having top and bottom surfaces, and a radius extending from the center to the outer edge of the showerhead plate, a first plurality of holes in fluid communication with the top and bottom surfaces, positioned within a first zone extending from the center of the showerhead plate to about 25% of the radius of the showerhead plate, and each hole has a diameter of less than 0.1 inches, and a second plurality of holes in fluid communication with the top and bottom surfaces, positioned within a second zone extending from about 25% of the radius of the showerhead plate to about the outer edge of the showerhead plate, and each hole has a diameter of greater than 0.1 inches.

公开(公告)号：EP2267183A1

公开(公告)日：2010-12-29

申请号：EP09723417.3

申请日：2009-03-18

申请人： Mitsui Engineering & Shipbuilding Co., Ltd.

发明人： MURATA, Kazutoshi

IPC分类号： C23C16/52

CPC分类号： C23C16/45544 ,  C23C16/45561 ,  C23C16/52

摘要： An atomic layer film forming apparatus includes a plurality of gas supply pipes (121 - 123) for supplying a source gas to a film forming chamber (101), and an exhaust portion (105) for evacuating the inside of the film forming chamber (101). Valves (131 - 133) are attached to the gas supply pipes (121 - 123), respectively. In the film forming chamber (101), film forming chamber monitors (141 - 149) are arranged to measure a state in the film forming chamber (101). Based on the results of measurement by the film forming chamber monitors (141 - 149), a controller (107) controls the openings or opening times of the valves (131 - 133). The atomic layer film forming apparatus can improve gas uniformity when a plurality of gas supply ports are used.

摘要翻译： 一种原子层成膜装置，具备：向成膜室（101）供给原料气体的多个气体供给管（121〜123）;以及对成膜室（101）的内部进行排气的排气部（105） ）。 阀（131-133）分别连接到气体供应管（121-123）。 在成膜室（101）中，配置成膜室监视器（141〜149），测定成膜室（101）内的状态。 基于成膜室监视器（141-149）的测量结果，控制器（107）控制阀（131-133）的打开或打开时间。 当使用多个气体供应口时，原子层成膜装置可以改善气体均匀性。

公开(公告)号：EP1687460B1

公开(公告)日：2007-12-26

申请号：EP04819061.5

申请日：2004-11-08

申请人： VEECO INSTRUMENTS INC.

发明人： KOOLS, Jacques C.S. ,  BUBBER, Randhir ,  MAO, Ming ,  SCHNEIDER, Thomas Andrew ,  WANG, Jinsong

IPC分类号： C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/45565 ,  C23C16/45591

摘要： A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser plate adjacent to the expansion volume and a reaction chamber. The diffuser plate includes a protrusion located opposite the gas inlet and the protrusion reduces turbulence in the expansion volume.

公开(公告)号：EP1842938A2

公开(公告)日：2007-10-10

申请号：EP07251447.4

申请日：2007-03-30

申请人： GENUS, INC.

发明人： Dalton, Jeremie J. ,  Karim, Ziaul M. ,  Landergan, Ana R

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45544 ,  C23C16/45574

摘要： A gas distribution system (28) for a reactor having at least two distinct gas source orifice array (30, 32) displaced from one another along an axis (2) defined by a gas flow direction from the gas source orifice arrays (30, 32) towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays (30, 32) is located between a higher one of the gas source orifice arrays (30, 32) and the work-piece deposition surface. Orifices (36a, 36d) in the higher one of the gas source orifice arrays (30, 32) may spaced an average of 0.2 - 0.8 times a distance between the higher one of the gas source orifice arrays (30, 32) and the work-piece deposition surface, whiles orifices (44a-44c) in the lower one of the gas source orifice arrays (30, 32) may be spaced an average of 0.1 - 0.4 times a distance between the higher one of the gas source orifice arrays (30, 32) and the work-piece deposition surface.

摘要翻译： 一种用于反应器的气体分配系统（28），其具有至少两个不同的气体源孔口阵列（30,32），所述气体源孔口阵列（30,32）沿着由气体源孔阵列（30,32）的气体流动方向限定的轴线（2） ）朝向工件沉积表面，使得气体源孔阵列（30,32）中的至少一个位于气源孔阵列（30,32）中的较高一个与工件沉积表面 。 气体源孔阵列（30,32）中较高一个的孔（36a，36d）可间隔出较高的一个气源孔阵列（30,32）和工件之间的距离的0.2至0.8倍的平均值 在气体源孔阵列（30,32）中的下一个气体源孔阵列（30,32）中的片状沉积表面，微孔（44a-44c）可以间隔开较高的气源孔阵列之间的距离的0.1至0.4倍 30,32）和工件沉积表面。

公开(公告)号：EP1159465B1

公开(公告)日：2007-02-28

申请号：EP99967400.5

申请日：1999-12-16

申请人： GENUS, INC.

发明人： DOERING, Kenneth ,  GALEWSKI, Carl, J. ,  GADGIL, Prasad, N. ,  SEIDEL, Thomas, E.

IPC分类号： C23C16/00 ,  H05B3/06

CPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/54 ,  C30B25/12 ,  H01J37/3244 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/6719

摘要： A processing station (1201) adaptable to standard cluster tools (1100) has a vertically-translatable pedestal (1215) having wafer-support surface (1307) including a heater plate (1303). At a lower position wafers (1219) may be transferred to and from the processing station (1201), and at an upper position the pedestal (1215) forms an annular pumping passage with a lower circular opening in a processing chamber (1204). A replaceable ring (1253) at the lower opening of the processing chamber (1204) allows process pumping speed to be tailored for different processes. The pedestal (1215) also has a surrounding shroud (1257) defining an annular pumping passage around the pedestal (1215). A two-zone heater plate (1303) is adapted to the top of the pedestal (1215), and connects to a feedthrough (1301) allowing heater plate (1303) to be quickly and simply replaced. The top of the processing chamber (1204) is removable allowing users to remove either the pedestal (1215) or heater (1303) assemblies. The system is adapted to atomic layer deposition processing.

公开(公告)号：EP1745159A2

公开(公告)日：2007-01-24

申请号：EP05760813.5

申请日：2005-05-12

申请人： APPLIED MATERIALS, INC.

发明人： MYO, Nyi Oo ,  CHOI, Kenric ,  KHER, Shreyas ,  NARWANKAR, Pravin ,  POPPE, Steve ,  METZNER, Craig R. ,  DEATEN, Paul

IPC分类号： C23C16/00

CPC分类号： C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

摘要： Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD) . In one embodiment, a chamber contains a chamber lid (832) containing an expanding channel (834) formed within a thermally insulating material (838) either directly within the chamber lid or formed within a funnel liner attached thereon. The chamber further includes at least one conduit (841 a-d) coupled to a gas inlet within the expanding channel and positioned to provide a gas flow in a circular direction, such as a vortex, a helix or a spiral. The chamber may contain a retaining ring (819), an upper process liner (822), a lower process liner (824) or a slip valve liner (826) . Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

摘要翻译： 本发明的实施例提供了用于在诸如原子层沉积（ALD）的气相沉积工艺期间在基板上沉积材料的装置和方法。 在一个实施例中，腔室包含腔室盖（832），腔室盖（832）包含形成于绝热材料（838）内的膨胀通道（834），所述膨胀通道直接位于腔室盖内或形成于附接于其上的漏斗衬里内。 腔室还包括至少一个导管（841a-d），其耦合到膨胀通道内的气体入口并且被定位成提供沿圆形方向（例如涡流，螺旋或螺旋）的气流。 腔室可以包含保持环（819），上部处理衬里（822），下部处理衬里（824）或滑阀衬里（826）。 内衬通常具有抛光的表面光洁度并且包含诸如熔融石英或陶瓷的绝热材料。 在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

公开(公告)号：EP1735480A1

公开(公告)日：2006-12-27

申请号：EP05723535.0

申请日：2005-02-23

申请人： MKS INSTRUMENTS, INC.

发明人： SHAJII, Ali ,  NAGARKATTI, Siddharth ,  BESEN, Matthew, M. ,  CLARK, William, R. ,  SMITH, Daniel, A. ,  AKGERMAN, Bora

IPC分类号： C23C16/455 ,  C23C16/52

CPC分类号： C23C16/45544 ,  C23C16/45527 ,  C23C16/45557 ,  C23C16/52 ,  Y10S438/935

摘要： A system for delivering a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber, a pressure transducer connected to the chamber, an input device for providing a desired mass to be delivered, and a controller connected to the valves, the pressure transducer and the input device. The controller is programmed to receive the desired mass from the input device, close the second valve and open the first valve, receive chamber pressure measurements from the pressure transducer, and close the inlet valve when pressure within the chamber reaches a predetermined level. The controller is then programmed to wait a predetermined waiting period to allow the gas inside the chamber to approach a state of equilibrium, then open the outlet valve at time = t0, and close the outlet valve at time = t* when the mass of gas discharged equals the desired mass.

公开(公告)号：EP1649076A2

公开(公告)日：2006-04-26

申请号：EP04777158.9

申请日：2004-06-28

申请人： Sundew Technologies, LLC

发明人： SNEH, Ofer

IPC分类号： C23C16/448 ,  C30B25/14

CPC分类号： C23C16/4488 ,  C23C16/4409 ,  C23C16/45544 ,  C23C16/45557 ,  C30B25/14 ,  Y10T117/1004

摘要： Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses (700, 700', 700'') and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source (722) within a source space comprising: sensing the accumulation of the chemical on a sensing surface (711); and controlling the temperature of the chemical source depending on said sensed accumulation.