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公开(公告)号：EP0280459A1
公开(公告)日：1988-08-31
申请号：EP88301283.3
申请日：1988-02-16
CPC分类号： G02F1/295 , H01S5/06243 , H01S5/4068 , H01S5/4075
摘要： A scanning apparatus with a reflecting function comprising a laser beam oscillating area (11), one or more reflecting area (13) with a waveguide having different refractive indexes, and a means for applying an electric field to the waveguide of the reflecting area, by which the changes in the refractive index of the waveguide of the reflecting area are attained so that laser beams from the laser beam oscillating area undergo refraction while they pass through the waveguide of said reflecting area.
摘要翻译： 一种具有反射功能的扫描装置，包括激光束振荡区域（11），具有不同折射率的波导的一个或多个反射区域（13），以及用于向反射区域的波导管施加电场的装置，通过 实现反射区域的波导的折射率的变化，使得来自激光束振荡区域的激光束在穿过反射区域的波导时经历折射。
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公开(公告)号：EP0270381A2
公开(公告)日：1988-06-08
申请号：EP87310716.3
申请日：1987-12-04
CPC分类号： H01S5/14 , H01S5/4062
摘要： A semiconductor light-emitting apparatus comprising a semiconductor laser array device (l, lʹ) with a plurality of lasing filaments and a mode-mixing device (2, 2ʹ) with a striped optical waveguide (202, 202ʹ) that attains an optical phase-coupling with the semiconductor laser array device (l, lʹ), whereby beams from the semiconductor laser array device (l, lʹ) are emitted from the light-emitting facet (l30, l30ʹ) of the semiconductor light-emitting apparatus via the mode-mixing device (2, 2ʹ), thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.
摘要翻译： 一种半导体发光装置，包括具有多个激光灯丝的半导体激光器阵列器件（1,1'）和具有条纹光波导（202,202'）的模式混合器件（2,2'），其形成为 与半导体激光器阵列器件（1,1'）进行光学相位耦合，从半导体激光器阵列器件（1,1'）的发光小面（130,303）发射来自半导体激光器阵列器件（1,1'）的光束， 通过模式混合装置（2,2'）发射发光装置，从而获得具有最小纹波率对光强度的近场图案。
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公开(公告)号：EP1283574A3
公开(公告)日：2005-04-13
申请号：EP02013150.4
申请日：2002-06-14
发明人： Matsumoto, Mitsuhiro
IPC分类号： H01S5/223
CPC分类号： H01S5/2231 , H01S5/2004 , H01S5/222
摘要： There is provided a semiconductor laser element, which has a small capacitance outside a ridge portion and high response speed and is able to effect pulse oscillation with a satisfactory pulse waveform. On a GaAs substrate 101, there are provided an n-type buffer layer 102, an n-type first clad layer 103, an MQW active layer 104, a p-type second clad layer 105, a p-type etching stop layer 106 that has an energy bandgap smaller than that of this second clad layer 105, a p-type third clad layer 107 that constitutes a ridge portion and a p-type protective layer 108. On both sides in the widthwise direction of the ridge portion are laminated a p-type spacer layer 109, an n-type current light confining layer 110, an n-type current confining layer 111 and a p-type flattening layer 112. On these layers is laminated a p-type contact layer 113. A depletion layer spreads into the spacer layer 109 when a bias voltage is applied. Therefore, a capacitance between the spacer layer 109 and the current light confining layer 110 is reduced, and a response speed during the pulse oscillation of the semiconductor laser element becomes fast.
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公开(公告)号：EP0908988A3
公开(公告)日：2001-10-17
申请号：EP98308112.6
申请日：1998-10-06
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/025 , H01L33/06 , H01L33/32 , H01S5/0657 , H01S5/2004 , H01S5/2231 , H01S5/305 , H01S5/3211 , H01S5/3407 , H01S5/3421 , H01S2301/185
摘要： A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum well layers and a quantum barrier layer interposed between the adjacent quantum well layers. The first guide layer and the second guide layer are disposed to be adjacent to the quantum well layers. The first guide layer and the second guide layer have a forbidden band width which is larger than a forbidden band width of the quantum well layers. The forbidden band width of at least one of the first guide layer and the second guide layer is smaller than a forbidden band width of the quantum barrier layer.
摘要翻译： 发光装置包括第一引导层; 第二引导层; 以及介于第一引导层和第二引导层之间的有源层。 有源层具有包括多个量子阱层和插入在相邻量子阱层之间的量子势垒层的多量子阱结构。 第一引导层和第二引导层被设置为与量子阱层相邻。 第一引导层和第二引导层的禁带宽度大于量子阱层的禁带宽度。 第一引导层和第二引导层中的至少一个的禁带宽度小于量子势垒层的禁带宽度。
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公开(公告)号：EP0789430B1
公开(公告)日：2000-02-16
申请号：EP97106425.8
申请日：1992-12-24
CPC分类号： H01S5/0425 , H01S5/0201 , H01S5/0281 , H01S5/164 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
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公开(公告)号：EP0558856B1
公开(公告)日：1998-03-04
申请号：EP92311823.6
申请日：1992-12-24
IPC分类号： H01S3/025
CPC分类号： H01S5/0425 , H01S5/0201 , H01S5/0281 , H01S5/164 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
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公开(公告)号：EP0789430A3
公开(公告)日：1997-11-05
申请号：EP97106425.8
申请日：1992-12-24
CPC分类号： H01S5/0425 , H01S5/0201 , H01S5/0281 , H01S5/164 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
摘要翻译： 一种用于制造半导体激光器件的方法，包括以下步骤：在内部结构的顶表面或衬底的背面中的任一个上以及内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 并在通过蚀刻去除窗口层的表面上形成电极，并在另一表面上形成电极。 另一种制造半导体激光器件的方法包括以下步骤：在棒的发光端面上形成窗口层; 将棒插入具有用于形成电极的开口和用于防止棒与开口之间的位置偏移的支撑部的装置中，并且在棒的顶表面和相反表面上形成电极; 并将棒切成碎片。
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公开(公告)号：EP0778625A3
公开(公告)日：1997-10-29
申请号：EP97102514.3
申请日：1992-11-25
发明人： Watanabe, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38
摘要： A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
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公开(公告)号：EP0477033B1
公开(公告)日：1996-06-12
申请号：EP91308619.5
申请日：1991-09-23
发明人： Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Takeoka, Tadashi , Nakatsu, Hiroshi , Watanabe, Masanori , Yamamoto, Osamu , Yamamoto, Saburo
CPC分类号： H01S5/164 , H01L33/0062 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325 , H01S2301/18
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公开(公告)号：EP0376752B1
公开(公告)日：1994-06-15
申请号：EP89313703.4
申请日：1989-12-29
CPC分类号： H01S5/10 , H01S5/16 , H01S5/2234 , H01S5/2235 , H01S5/24
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