公开(公告)号：EP1758152A2

公开(公告)日：2007-02-28

申请号：EP06017632.8

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  JSR Corporation

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

IPC分类号： H01L21/02 ,  H01G4/12

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置（100）中的气氛通过气体供给源（112）等调节为例如氧气氛。 将热处理装置（101）的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟皿161以晶片W中没有产生缺陷的速度被装载到热处理装置（101）中。此后，热处理装置（101）的反应管的内部温度 升温至烘烤温度，进行烘烤预定时间。 将晶片W在热处理装置（101）中冷却至规定温度，然后在处理装置（100）中冷却至室温，并从处理装置（100）进行。 在电介质前体层被烘烤之前，将其保持在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残余溶剂的温度的温度下的预定时间。

公开(公告)号：EP1058274B1

公开(公告)日：2005-07-27

申请号：EP00111678.9

申请日：2000-05-31

申请人： JSR Corporation

发明人： Nishikawa, Michinori ,  Yamada, Kinji ,  Kakuta, Mayumi ,  Inoue, Yasutake ,  Ebisawa, Masahiko ,  Hakamatsuka, Satoko ,  Tamaki, Kentarou

IPC分类号： H01B3/46 ,  H01L21/312

CPC分类号： H01B3/46

公开(公告)号：EP1267395A3

公开(公告)日：2005-06-08

申请号：EP02012824.5

申请日：2002-06-10

申请人： JSR Corporation

发明人： Hayashi, Eiji ,  Shiota, Atsushi ,  Nishikawa, Michinori ,  Yamada, Kinji

IPC分类号： H01L21/312 ,  H01L21/316

CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/3122 ,  H01L21/31695 ,  Y02P20/544 ,  Y10T428/31663

摘要： A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500°C and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.

公开(公告)号：EP1298176A2

公开(公告)日：2003-04-02

申请号：EP02021449.0

申请日：2002-09-25

申请人： JSR Corporation

发明人： Nishikawa, Michinori ,  Sekiguchi, Manabu ,  Patz, Matthias ,  Shiota, Atsushi ,  Yamada, Kinji

IPC分类号： C09D183/04 ,  H01L21/312

CPC分类号： H01L21/02126 ,  C08G65/4068 ,  C09D183/14 ,  H01L21/312 ,  Y10T428/31533 ,  Y10T428/31663 ,  Y10T428/31667

摘要： A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60 % by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

摘要翻译： 公开了一种用于半导体的叠层膜，其具有优异的粘合性，其通过例如半导体器件中的CVD工艺形成的涂膜，具有堆叠膜的绝缘膜和使用该绝缘膜的半导体基板。 层叠膜包含（A）碳含量为60重量％以上的有机化合物的膜，（B）通过加热通过水解缩合得到的水解缩合物而得到的膜，所述水解缩合物是通过水解缩合得到的， 由上述通式（51）至（54）表示的具体化合物组成。

公开(公告)号：EP1296365A2

公开(公告)日：2003-03-26

申请号：EP02021167.8

申请日：2002-09-24

申请人： JSR Corporation

发明人： Nishikawa, Michinori ,  Sekiguchi, Manabu ,  Patz, Matthias ,  Yoshioka, Mutsuhiko ,  Shiota, Atsushi ,  Yamada, Kinji

IPC分类号： H01L21/312

CPC分类号： H01L21/3122 ,  C23C18/04 ,  C23C18/1212 ,  C23C18/122 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02348 ,  Y10T428/25 ,  Y10T428/259

摘要： An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising:

(A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and
(B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.

摘要翻译： 提供了一种半导体用绝缘膜，其与通过CVD形成的膜具有优异的粘合性，并且可用作半导体器件等中的电介质膜。 绝缘膜是通过以下方法得到的：（A）使基材经受（A-1）至少一种选自紫外线照射处理，氧等离子体处理， 氮等离子体处理，氦等离子体处理，氩等离子体处理，氢等离子体处理和氨等离子体处理，（A-2）使用具有反应性基团的烷氧基硅烷化合物和水解和 冷凝; 和（B）应用如上所述的包含有机溶剂和选自由通式（1）至（4）表示的化合物组成的组中的至少一种化合物中的任一种或两者的成膜用组合物的步骤， 以及通过水解和冷凝至少一种化合物而获得的水解/缩合产物，并加热所得到的涂层。

公开(公告)号：EP1295924A2

公开(公告)日：2003-03-26

申请号：EP02021165.2

申请日：2002-09-24

申请人： JSR Corporation

发明人： Nishikawa, Michinori ,  Sekiguchi, Manabu ,  Shiota, Atsushi ,  Yamada, Kinji

IPC分类号： C09D183/04

CPC分类号： B05D1/60 ,  B05D7/52 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/24942 ,  Y10T428/31663

摘要： A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.

摘要翻译： 一种堆叠电影，用于生产的方法，该叠层膜在绝缘膜，其包括堆叠的电影，和用于半导体基板一个，利用绝缘膜 - 。 具有两种或更多种具有回转的平均半径为5nm以上的烷氧基硅烷差水解缩合物，或烷氧基的水解缩合物的膜的叠层膜，包括薄膜的介电常数为0.3或更差。 堆叠的电影是通过将涂布溶液包含：（b）具有小于10nm回转的平均半径的化合物，然后将涂敷液施加，其包含（A）具有10至的回转的平均半径的化合物获得 30纳米，然后加热。 层叠膜 - 提供具有与CVD成膜优异的粘合电介质电影（半导体基板）。

公开(公告)号：EP1267395A2

公开(公告)日：2002-12-18

申请号：EP02012824.5

申请日：2002-06-10

申请人： JSR Corporation

发明人： Hayashi, Eiji ,  Shiota, Atsushi ,  Nishikawa, Michinori ,  Yamada, Kinji

IPC分类号： H01L21/312

CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/3122 ,  H01L21/31695 ,  Y02P20/544 ,  Y10T428/31663

摘要： A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500°C and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.

摘要翻译： 一种用于二氧化硅薄膜，它包括在超临界介质中处理的膜的形成方法中，选自（B-1）相容的化合物所选择的膜，其包含（A）一种硅氧烷化合物和（B）的至少一个成员 用或在成分（A）分散的，并且具有的沸点或150℃至500℃的分解温度和（B-2）表面活性剂。 二氧化硅电影有表示基因反弹2.2或更低的介电常数优异的机械强度，并因此是作为电介质膜，在半导体装置等是有用的。

公开(公告)号：EP0844283B1

公开(公告)日：2002-10-09

申请号：EP97120273.4

申请日：1997-11-20

申请人： JSR Corporation

发明人： Kurosawa, Takahiko ,  Yamada, Kinji ,  Matsubara, Minoru ,  Inoue, Yasutake ,  Shinoda, Tomotaka ,  Gotou, Kouhei

IPC分类号： C08L79/08 ,  C08L83/04 ,  C09D179/08 ,  C09D183/04 ,  H01L21/312

CPC分类号： H01L21/02126 ,  C08G77/455 ,  C08K5/5415 ,  C08L79/08 ,  C09D183/10 ,  H01L21/312 ,  C08L2666/52

摘要： A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.

公开(公告)号：EP1245638A1

公开(公告)日：2002-10-02

申请号：EP02006789.8

申请日：2002-03-25

申请人： JSR Corporation

发明人： Shinohara, Noriyasu ,  Shirato, Kaori ,  Nishikawa, Michinori ,  Okada, Takashi ,  Yamada, Kinji

IPC分类号： C08L65/00 ,  C08L71/12 ,  C09D171/12 ,  C09D165/00 ,  C08G61/02 ,  C08G61/12 ,  H01L21/312

CPC分类号： H01L21/02126 ,  C08G61/02 ,  C08G61/12 ,  C08L65/00 ,  C08L71/123 ,  C09D171/12 ,  H01L21/312 ,  H05K3/4676 ,  C08L83/00

摘要： A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

摘要翻译： 用于形成能够形成低介电常数特性，耐开裂性，弹性模量和对基板的粘附性以及用作半导体器件中的层间绝缘膜材料的涂膜的成膜用组合物等。成膜用组合物包含（ A）选自芳族聚亚芳基和芳族聚（亚芳基醚），（B）聚乙烯基硅氧烷和（C）有机溶剂中的至少一种。

公开(公告)号：EP1160848A2

公开(公告)日：2001-12-05

申请号：EP01112412.0

申请日：2001-05-21

申请人： JSR Corporation

发明人： Nishikawa, Michinori ,  Hasegawa, Kouchi ,  Hayashi, Eiji ,  Yamada, Kinji

IPC分类号： H01L21/316

CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316 ,  Y10T428/31663

摘要： A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition.
The composition for film formation comprises:

(A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and
(B) an organic solvent.

摘要翻译： 一种成膜用组合物，当用于半导体器件等的制造中时，即使在不同条件下固化而获得的介电常数几乎不相等且对基材的附着性优异，也可以制造出 组合物和由该组合物获得的二氧化硅基膜。 用于成膜的组合物包括：（A）通过水解和缩合获得的水解和缩合产物（A-1）至少一种选自由下式（1）表示的化合物的化合物，由 下述式（2）表示的化合物和下述式（3）表示的化合物和（A-2）至少一种下述式（4）所示的化合物在催化剂和水的存在下反应; 和（B）有机溶剂。