公开(公告)号：EP1481469B1

公开(公告)日：2008-11-12

申请号：EP03704288.4

申请日：2003-02-04

申请人： Infineon Technologies AG

发明人： OEHM, Jürgen

IPC分类号： H03B1/04

CPC分类号： H03B5/1271 ,  H03B5/129 ,  H03B2201/0283

摘要： Disclosed is a circuit system generating a reference current (Iref) and an oscillator circuit which comprises said circuit system and a capacitor (8) that is connected to the input of a voltage-controlled source of electric power (1). Said capacitor (8) is triggered by two inter-switchable amplifiers (4, 6) with different driving capacities (gm1, gm2). According to said principle, an LC oscillator (14), for example, can be electrically controlled while being fed with the reference current (Iref) at a particularly low noise level.

公开(公告)号：EP1777812A1

公开(公告)日：2007-04-25

申请号：EP05745432.4

申请日：2005-04-18

申请人： Yan, Yuejun

发明人： Yan, Yuejun

IPC分类号： H03F1/30 ,  H03B1/04

CPC分类号： H03F3/16 ,  H03F1/301 ,  H03F2200/18

摘要： The present invention discloses an FET (Field Effect Transistor) bias circuit comprising a current-changing information circuit having a power source, a resistor connected to the signal output end of this circuit, the other end of the resistor connected to a reference voltage source, and the node between the resistor and the current-changing information circuit acting as the output end providing voltage-changing information; and a voltage divider circuit connected to at least one voltage source, and connected to the output end providing the voltage-changing information; the current in a signal FET is controlled by providing the voltage-changing information at the output end to the voltage divider circuit, and getting a dividing voltage from the voltage divider circuit as an output end of the FET bias circuit. The bias circuit of the present invention causes the static drain current of the signal FET to remain constant, and reduces the variation of the static drain current of the signal FET of each chip made from an entire wafer. Its cost is low, its size is small, and it is easy to be integrated and fabricated.

摘要翻译： 本发明公开了一种FET（场效应晶体管）偏置电路，其包括具有电源的电流变化信息电路，连接到该电路的信号输出端的电阻，连接到参考电压源的电阻器的另一端， 以及所述电阻器和作为提供电压变化信息的输出端的所述电流变化信息电路之间的节点; 以及分压器电路，连接到至少一个电压源并连接到提供电压变化信息的输出端; 信号FET中的电流通过在输出端向分压器电路提供电压变化信息并从作为FET偏置电路的输出端的分压器电路获得分压来控制。 本发明的偏置电路使得信号FET的静态漏极电流保持恒定，并且减小了由整个晶片制成的每个芯片的信号FET的静态漏极电流的变化。 它的成本低，尺寸小，易于集成和制造。

公开(公告)号：EP1775843A1

公开(公告)日：2007-04-18

申请号：EP06255210.4

申请日：2006-10-10

申请人： STMicroelectronics, Inc.

发明人： Krivokapic, Ivan ,  Divel, Thierry

IPC分类号： H04B1/04 ,  H03B21/02 ,  H03H17/02 ,  H03B1/04 ,  H03L7/107 ,  H03L7/185

CPC分类号： H03L7/099 ,  H03B21/01 ,  H03D7/165 ,  H03J3/08 ,  H03L7/0805 ,  H03L7/107 ,  H03L7/18 ,  H03L7/185 ,  H04B1/30

摘要： A single sideband mixer circuit includes a voltage controlled oscillator operable to provide a tunable frequency f1. The mixer circuit outputs a frequency signal at a frequency f1 ± f2. A tracking filter operates to filter the frequency signal and generate a first output signal at the frequency f1 ± f2. A resonance frequency fr of the tracking filter is tunable to substantially match the frequency f1 ± f2 of the frequency signal. The output signal of the tracking filter may be processed by a phase lock loop circuit to generate a control signal for controlling the setting of the tunable frequency f1 and resonance frequency fr. Alternatively, the output signal of the tracking filter may be divided and the divided signal processed by a phase lock loop circuit to generate the control signal for controlling setting of the tunable frequency f1 and resonance frequency fr.

摘要翻译： 单个边带混频器电路包括可操作以提供可调谐频率f1的压控振荡器。 混频器电路以f1±f2的频率输出频率信号。 跟踪滤波器用于对频率信号进行滤波并产生频率为f1±f2的第一输出信号。 跟踪滤波器的谐振频率fr可调，以使频率信号的频率f1±f2基本匹配。 跟踪滤波器的输出信号可以由锁相环电路来处理，以产生用于控制可调频率f1和谐振频率fr的设置的控制信号。 或者，跟踪滤波器的输出信号可以被分频，并且由锁相环电路处理的分频信号产生用于控制可调谐频率f1和谐振频率fr的设置的控制信号。

公开(公告)号：EP1484843A4

公开(公告)日：2005-12-21

申请号：EP03700511

申请日：2003-01-09

申请人： NAT INST INF & COMM TECH

发明人： SHOJI YOZO ,  HAMAGUCHI KIYOSHI ,  OGAWA HIROYO

IPC分类号： H03B1/04 ,  H03B5/12 ,  H04B1/26 ,  H04B1/40 ,  H04L12/28 ,  H04W56/00 ,  H04W84/12

CPC分类号： H04B1/405 ,  H03B2202/027

摘要： A reference local oscillation signal transmitting station (1) radiates a reference local oscillation signal to a service zone. The signal received by each radio slave station terminal (2) is partially branched and inputted to an injection-locked oscillator (6), thereby obtaining a local oscillation signal synchronized with the reference local oscillation signal. The slave station terminal (2) branches the thus obtained local oscillation signal into two, one of which is inputted to a transmission frequency converter (mixer) (7), and the other of which is inputted to a reception frequency converter (mixer) (8). An IF band transmission modulation signal is inputted to the mixer (7), frequency-converted to a radio frequency band, and thereafter transmitted. On the other hand, a received radio modulation signal is inputted to the mixer (8), down-converted, and thereafter inputted to an IF band demodulator (10), thereby restoring information signal. The invention can resolve the problems of phase noise occurring due to a millimeter wave band oscillator and of signal quality degradation due to a frequency offset, and can raise the frequency utilization efficiency at the same time.

公开(公告)号：EP0740859B1

公开(公告)日：2002-06-05

申请号：EP95906819.8

申请日：1995-01-10

申请人： ATMEL CORPORATION

发明人： PAYNE, James, E. ,  PATHAK, Saroj ,  ROSENDALE, Glen, A.

IPC分类号： H03B1/04 ,  H04B1/10 ,  H04B15/00 ,  H01C7/12 ,  H03K5/00 ,  H02H1/00 ,  H02H1/04 ,  H02H3/20 ,  H02H3/22 ,  H02H7/00 ,  H02H9/04 ,  H03K19/003

CPC分类号： H03K19/00315 ,  H02H9/046

摘要： A protection circuit includes a first controlled path for discharging negative ESD pulses introduced at a signal node (30). The first controlled path is from the signal node to (Vcc) via the source and drain electrodes of a first transistor (36). The gate of the transistor is at a soft ground by connection of the gate through a resistor (42) and an inverter (44) to a fixed voltage supply potential (Vcc). A second controlled path discharges positive ESD pulses via source and drain regions of serially connected second (50) and third (52) transistors to ground. The second transistor (50) has a gate tied at (Vcc) by means of a resistor (62) and an inverter (66) to ground. The third transistor (52) is at soft ground by means of a resistor (64) and inverter (68) to (Vcc). The third transistor is turned on by a positive voltage exceeding the threshold voltage of the third transistor, but the second transistor prevents damage to the third transistor by limiting the voltage applied to the third transistor. The protection circuit may include a third controlled path through a fourth transistor (54), if low voltage circuitry (32) is tied to the signal node (30). The fourth transistor (54) includes a gate that is tied high by connection of the gate to ground via a resistor (82) and inverter (84).

公开(公告)号：EP0865154A3

公开(公告)日：2000-11-22

申请号：EP98301616.3

申请日：1998-03-04

申请人： STMicroelectronics, Inc.

发明人： Brady, James

IPC分类号： H03B1/04 ,  H03B5/32 ,  G06F1/18

CPC分类号： H03B5/32 ,  G06F1/182 ,  H03B1/04

摘要： In a high current, high frequency integrated circuit chip characteristic of producing an excess of internal on-chip circuit induced noise with respect to a low current, low frequency circuit implemented on the high current, high frequency integrated circuit chip, a method is disclosed for reducing noise in the low current, low frequency circuit. The method includes placing noise sensitive components of the low current, low frequency circuit external to the integrated circuit chip, corresponding to an off-chip placement. An exclusive power supply reference line V (REF) tapped off of a power supply bus internal to the integrated circuit chip is provided. The exclusive power supply reference line V (REF) is tapped off the internal power supply bus on-chip at a physical location proximate the low current, low frequency circuit and routed off-chip. The noise sensitive components are connected between the low current, low frequency circuit and the power supply reference line V (REF) , wherein a noise differential in a power supplied to the low current, low frequency circuit on-chip and a power supplied to the noise sensitive components off-chip is minimized. An integrated circuit arrangement is also disclosed.

公开(公告)号：EP0647372B1

公开(公告)日：1999-05-26

申请号：EP92914435.0

申请日：1992-06-25

申请人： NOISE CANCELLATION TECHNOLOGIES, INC.

发明人： EATWELL, Graham

IPC分类号： H03B1/04 ,  H04B1/10 ,  G10K11/178

CPC分类号： G10K11/178 ,  G10K2210/121 ,  G10K2210/3028 ,  G10K2210/3032 ,  G10K2210/3051 ,  G10K2210/512

公开(公告)号：EP0694234A4

公开(公告)日：1995-09-14

申请号：EP92914496

申请日：1992-06-25

申请人： NOISE CANCELLATION TECH

发明人： EATWELL GRAHAM

IPC分类号： G10K11/178 ,  H04B15/00 ,  H03B1/04 ,  H04B1/10

CPC分类号： G10K11/178 ,  G10K2210/121 ,  G10K2210/3028 ,  G10K2210/3032 ,  G10K2210/3045

摘要： A control system for controlling periodic disturbances employing a delay inverse filter (5) for supplying a signal, in response to a disturbance signal received by a sensor (1), a variable delay circuit (6) which is adjusted such that the delay through the delayed inverse filter and the variable delay is equal to a whole number of cycles of the disturbance signal. The output from said variable delay circuit being supplied to an actuator (9) such that it is combined with said disturbance signal at the sensor.

公开(公告)号：EP0656683A1

公开(公告)日：1995-06-07

申请号：EP94118392.3

申请日：1994-11-23

申请人： DEUTSCHE THOMSON-BRANDT GMBH

发明人： Rieger, Martin ,  Rothermel, Albrecht

IPC分类号： H03B1/04 ,  H03L7/099

CPC分类号： H03B1/04 ,  H03B2202/04 ,  H03L7/0995

摘要： Es ist bekannt, in integrierten Schaltungen einen Oszillator zu verwenden, der einen Mischer ansteuert. Weiterhin wird dem Mischer durch einen äußeren Schwingkreis ein HF-Signal zugeführt, welches durch den Mischer in ein ZF-Siganl umgewandelt wird. Bei einer derartigen Anordnung entstehen durch Empfangen und Aussenden von hohen Frequenzen Störungen.
Der Erfindung liegt die Aufgabe zugrunde, auf einfache Weise eine Anordnung zur Verringerung von Störungen bei Schwingkreisen in integrierten Schaltungen zu schaffen. Erfindungsgemäß wird der äußere Schwingkreis in die integriete Schaltung integriert. Die Störungen, welche ansonsten durch die Anschluß-Pins entstanden sind, entfallen somit.
Insbesondere bei Fernsehempfängern

摘要翻译： 已知在集成电路中使用驱动混频器的振荡器。 此外，由混频器转换成IF信号的RF信号通过外部谐振电路馈送到混频器。 在这种布置的情况下，作为高​​频的接收和传输的结果产生干扰。 本发明基于以简单的方式提供用于减少集成电路中的谐振电路中的干扰的装置的目的。 根据本发明，外部谐振电路集成在集成电路中。 否则由连接引脚产生的干扰因此消失。 特别是对于电视接收机。

公开(公告)号：EP0205771A1

公开(公告)日：1986-12-30

申请号：EP86103905

申请日：1986-03-21

申请人： CSELT CENTRO STUDI LAB TELECOM

发明人： ACCATINO LUCIANO ,  BERTIN GIORGIO

IPC分类号： H03B1/04 ,  H03B5/04 ,  H03B5/18

CPC分类号： H03B5/1876 ,  H03B5/04 ,  H03B5/1852 ,  H03B2200/0028 ,  H03B2202/03 ,  H03B2202/05

摘要： An integrated microwave oscillator, wherein the generated frequency is stabilized by a dielectric resonator (RD) with high quality factor and stability. The positive feedback is assured not only by the dielectric resonator coupled to a line (12) connected to a terminal (1) of the active device (EA), but also by a microstrip resonator (RS) connected in parallel to a second line (4) connected to a second terminal (2) of the active device. The signal generated is extracted from the third terminal (3) of the active device.