摘要:
Eine Verdampferzelle (100), insbesondere zur Verdampfung eines hochschmelzenden Verdampfungsguts, umfasst einen Tiegel (10) zur Aufnahme des Verdampfungsguts, und eine Heizeinrichtung (20) mit einem Heizwiderstand (21) zur Widerstandsheizung des Tiegels (10), wobei der Heizwiderstand (21) als ein Elektronenemitter zur Elektronenstrahlheizung des Tiegels (10) vorgesehen ist. Es wird auch ein Verfahren zur Verdampfung eines hochschmelzenden Verdampfungsguts beschrieben.
摘要:
The phosphorus effusion cell arrangement according to the present invention comprises a first vacuum container for red phosphorus, a second vacuum container for white phosphorus, said first and second vacuum containers being interconnected, means for providing vacuum, a thermal cracker in connection with said second vacuum container, as well as a control valve between said second vacuum container and said thermal cracker. The present invention is characterized in that it further comprises a separating valve between said first and second vacuum containers, provided that there is no direct connection between said first vacuum container and said thermal cracker. The invention also relates to a method for producing molecular phosphorus P2.
摘要:
A vacuum deposition method is provided. In the vacuum deposition for evaporating a sublimation evaporation material (22), the gas sealed-type heating container (11) has the blast aperture (14) and an area for evaporating the evaporation material by the radiation heat from the inner surface thereof. The holder (15) holds an evaporation material in a region in which the evaporation material does not evaluate due to the heatconduction from the heating container (11). Thus, the generated vapor is emitted from the blast aperture (14) into the deposition subject surface outside the container.
摘要:
Die Temperaturankopplung des Tiegels (4) einer Effusionszelle an ein den Tiegel (4) umgebendes, als heizbares Kühlreservoir dienendes Aufnahmeteil (1) wird dadurch verbessert, indem in den Zwischenraum (2) zwischen dem Tiegel (4) und der Wand einer Ausnehmung (1A) des Aufnahmeteils (1) ein Übertragungsmedium mit hoher Wärmeleitfähigkeit und niedrigem Dampfdruck (bsp. Ga, In, Hg oder weicher Feststoff) eingebracht wird. Durch die verbesserte thermische Ankopplung des Tiegels (4) folgt die Temperatur des Tiegels (4) schneller der des heizbaren Kühlreservoirs, so dass Materialien mit hohem Dampfdruck mit relativ niedrigen Verdampfungstemperaturen kontrollierter abgeschieden werden können.
摘要:
This invention is a sublimating and cracking apparatus for producing a beam of molecules to be deposited on a substrate, and an apparatus which is particularly useful with phosphorus as the source material. In the phosphorus effusion cell of this invention, a vacuum jacket (10) encloses and supports a red phosphorus crucible (12), a condensing crucible for white phosphorus (14) and a connecting tube (16) within a vacuum space (19). In use, red phosphorus is first transformed and deposited as white phosphorus in the condensing chamber. The white phosphorus is then directed to a cracker section (20) where it is cracked and subsequently directed to the substrate.
摘要:
A molecular beam epitaxy effusion cell for growing epitaxial layers upon a semiconductor substrate by control of a collimated beam of molecules generated from a source material in a high vacuum environment in order to control the hyper abrupt stoichiometry of the effusion flux. A heated control assembly is used to control the size of the exit openings of the effusion cell. The control assembly comprises a boroelectric heating member such as a grating having a plurality of holes and a perforated cover which are adjustable relative to one another. The grating includes an internal heating element.
摘要:
Disclosed is a crucible of pyrolytic boron nitride (PBN) for molecular beam epitaxy for melting of the source material, with which the troubles due to adhering of the molten source material in the form of drops caused on the quality of the epitaxial layer can be greatly decreased. Namely, the inner surface of the crucible is free from pits or other irregularities responsible to the adhering of the melt when the growth plane, which can be exposed by stripping of the surface layer of 0.50 mm thickness by cleavage, has a surface roughness Ra not exceeding 2.0 µm and Rmax not exceeding 18 µm. Such a PBN crucible can be prepared by the CVD method to deposit PBN on the surface of a graphite core of which the surface roughness Ra does not exceed 2 µm.