公开(公告)号：EP4380056A3

公开(公告)日：2024-08-07

申请号：EP24170557.3

申请日：2020-06-05

申请人： Wolfspeed, Inc.

发明人： RICHMOND, James ,  VAN BRUNT, Edward Robert ,  STEINMANN, Philipp

IPC分类号： H03K17/082 ,  H03K17/74

CPC分类号： H03K17/0828 ,  H03K17/0822 ,  H03K17/74

摘要： A transistor semiconductor die includes a first current terminal, a second current terminal, and a control terminal. A semiconductor structure is between the first current terminal, the second current terminal, and the control terminal and configured such that a resistance between the first current terminal and the second current terminal is based on a control signal provided at the control terminal. Short circuit protection circuitry is coupled between the control terminal and the second current terminal. In a normal mode of operation, the short circuit protection circuitry is configured to provide a voltage drop that is greater than a voltage of the control signal. In a short circuit protection mode of operation, the short circuit protection circuitry is configured to provide a voltage drop that is less than a voltage of the control signal.

公开(公告)号：EP4402724A1

公开(公告)日：2024-07-24

申请号：EP22748665.1

申请日：2022-07-11

申请人： Wolfspeed, Inc.

发明人： JONES, Evan ,  SRIRAM, Saptha ,  BOTHE, Kyle

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L21/338 ,  H01L29/812 ,  H01L29/78 ,  H01L29/20 ,  H01L29/40 ,  H01L29/417

CPC分类号： H01L29/2003 ,  H01L29/7786 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/0623 ,  H01L29/1075 ,  H01L29/1083 ,  H01L29/66462 ,  H01L29/812 ,  H01L29/78

公开(公告)号：EP4393014A1

公开(公告)日：2024-07-03

申请号：EP22769509.5

申请日：2022-08-03

申请人： Wolfspeed, Inc.

发明人： MCPHERSON, Brice ,  SAMPLES, Benjamin A. ,  PASSMORE, Brandon

IPC分类号： H01L25/07 ,  H01L23/053

CPC分类号： H01L25/072 ,  H01L23/053 ,  H01L25/18

公开(公告)号：EP4352787A1

公开(公告)日：2024-04-17

申请号：EP22820776.7

申请日：2022-05-31

申请人： Wolfspeed, Inc.

发明人： WOO, Eng Wah ,  CHEANG, Samantha ,  KAM, Kok Meng ,  MARBELL, Marvin ,  JANG, Haedong ,  KOMPOSCH, Alexander

IPC分类号： H01L23/66 ,  H01L23/538 ,  H01L21/58

CPC分类号： H01L23/544 ,  H01L2223/5442620130101 ,  H01L2223/5448620130101 ,  H01L2223/544220130101 ,  H01L23/3121 ,  H01L23/057 ,  H01L2224/4917520130101 ,  H01L2924/1910720130101 ,  H01L2224/7326520130101 ,  H01L2924/0001420130101 ,  H01L2224/4809120130101 ,  H01L24/73 ,  H01L24/48 ,  H01L24/32 ,  H01L2224/3224520130101 ,  H01L2224/4819520130101 ,  H01L2924/1901120130101 ,  H01L2224/4824720130101 ,  H01L2924/1910520130101 ,  H01L24/49 ,  H01L23/66 ,  H01L2223/664420130101 ,  H01L23/13 ,  H01L2223/666120130101 ,  H01L23/36 ,  H01L23/50

公开(公告)号：EP4342000A1

公开(公告)日：2024-03-27

申请号：EP22805206.4

申请日：2022-05-12

申请人： Wolfspeed, Inc.

发明人： HALLIN, Christer ,  SRIRAM, Saptharishi ,  GUO, Jia

IPC分类号： H01L29/778

公开(公告)号：EP4341989A1

公开(公告)日：2024-03-27

申请号：EP22805124.9

申请日：2022-03-02

申请人： Wolfspeed, Inc.

发明人： SMITH, JR., Thomas J. ,  SRIRAM, Saptharishi

IPC分类号： H01L21/82 ,  H01L27/02 ,  H01L27/085

公开(公告)号：EP4309204A2

公开(公告)日：2024-01-24

申请号：EP22715798.9

申请日：2022-02-25

申请人： Wolfspeed, Inc.

发明人： KIM, Joohyung ,  HAN, Kijeong ,  HARRINGTON, III, Thomas, E. ,  VAN BRUNT, Edward, Robert ,  RYU, Sei-Hyung

IPC分类号： H01L21/76 ,  H01L21/761 ,  H01L27/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

公开(公告)号：EP4289002A1

公开(公告)日：2023-12-13

申请号：EP22704669.5

申请日：2022-01-28

申请人： Wolfspeed, Inc.

发明人： WATTS, Michael E. ,  KREHBIEL, James ,  BOKATIUS, Mario

IPC分类号： H01L23/66 ,  H03F1/02

公开(公告)号：EP4254506A2

公开(公告)日：2023-10-04

申请号：EP23170936.1

申请日：2014-02-21

申请人： Wolfspeed, Inc.

发明人： HALLIN, Christer ,  SRIRAM, Saptharishi

IPC分类号： H01L29/36

摘要： A semi-insulating Group III nitride buffer layer for a semiconductor device (30) having a top surface and a bottom surface comprises: a first doped portion (34) adjacent the bottom surface that is doped with iron; and a second doped portion (36) adjacent the top surface and on the first doped portion, the second doped portion doped with carbon. An iron doping concentration in the first doped portion exceeds a carbon doping concentration of the first doped portion. A carbon doping concentration exceeds an iron doping concentration in only a top part of the second doped portion. The second doped portion has a graded doping concentration in which the iron doping concentration decreases with increasing distance from the first doped portion and the carbon doping concentration increases with increasing distance from the first doped portion.

公开(公告)号：EP4250356A2

公开(公告)日：2023-09-27

申请号：EP23186522.1

申请日：2021-03-31

申请人： Wolfspeed, Inc.

发明人： NOORI, Basim ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  LIM, Kwangmo Chris ,  KOMPOSCH, Alexander ,  MU, Qianli ,  DEVITA, Michael

IPC分类号： H01L23/495

摘要： A transistor amplifier includes a semiconductor layer structure comprising first and second major surfaces and a plurality of unit cell transistors on the first major surface that are electrically connected in parallel, each unit cell transistor comprising a gate finger coupled to a gate manifold, a drain finger coupled to a drain manifold, and a source finger. The semiconductor layer structure is free of a via to the source fingers on the second major surface.