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308 条记录 (耗时 0.018 秒)

    TFT ARRAY SUBSTRATE, FABRICATION METHOD THEREOF, AND LIQUID CRYSTAL DISPLAY DEVICE
    31.
    发明公开
    TFT ARRAY SUBSTRATE, FABRICATION METHOD THEREOF, AND LIQUID CRYSTAL DISPLAY DEVICE 有权
    SUBSTRATFÜRTFT-ARRAY，HERSTELLUNGSVERFAHRENDAFÜRUNDFLÜSSIGKRISTALLANZEIGEVORRICHTUNG

    公开(公告)号：EP2757412A1

    公开(公告)日：2014-07-23

    申请号：EP13839916.7

    申请日：2013-05-09

    申请人： Xiamen Tianma Micro-Electronics Co., Ltd.

    发明人： ZHOU, Xiufeng ,  LI, Junyi

    IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/77

    CPC分类号： H01L27/124 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2201/40 ,  H01L27/1248 ,  H01L27/1296

    摘要： The present invention relates to the field of liquid crystal display and discloses a TFT array substrate and a manufacturing method thereof and a liquid crystal display device, which is aiming at lowering the resistance value of a common electrode and not deminishing the aperture ratio of pixels on the premise that the manufacturing cost is not additionally increased. The TFT array substrate includes: a substrate, a common electrode layer arranged on the substrate, a first insulating layer arranged on the common electrode layer and a plurality of pixel electrodes arranged in an array on the first insulating layer, wherein via holes penetrating through the first insulating layer are formed between adjacent pixels in some of a plurality of pixels, and common electrode lines are grown between rows and/or columns of pixels in some of the plurality of pixels, and in parallel with the common electrode layer below the first insulating layer through the via holes.

    摘要翻译： 液晶显示器领域本发明涉及液晶显示领域，并公开了一种TFT阵列基板及其制造方法和液晶显示装置，其目的在于降低公共电极的电阻值，而不排除像素的开口率 制造成本不增加的前提。 TFT阵列基板包括：基板，布置在基板上的公共电极层，布置在公共电极层上的第一绝缘层和在第一绝缘层上排列成阵列的多个像素电极，其中贯穿 第一绝缘层形成在多个像素中的一些像素中的相邻像素之间，并且公共电极线在多个像素中的一些像素中的像素之间的行和/或列之间生长，并且与第一绝缘体下方的公共电极层并联 层穿过通孔。

    ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND ACTIVE MATRIX SUBSRATE MANUFACTURING METHOD
    32.
    发明公开
    ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND ACTIVE MATRIX SUBSRATE MANUFACTURING METHOD 审中-公开
    有源矩阵衬底，显示装置和有源矩阵衬底制造方法

    公开(公告)号：EP2693420A1

    公开(公告)日：2014-02-05

    申请号：EP12762819.6

    申请日：2012-03-22

    申请人： Sharp Kabushiki Kaisha

    发明人： MISAKI, Katsunori

    IPC分类号： G09F9/30 ,  G02F1/1368 ,  G09F9/00 ,  H01L29/786

    CPC分类号： H01L27/1248 ,  G02F1/13458 ,  G02F1/136213 ,  G02F2001/133337 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/501 ,  H01L27/1225 ,  H01L27/1296 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/78606

    摘要： An active matrix substrate ( 1 ) includes a source electrode ( 32 ), a drain electrode ( 33 ), and a semiconductor layer ( 31 ) of oxide semiconductor. A gate insulating layer ( 42 ) of silicon oxide is formed on the gate electrode ( 12a ); a source electrode ( 32 ), a drain electrode ( 33 ), and a semiconductor layer ( 31 ) are formed on the gate insulating layer ( 42 ); a first protection layer ( 44 ) of silicon nitride is formed on the gate insulating layer ( 42 ) without covering the semiconductor layer ( 31 ); and a second protection layer ( 46 ) of silicon oxide is formed on the semiconductor layer ( 31 ). The first protection layer ( 44 ) covers the signal line ( 14 ) and the source connection line ( 36 ).

    摘要翻译： 有源矩阵基板（1）包括源电极（32），漏电极（33）和氧化物半导体的半导体层（31）。 在栅电极（12a）上形成氧化硅的栅极绝缘层（42）; 源极（32），漏极（33）和半导体层（31）形成在栅极绝缘层（42）上。 氮化硅的第一保护层（44）形成在栅极绝缘层（42）上而不覆盖半导体层（31）; 并且在半导体层（31）上形成氧化硅的第二保护层（46）。 第一保护层（44）覆盖信号线（14）和源极连接线（36）。

    DISPLAY DEVICE
    33.
    发明公开
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：EP2690492A1

    公开(公告)日：2014-01-29

    申请号：EP12763589.4

    申请日：2012-03-16

    申请人： Sharp Kabushiki Kaisha

    发明人： MORIGUCHI, Masao ,  KANZAKI, Yohsuke ,  TAKANISHI, Yudai ,  KUSUMI, Takatsugu

    IPC分类号： G02F1/1368 ,  G02F1/1333 ,  G09F9/30

    CPC分类号： G02F1/133345 ,  G02F1/1339 ,  G02F1/1345 ,  G02F1/136277 ,  G02F1/1368 ,  G02F2001/133311 ,  G02F2001/133357 ,  G02F2001/134372 ,  G02F2201/501 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/78636

    摘要： A TFT 1 is formed on a glass substrate 11, and a flattening resin film 17 covering the TFT 1 is formed. Furthermore, a moisture-proof protective film 18 covering the entire surface of the flattening resin film 17 is formed. For the protective film 18, a SiO 2 film, a SiN film, a SiON film, or a stacked film thereof is used. The edge surfaces of the flattening resin film 17 are disposed on the inner side of or under a seal 4, and are formed in a tapered shape. By this, the entry of moisture into the flattening resin film 17 is prevented, preventing display degradation. This effect becomes noticeable in a display device including an oxide semiconductor TFT.

    摘要翻译： 在玻璃基板11上形成TFT1，形成覆盖TFT1的平坦化树脂膜17。 此外，形成覆盖平坦化树脂膜17的整个表面的防潮保护膜18。 对于保护膜18，使用SiO 2膜，SiN膜，SiON膜或其叠层膜。 平化树脂膜17的边缘表面设置在密封件4的内侧或下侧，并形成为锥形。 由此防止水分进入平化树脂膜17，防止显示劣化。 该效果在包括氧化物半导体TFT的显示装置中变得显着。

    Liquid crystal display device
    34.
    发明授权
    Liquid crystal display device 有权

    公开(公告)号：EP2192437B1

    公开(公告)日：2013-11-06

    申请号：EP09177227.7

    申请日：2009-11-26

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Ishitani, Tetsuji ,  Kubota, Daisuke

    IPC分类号： G02F1/1335

    CPC分类号： H01L29/7869 ,  G02F1/133514 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/136222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78618

    摘要： To provide a liquid crystal display device suitable for a thin film transistor which uses an oxide semiconductor. In a liquid crystal display device which includes a thin film transistor (220) including an oxide semiconductor layer (223), a film (209) having a function of attenuating the intensity of transmitting visible light is used as an interlayer film which covers at least the oxide semiconductor layer (223). As the film (209) having a function of attenuating the intensity of transmitting visible light, a coloring layer can be used and a light-transmitting chromatic color resin layer is preferably used. An interlayer film which includes a light-transmitting chromatic color resin layer and a light-blocking layer may be formed in order that the light-blocking layer is used as a film having a function of attenuating the intensity of transmitting visible light.

    CONTROL SUBSTRATE AND CONTROL SUBSTRATE MANUFACTURING METHOD
    38.
    发明公开
    CONTROL SUBSTRATE AND CONTROL SUBSTRATE MANUFACTURING METHOD 审中-公开
    STEUERSUBSTRAT UND STEUERSUBSTRAT-HERSTELLUNGSVERFAHREN

    公开(公告)号：EP2224490A1

    公开(公告)日：2010-09-01

    申请号：EP08855870.5

    申请日：2008-12-05

    申请人： Sumitomo Chemical Company, Limited

    发明人： NISHIOKA, Yukiya ,  MATSUMURO, Tomonori ,  KASAHARA, Kenji

    IPC分类号： H01L29/786 ,  G02F1/1368 ,  H01L51/50

    CPC分类号： H01L29/458 ,  H01L27/1248 ,  H01L27/1292 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78603

    摘要： A control substrate comprising:
    a substrate main body;
    a base layer provided on one surface perpendicular to a thickness direction of the substrate main body; and
    a switching element provided on the base layer's surface located on the opposite side to the substrate main body ,so as to perform switching between an electric connection and an electric disconnection,
    wherein the switching element comprises an electrode formed on the surface of the base layer by an application method,the surface being opposite to the substrate main body , and
    the base layer is formed of a member whose adhesiveness to the electrode is higher than the adhesiveness of the substrate main body to an electrode when forming the electrode on a base layer side surface of the substrate main body by an application method.

    摘要翻译： 一种控制基板，包括：基板主体; 基底层，设置在与所述基板主体的厚度方向垂直的一个面上; 以及开关元件，其设置在与所述基板主体相反的一侧的所述基底层的表面上，以进行电连接和断电之间的切换，其中所述开关元件包括形成在所述基底层的表面上的电极 通过施加方法，与衬底主体相对的表面，并且基底层由在基底层上形成电极时与电极的粘附性高于衬底主体与电极的粘附性的部件形成 通过施加方法在基板主体的侧面。