摘要:
A hand-held device having a housing and a processor disposed within the housing, includes a camera and a temperature sensing element having an adjustable field of view. The camera is configured to generate an image of an object and to permit the user to frame the image at a portion of the object to determine the temperature of the framed portion. The temperature sensing element includes a plurality of temperature sensors and the processor is configured to select ones of the plurality of sensors to produce a field of view (FOV) of the temperature sensing element that is less than or equal to the frame in the image. The selected sensors are activated to generate signals corresponding to the temperature of the object in the FOV and the processor is configured to determine a sensed temperature based on the sensor signals.
摘要:
A method of fabricating a semiconductor device includes forming an absorber on a substrate, and supporting a cap layer over the substrate to define a cavity between the substrate and the cap layer in which the absorber is located. The method further includes forming a lens layer on the cap layer. The lens layer is spaced apart from the cavity and defines a plurality of grooves and an opening located over the absorber.
摘要:
In one embodiment, a portable temperature sensing system includes a portable housing configured to be carried by a user, a micro electrical mechanical system (MEMS) thermal sensor assembly supported by the housing and including an array of thermal sensor elements, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, determine an average sensed temperature based upon the signals, and render data associated with the determined average sensed temperature.
摘要:
A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer.
摘要:
A semiconductor device includes a substrate having an upper surface that defines a sensing region. A fixed beam structure is supported at a first level above the sensing region. The fixed beam structure includes fixed beam supports that extend upwardly from the upper surface of the substrate to position the fixed beam structure at the first level above the sensing region. An absorber structure is supported above the fixed beam structure at a second level above the sensing region. The absorber structure includes a pillar support that extends upwardly from the fixed beam structure to position the absorber structure at the second level above the sensing region.
摘要:
A semiconductor device includes a substrate, suspension structures extending from the upper surface of the substrate, and an absorber stack attached to the substrate by the suspension structures. The suspension structures suspend the absorber stack over the substrate such that a gap is defined between the absorber stack and the substrate. The absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers. At least one of the metallization layers has a thickness of approximately 10nm or less.
摘要:
In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.