公开(公告)号：EP1325516A4

公开(公告)日：2007-06-06

申请号：EP01973154

申请日：2001-09-18

申请人： ACM RES INC

发明人： WANG HUI

IPC分类号： C25F3/02 ,  H01L21/288 ,  H01L21/304 ,  H01L21/3063 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/76 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76835 ,  C25F3/02 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/7684 ,  H01L2221/1036

摘要： In forming a layer of a semiconductor wafer (100), a dielectric layer is deposited on the semiconductor wafer. The dielectric layer (208) includes material having a low dielectric constant. Recessed (210) and non-recessed (211) areas are formed in the dielectric layer. A metal layer is deposited on the dielectric layer to fill the recessed areas and cover the non-recessed areas. The metal layer is then electropolished to remove the metal layer covering the non-recessed areas while maintaining the metal layer in the recessed areas.

公开(公告)号：EP1697984A2

公开(公告)日：2006-09-06

申请号：EP04812717.9

申请日：2004-12-01

申请人： LAM RESEARCH CORPORATION

发明人： ANNAPRAGADA, Rao ,  TAKESHITA, Kenji

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76831 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

摘要： A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.

公开(公告)号：EP1615265A1

公开(公告)日：2006-01-11

申请号：EP05008549.7

申请日：2005-04-19

申请人： FUJITSU LIMITED

发明人： Hashimi, Kazuo, Fujitsu Limited ,  Sato, Hidekazu, Fujitsu Limited

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L29/66636 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76814

摘要： A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.

摘要翻译： 一种半导体器件制造方法包括以下步骤：（a）在半导体衬底上形成电介质膜; （b）通过干法蚀刻介电膜; 和（c）在预定的温度条件下将热分解的原子氢供应到半导体衬底上，以去除由于干法而在半导体衬底中产生的损伤层。

公开(公告)号：EP1608010A2

公开(公告)日：2005-12-21

申请号：EP05016009.2

申请日：1996-05-28

申请人： SONY CORPORATION

发明人： Nagayama, Tetsuji ,  Minami, Masaki

IPC分类号： H01L21/60 ,  H01L21/68

CPC分类号： H01L21/76897 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/823425 ,  H01L2924/3011 ,  Y10T428/31909

摘要： A method of forming a connection hole, which includes the steps of: laminating an etching stopper film made of a SiN based material and an interlayer insulating film made of a SiOx based material on a substrate in this order; forming an organic film pattern on the interlayer insulating film on the basis of a connection hole pattern; dry-etching the interlayer insulating film using the organic film pattern as a mask while keeping a selection ratio to the etching stopper film; a fourth step of removing a carbon based protective film which is deposited on an exposed surface of the etching stopper film by the dry etching, using an etching reactive system including an oxygen based chemical species; and a fifth step of completing a connection hole by selectively etching the etching stopper film.

摘要翻译： 一种形成连接孔的方法，包括以下步骤：将由SiN基材料制成的蚀刻阻挡膜和由SiOx基材料制成的层间绝缘膜依次层压在基板上; 基于连接孔图案在层间绝缘膜上形成有机膜图案; 使用有机膜图案作为掩模来干蚀刻层间绝缘膜，同时保持与蚀刻停止膜的选择比; 通过使用包含氧基化学物质的蚀刻反应系统，通过干蚀刻除去沉积在蚀刻阻挡膜的暴露表面上的碳基保护膜的第四步骤; 以及通过选择性地蚀刻蚀刻停止膜来完成连接孔的第五步骤。

公开(公告)号：EP1592053A1

公开(公告)日：2005-11-02

申请号：EP04706799.6

申请日：2004-01-30

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： YAMAZAKI, Shunpei ,  KUWABARA, Hideaki

IPC分类号： H01L21/3213 ,  H01L21/285 ,  H01L21/28 ,  H01L21/336 ,  H01L21/3065 ,  B05D3/04 ,  H05K3/14 ,  G09F9/30

CPC分类号： H01L21/32139 ,  C23C16/45589 ,  C23C16/509 ,  C23C16/54 ,  H01J2237/3342 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3246 ,  H01L51/0017 ,  H01L51/0022 ,  H01L51/5206 ,  H01L51/56

摘要： In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.

公开(公告)号：EP1569273A2

公开(公告)日：2005-08-31

申请号：EP05104911.2

申请日：2004-07-29

申请人： ST MICROELECTRONICS S.A.

发明人： Schoellkopf, Jean-Pierre ,  Cerutti, Robin ,  Coronel, Philippe ,  Skotnicki, Thomas

IPC分类号： H01L21/765 ,  H01L21/762 ,  H01L23/485 ,  H01L23/528

CPC分类号： H01L21/743 ,  H01L21/76224 ,  H01L21/765 ,  H01L21/76802 ,  H01L21/76838 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/5286 ,  H01L23/535 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： L'invention concerne un circuit intégré comprenant un substrat semiconducteur dans lequel des zones actives entourent ou sont entourées par des évidements remplis d'isolant, et dans lequel une région conductrice est noyée dans l'isolant d'au moins un évidement, la région conductrice étant connectée à une tension de référence et étant connectée à au moins un élément voisin du circuit.

摘要翻译： 集成电路包括半导体衬底，其中有源区围绕或被填充有绝缘体的空腔包围。 导电区域在至少一个空腔的绝缘中沉没，导电区域连接到参考电压并连接到电路的至少一个相邻元件。

公开(公告)号：EP1536291A1

公开(公告)日：2005-06-01

申请号：EP03792757.1

申请日：2003-08-21

申请人： Daikin Industries, Ltd.

发明人： ITANO, Mitsushi, c/o Yodogawa Seisakusho ,  KANEMURA, Takashi, c/o Yodogawa Seisakusho ,  NAKAMURA, Shingo, c/o Yodogawa Seisakusho ,  KAMIYA, Fumihiro, c/o Yodogawa Seisakusho ,  KEZUKA, Takehiko, c/o Yodogawa Seisakusho

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/304 ,  H05K3/26

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/24 ,  C11D7/263 ,  C11D7/264 ,  C11D7/265 ,  C11D7/28 ,  C11D7/32 ,  C11D7/3263 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/42 ,  G03F7/422 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  G03F7/428 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76838 ,  H05K3/26

摘要： The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.

摘要翻译： 本发明提供了一种用于低k膜的抗蚀剂去除溶液和用于通孔或电容器的清洁溶液，所述溶液包含氟化氢（HF）和选自有机酸和有机溶剂中的至少一种。 本发明还提供了通过使用溶液去除抗蚀剂的方法和清洁通孔或电容器的方法。

公开(公告)号：EP1521302A1

公开(公告)日：2005-04-06

申请号：EP04447219.9

申请日：2004-09-30

申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)

发明人： Beyer Gerald ,  Gueneau de Mussy, Jean-Paul ,  Maex Karen ,  Sutcliffe Victor

IPC分类号： H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/764 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a method for the production of airgaps in a semiconductor device.
The formation of airgaps is based on chemically and/or mechanically changing the properties of sidewalls of a hole in a first dielectric layer locally, such that the sidewalls of the hole in said first dielectric layer are converted and become etchable by a first etching substance.

摘要翻译： 本发明涉及一种在半导体器件中制造气隙的方法。 空气隙的形成基于在局部地化学和/或机械地改变第一介电层中的孔的侧壁的性质，使得所述第一介电层中的孔的侧壁被转换并可被一个 第一蚀刻物质。

公开(公告)号：EP1180794A3

公开(公告)日：2004-08-25

申请号：EP01117515.5

申请日：2001-07-20

申请人： Infineon Technologies AG

发明人： Schneegans, Manfred, Dr. ,  Wege, Stephan

IPC分类号： H01L21/768 ,  H01L21/00

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76814

摘要： Zur Herstellung von Metall/Metall-Kontakten im Rahmen einer Mehrlagenmetallisierung in einer integrierten Schaltung auf einer Halbleiterscheibe wird nach dem Aufbringen einer Isolationsschicht auf einer Metallebene ein Lithographieschritt mit einer Fotolackmaske zur Definition von Kontaktlöchern auf der Isolationsschicht und anschließend ein anisotropes Ätzen der Isolationsschicht zur Erzeugung der Kontaktlöcher ausgeführt. Dann wird in einem Vakuum nacheinander eine chemische Trockenätzung zur Beseitigung der Fotolackmaske und ein chemisch-physikalisches Trockenätzen zum Beseitigen vom beim chemischen Trockenätzen sich anlagernder organischer Verunreinigungen in einem Vakuum durchgeführt, um anschließend eine Metallabscheidung zur Kontaktlochauffüllung vorzunehmen.

公开(公告)号：EP0779654B1

公开(公告)日：2004-03-24

申请号：EP96119527.8

申请日：1996-12-05

申请人： MOTOROLA, INC.

发明人： Hall, Mark D. ,  Ferguson, Gregory Steven ,  Mitchell, Joel Patrick ,  Suryanata, Johanes P.D.

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/60

CPC分类号： H01L24/05 ,  H01L21/76802 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/00014