METAMATERIAL AND METHOD FOR FORMING A METAMATERIAL USING ATOMIC LAYER DEPOSITION
    1.
    发明公开
    METAMATERIAL AND METHOD FOR FORMING A METAMATERIAL USING ATOMIC LAYER DEPOSITION 审中-公开
    METAMATERIAL UND VERFAHREN ZUR HERSTELLUNG EINES METAMATERIALS MITTELS ATOMLAGENABSCHEIDUNG

    公开(公告)号:EP2971229A1

    公开(公告)日:2016-01-20

    申请号:EP14770096.7

    申请日:2014-03-08

    IPC分类号: C23C16/44 C23C16/448

    摘要: A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer.

    摘要翻译: 超材料包括通过原子层沉积(ALD)形成的第一材料的第一连续层,在第一连续层的第一上表面的第一上表面上由ALD形成的第二材料的第一非连续层,以及 在所述第一连续层的第一上表面的第二上表面部分上以及在所述第一非连续层的第二上表面上由所述第一材料形成的第二连续层。

    SEMICONDUCTOR SENSOR HAVING A SUSPENDED STRUCTURE AND ITS MANUFACTURING METHOD
    7.
    发明公开
    SEMICONDUCTOR SENSOR HAVING A SUSPENDED STRUCTURE AND ITS MANUFACTURING METHOD 审中-公开
    HALBLEITERSENSOR MITAUFGEHÀ“NGTER STRUKTUR UND DESSEN HERSTELLUNGSVERFAHREN

    公开(公告)号:EP3077804A1

    公开(公告)日:2016-10-12

    申请号:EP14806252.4

    申请日:2014-12-02

    申请人: Robert Bosch GmbH

    IPC分类号: G01N27/12

    摘要: A semiconductor gas sensor device includes a substrate, a conductive layer supported by the substrate, a non-suitable seed layer, and a porous gas sensing layer portion. The non-suitable seed layer is formed from a first material and includes a first support portion supported by the conductive layer, a second support portion supported by the conductive layer, and a suspended seed portion extending from the first support portion to the second support portion and suspended above the conductive layer. The porous gas sensing layer portion is formed from a second material and is supported directly by the non-suitable seed layer in electrical communication with the conductive layer. The first material and the second material form a non-suitable pair of materials.

    摘要翻译: 半导体气体传感器装置包括衬底,由衬底支撑的导电层,非合适的晶种层和多孔气体感测层部分。 非合适种子层由第一材料形成,并且包括由导电层支撑的第一支撑部分,由导电层支撑的第二支撑部分和从第一支撑部分延伸到第二支撑部分的悬挂种子部分 并悬浮在导电层上方。 所述多孔气体感测层部分由第二材料形成,并且由与所述导电层电连通的所述非合适晶种层直接支撑。 第一材料和第二材料形成非合适的材料对。

    METAL OXIDE SEMICONDUCTOR SENSOR AND METHOD OF FORMING A METAL OXIDE SEMICONDUCTOR SENSOR USING ATOMIC LAYER DEPOSITION
    8.
    发明公开
    METAL OXIDE SEMICONDUCTOR SENSOR AND METHOD OF FORMING A METAL OXIDE SEMICONDUCTOR SENSOR USING ATOMIC LAYER DEPOSITION 有权
    金属氧化物半导体传感器以及使用原子层沉积形成金属氧化物半导体传感器的方法

    公开(公告)号:EP3063791A1

    公开(公告)日:2016-09-07

    申请号:EP14856905.6

    申请日:2014-10-30

    申请人: Robert Bosch GmbH

    摘要: A semiconductor sensor device includes a substrate, a non-suitable seed layer located above the substrate, at least one electrode located above the non-suitable seed layer, and a porous sensing layer supported directly by the non-suitable seed layer and in electrical communication with the at least one electrode, the porous sensing layer defining a plurality of grain boundaries formed by spaced-apart nucleation on the non-suitable seed layer using atomic layer deposition.

    摘要翻译: 一种半导体传感器装置包括衬底,位于衬底上方的不合适种子层,位于不合适种子层上方的至少一个电极以及直接由非合适种子层支撑并且电连通的多孔传感层 利用所述至少一个电极,所述多孔传感层使用原子层沉积在所述不合适的种子层上限定通过间隔成核形成的多个晶界。