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    Method for manufacturing semiconductor devices
    31.
    发明公开
    Method for manufacturing semiconductor devices 失效
    半导体器件的制造工艺。

    公开(公告)号：EP0231115A2

    公开(公告)日：1987-08-05

    申请号：EP87300644.9

    申请日：1987-01-26

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Seizo, Kakimoto ,  Jun, Kudo ,  Masayoshi, Koba

    IPC分类号： H01L21/20 ,  H01L21/263 ,  H01L21/268

    CPC分类号： H01L21/02667 ,  H01L21/02598 ,  H01L21/2022 ,  H01L21/2636 ,  H01L21/268 ,  Y10S117/904

    摘要： Disclosed is a method of manufacturing semiconductor devices, in which a monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or poly- . crystalline thin film by annealing with energy beams, comprising the steps of: forming a compound film of a belt-shaped high melting point metal having a width narrower than the diameter of said energy beams and polycrystalline silicon, on said amorphous or polycrystalline thin film; causing said amorphous or polycrystalline thin film to contact with a monocrystalline substrate beneath the center line of said belt-shaped compound film at a position of more than 50 to 200 µm remote from the end of the belt-shaped compound film in the scanning direction of said energy beams, with the contact shape being a tiny spot narrower than the width of the belt-shaped compound film; radiating said energy beams, penetrating through said belt-shaped compound film to scan parallel to the belt, starting from the vicinity of the end of the belt-shaped compound film, and inducing crystal growth of the amorphous or polycrystalline thin film beneath the belt-shaped compound film, starting from the monocrystals inheriting the crystalline configuration of the monocrystalline substrate developed by epitaxial growth from the monocrystalline substrate in the amorphous or polycrystalline thin film contacting with the monocrystalline substrate near the end of the belt-shaped compound film.
    It is more preferable to compose so that the upper surface of the amorphous or polycrystalline thin film contacting with the monocrystalline substrate may be flush with the upper surface of the armophous or polycrystalline thin film not contacting with the monocrystalline substrate near this contacting portion.

    Improved (RIE) plasma etch process for making metal-semiconductor ohmic type contacts
    32.
    发明公开
    Improved (RIE) plasma etch process for making metal-semiconductor ohmic type contacts 失效
    Plasmaätzverfahrenzur Herstellung von Metall-Halbleiter-Kontakte des ohmischen Typs。

    公开(公告)号：EP0219465A2

    公开(公告)日：1987-04-22

    申请号：EP86830254.8

    申请日：1986-09-15

    申请人： SGS-THOMSON MICROELECTRONICS S.r.l.

    发明人： Gualandris, Fabio

    IPC分类号： H01L21/263

    CPC分类号： H01L21/31116 ,  H01L21/76802 ,  H01L21/76804

    摘要： It is described an improved process of RIE plasma attack of the layer of dielectric material on the surface of wafers of semiconductor material, in correspondence of areas purposely defined by masking, for exposing the underlying semiconductor crystal, in preparation to depositing a layer of material of metallic conduction. After having provided to remove a certain thickness of dielectric according to the known technique, the conditions of attack are modified, substituting the plasma gases and reducing the "bias" and attack is resumed of the residual layer of dielectric and preferably also of a certain thickness of the semiconductor crystal in the same reactor. Ohmic contacts with relatively low contact resistance and great reliability are obtained with a minimum handling of the wafers.

    摘要翻译： 描述了对半导体材料的晶片表面上介电材料层的RIE等离子体侵蚀的改进处理，对应于通过掩蔽有目的地限定的区域，用于暴露下面的半导体晶体，以准备沉积金属材料层 传导。 在根据已知技术提供去除一定厚度的电介质之后，改变了攻击条件，用等离子体气体替代并减少了“偏压”，并且恢复了介电层的残留层，并且优选地还具有一定的厚度 的半导体晶体。 通过对晶片的最小处理，获得具有相对低的接触电阻和高可靠性的欧姆接触。

    A system for continuously exposing desired patterns and their backgrounds on a target surface
    34.
    发明公开
    A system for continuously exposing desired patterns and their backgrounds on a target surface 失效
    系统，用于在目标表面上连续地曝光所希望图案和它们的背景。

    公开(公告)号：EP0182360A1

    公开(公告)日：1986-05-28

    申请号：EP85114709.0

    申请日：1985-11-19

    申请人： Toshiba Machine Company Limited

    发明人： Kasahara, Izumi ,  Kawaughi, Yasunobu ,  Suzuki, Yoshio

    IPC分类号： H01L21/263 ,  H01J37/30 ,  G03F7/20

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31771

    摘要： In a system for continuously exposing desired patterns and their backgrounds on the surface of a target (20), a first electron beam emitted from a first electron gun (10) is converged by condenser lenses (12, 14, 16) and an objective lens (18) to be focused on the surface of the target (20). A second electron beam emitted from a second electron gun (32) is defocused at the target (20) surface by a condenser lens (34) and a deflecting coil (36). A deflector (22) selects the first or second electron beams. While the target (20) surface is being scanned with the selected electron beam, the beam is deflected by a scanning deflector (30). In delineating a pattern, the target (20) surface is scanned with the first electron beam. In delineating a background, on the other hand, the target (20) surface is scanned with the second electron beam.

    Method of manufacturing semiconductor devices
    36.
    发明公开
    Method of manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号：EP0167391A2

    公开(公告)日：1986-01-08

    申请号：EP85304719.9

    申请日：1985-07-02

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Kakimoto, Seizo ,  Kudo, Jun ,  Koba, Masayoshi

    IPC分类号： H01L21/263 ,  H01L21/20

    CPC分类号： H01L21/02691 ,  H01L21/02598 ,  H01L21/2022 ,  H01L21/2636 ,  Y10S117/905 ,  Y10S148/093

    摘要： The preferred embodiment discloses a new method of manufacturing semiconductor devices, in which monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film (6) via annealing means by radiation of energy beams (9), wherein the manufacturing method comprises: the formation of a belt-shaped high melting point metal film (8) having a width narrower than the diameter of the energy beams on either amorphous or polycrystalline thin film; beam scanning in parallel with the said belt by means of radiating energy beams onto the said belt-shaped high melting point metal film; and generation of a nucleus in a limited area beneath the belt-shaped thin film at the moment the film-covered amorphous or polycrystalline area dissolves and recrystallizes so that the said recrystallized area can eventually grow into a moncrystalline configuration.

    摘要翻译： 该优选实施例公开了一种制造半导体器件的新方法，其中通过退火装置通过辐射能量束（9）溶解和再结晶非晶或多晶薄膜（6）来形成单晶薄膜，其中该制造方法包括： 形成宽度比无定形或多晶薄膜上的能量束的直径窄的带状高熔点金属膜（8）; 通过将能量束辐射到所述带状高熔点金属膜上来平行于所述带进行电子束扫描; 以及在薄膜覆盖的无定形或多晶区域溶解和再结晶的时刻在带状薄膜下方的有限区域内产生核，使得所述再结晶区域最终可以生长成单晶结构。