利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

116 条记录 (耗时 0.017 秒)

    LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL
    3.
    发明公开
    LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL 审中-公开

    公开(公告)号：EP4389343A2

    公开(公告)日：2024-06-26

    申请号：EP24171415.3

    申请日：2019-12-27

    申请人： Wolfspeed, Inc.

    发明人： DONOFRIO, Matthew ,  EDMOND, John ,  GOLAKIA, Harshad

    IPC分类号： B23K101/40

    CPC分类号： B23K2103/5620180801 ,  B23K26/53 ,  B28D5/00 ,  H01L21/02005 ,  B23K26/0626 ,  B23K2101/4020180801

    摘要： A method for processing a crystalline material by supplying laser emissions focused to an initial depth within an interior of a crystalline material substrate (164), and effecting relative lateral movement between a laser and the substrate (164), to form subsurface laser damage having an initial first subsurface laser damage pattern (165') substantially centered at the initial depth within the interior. The method also including supplying laser emissions focused to a subsequent within the interior of the crystalline material, and effecting relative lateral movement between the laser and the substrate (164), to form subsurface laser damage (165") having a subsequent laser damage pattern substantially centered at the subsequent depth within the interior. The subsequent depth differs from the initial depth, the subsequent subsurface laser damage pattern is substantially registered with the initial subsurface laser damage pattern, and a vertical extent of at least a portion of the subsurface laser damage (165') of the initial subsurface laser damage pattern overlaps with a vertical extent of at least a portion of the subsurface laser damage (165") of the subsequent subsurface laser damage pattern.

    FIELD EFFECT TRANSISTOR WITH INTEGRATED SERIES CAPACITANCE
    7.
    发明公开
    FIELD EFFECT TRANSISTOR WITH INTEGRATED SERIES CAPACITANCE 审中-公开

    公开(公告)号：EP4343831A1

    公开(公告)日：2024-03-27

    申请号：EP22306413.0

    申请日：2022-09-25

    申请人： Wolfspeed, Inc.

    发明人： FISHER, Jeremy ,  BOUISSE, Gerard

    IPC分类号： H01L23/482 ,  H01L23/66 ,  H01L23/522

    摘要： A radio frequency (RF) transistor die includes a semiconductor structure having an active region including a plurality of transistors having respective gate, drain, or source fingers, and manifold on the semiconductor structure that electrically couples a plurality of the respective gate, drain, or source fingers. At least one capacitor is on the manifold and/or is on at least one of the respective gate, drain, or source fingers. The manifold may be a first metal layer on the semiconductor structure that provides a lower plate of the at least one capacitor, and a second metal layer on the semiconductor structure may provide an upper plate of the at least one capacitor. Related devices and fabrication methods are also discussed.

    METHOD FOR PROCESSING SILICON CARBIDE WAFERS WITH RELAXED POSITIVE BOW
    8.
    发明公开
    METHOD FOR PROCESSING SILICON CARBIDE WAFERS WITH RELAXED POSITIVE BOW 审中-公开

    公开(公告)号：EP4342648A1

    公开(公告)日：2024-03-27

    申请号：EP23207947.5

    申请日：2020-03-13

    申请人： Wolfspeed, Inc.

    发明人： BUBEL, Simon ,  DONOFRIO, Matthew ,  EDMOND, John ,  CURRIER, Ian

    IPC分类号： B28D5/00 ,  B28D5/04 ,  B23K26/38 ,  B23K26/53

    摘要： Silicon carbide (SiC) wafers (8A) and related methods are disclosed that include intentional or imposed wafer (8A) shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers (8A) due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer (8A) shapes may comprise SiC wafers (8A) with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers (8A), and in particular for large area SiC wafers (8A), may be reduced. Related methods for providing SiC wafers (8A) with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material (70, 90, 92A, 92). Such methods may include laser-assisted separation of SiC (6H) wafers (8A) from bulk crystalline material (70, 90, 92A, 92).