利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

365 条记录 (耗时 0.015 秒)

    PLASMA PROCESSING METHODS AND APPARATUS
    52.
    发明公开
    PLASMA PROCESSING METHODS AND APPARATUS 有权
    方法和装置与等离子体处理

    公开(公告)号：EP1030788A1

    公开(公告)日：2000-08-30

    申请号：EP98960161.2

    申请日：1998-11-06

    申请人： Trusi Technologies, Llc

    发明人： SINIAGUINE, Oleg

    IPC分类号： B44C1/22 ,  C23C16/00 ,  B05D3/14 ,  B28B1/02

    CPC分类号： H01L21/67017 ,  C23C16/4584 ,  C23C16/513 ,  C23C16/54 ,  H01J37/32743 ,  H01J37/32788 ,  H01J2237/20228 ,  H01J2237/31701 ,  H01L21/67745 ,  H01L21/67796 ,  H01L21/68707

    摘要： To move an article (134) in and out of plasma (120) during plasma processing, the article (134) is rotated by a first drive (140) around a first axis (140X), and the first drive is itself rotated by a second drive (150). As a result, the article (134) enters the plasma (120) at different angles for different positions of the first axis (140X). The plasma cross section (114-0) at the level at which the plasma (120) contacts the article (134) is asymmetric so that those points on the article (134) that move at a greater linear velocity (due to being farther away from the first axis (140X) move longer distances through the plasma (120). As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles (710-1, 710-2) are provided for loading and unloading the plasma processing system. One of the shuttles (710-1) stands empty waiting to load them into the system, while the other shuttle (710-2) holds unprocessed articles (134) waiting to load them into the system. After the plasma processing terminates, the empty shuttle unloads processed articles (134) from the system, takes articles (134) away, and gets unloaded and reloaded with unprocessed articles (134). Meanwhile the other shuttle loads unprocessed articles (134) into the system and the plasma process begins. Since the plasma processing system does not wait for the first shuttle (710-1), the productivity of the system is increased.

    Method and apparatus for plasma deposition
    54.
    发明公开
    Method and apparatus for plasma deposition 失效
    等离子体沉积的方法和设备

    公开(公告)号：EP0969120A2

    公开(公告)日：2000-01-05

    申请号：EP99119093.5

    申请日：1992-05-08

    申请人： CELESTECH, INC.

    发明人： Cann, Gordon L. ,  Shepard, Cecil B., Jr. ,  McKevitt, Frank L.

    IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/26

    CPC分类号： C23C16/276 ,  C23C16/27 ,  C23C16/277 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/513

    摘要： The disclosure is directed to a plasma jet deposition method and apparatus for depositing a substance, such as synthetic diamond. A plasma beam (225) containing constituents of the substance to be deposited is produced. A substrate (150) is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sectional area of the beam impinging on the surface. Repetitive motion is introduced between the substrate and the beam as the substrate is deposited on the surface. The substrate in a plasma jet deposition system can be provided with structural attributes, such as apertures (170) and/or grooves (168), that facilitate efficient deposition. Groups of substrates (610,620,630 and 640) can be arranged with surfaces generally along the envelope of plasma beam to facilitate efficient deposition.

    摘要翻译： 本公开涉及用于沉积诸如人造金刚石的物质的等离子体射流沉积方法和设备。 产生包含待沉积物质成分的等离子束（225）。 提供衬底（150），并且在所述光束的路径中具有表面，所述表面的面积基本大于撞击在所述表面上的光束的横截面面积。 当衬底沉积在表面上时，在衬底和梁之间引入重复运动。 等离子喷射沉积系统中的基底可以设置有促进有效沉积的结构属性，例如孔（170）和/或凹槽（168）。 基底组（610,620,630和640）可以布置为具有大致沿着等离子束的包络线的表面以促进有效的沉积。

    IMPROVED PLASMA JET SYSTEM
    55.
    发明公开
    IMPROVED PLASMA JET SYSTEM 失效
    改进的等离子喷射系统

    公开(公告)号：EP0931176A1

    公开(公告)日：1999-07-28

    申请号：EP97944512.0

    申请日：1997-09-26

    申请人： CELESTECH, INC.

    发明人： RANEY, Daniel, V. ,  HEUSER, Michael, Scott ,  JAFFE, Stephen, M. ,  SHEPARD, C., B., Jr.

    IPC分类号： C30B29 ,  C23C16 ,  H05H1

    CPC分类号： C23C16/4551 ,  C23C16/513 ,  H05H1/42

    摘要： A plasma jet CVD system (100) includes gas injectors (122a-122h) and a stand-off ring (126). The gas injectors have outlet holes (236a-h) preferably flared to approach the expansion angle of the injected jet, thereby keeping the holes substantially free from entrained atomic hydrogen. The injectors are arranged counter-rotational to the swirl of the primary jet, providing a more uniform mixture of hydrocarbons and atomic hydrogen. The stand-off ring provides vents (152a-152d) for cooler gases to enter the nozzle (128), thereby decreasing the overall temperature of the injectors and decreasing the temperature gradient experienced by the injectors, thereby preventing injector cracking. In addition the vents reduce shear, thereby increasing jet velocity and increasing the deposition rate for the coating. In addition, a new method of injector design permits optimal mixing characteristics to be obtained across various recipes whereby the ratio of the mass flux of the primary flow of the jet to the mass flux of the injected flow from the downstream injectors is kept constant.

    摘要翻译： 等离子体喷射CVD系统（100）包括气体喷射器（122a-122h）和支座环（126）。 气体喷射器具有出口孔（236a-h），该出口孔优选地张开以接近喷射射流的膨胀角，由此保持孔基本上没有夹带的原子氢。 喷射器与主射流的旋流成反向旋转，提供更均匀的烃和原子氢混合物。 的对峙环提供通风口（152A-152D），用于冷却器气体进入喷嘴（128），从而降低了喷射器的整体温度和降低由喷射器所经历的温度梯度，从而防止注射器破裂。 另外，通风孔减少剪切力，从而增加射流速度并增加涂层的沉积速率。 此外，为了在各种配方，由此喷射的初级流从下游喷射器所喷射流的质量流量的质量流量之比保持恒定来获得的喷射器设计允许最优混合特性的新方法。

    Nozzle-injector for arc plasma deposition apparatus
    56.
    发明公开
    Nozzle-injector for arc plasma deposition apparatus 失效
    Düsefürein Lichtbogenplasma-Beschichtungsgerät

    公开(公告)号：EP0887110A1

    公开(公告)日：1998-12-30

    申请号：EP98305071.7

    申请日：1998-06-26

    申请人： GENERAL ELECTRIC COMPANY

    发明人： Yang, Barry Lee-Mean

    IPC分类号： B05B7/22 ,  C23C4/12

    CPC分类号： B05B7/226 ,  B05B12/12 ,  C23C4/134 ,  C23C16/513

    摘要： A nozzle-injector was designed and fabricated for plasma deposition of thin-film coatings using a wall-stabilized arc torch as the plasma generator. The divergent design of the nozzle-injector controls the injection, ionization, and reaction of the reagents, and these functions, in turn, determine the coating deposition rate, coating area, coating composition, and coating quality.

    摘要翻译： 设计和制造喷嘴注射器用于使用壁稳定的电弧焰炬作为等离子体发生器来等离子体沉积薄膜涂层。 喷嘴注射器的发散设计控制了试剂的注入，电离和反应，这些功能又决定了涂层沉积速率，涂层面积，涂层组成和涂层质量。

    Improvements in or relating to semiconductor devices
    58.
    发明公开
    Improvements in or relating to semiconductor devices 失效
    Verbesserungen一个Halbleiteranordnungen

    公开(公告)号：EP0762518A2

    公开(公告)日：1997-03-12

    申请号：EP96306593.3

    申请日：1996-09-11

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Abbott, Donald C. ,  Bawa, Mohendra S.

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： C23C16/45519 ,  C23C16/24 ,  C23C16/513 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention is to a method for producing a silicon substrate by masking a substrate (31) to define a deposition area. The silicon, in the form of a gas, is deposited (33) with the silicon onto the deposition area. Deposition is made by a plasma deposition with the substrate under a non-oxygen bearing gas or liquid (32) to prevent the formation of silica.

    摘要翻译： 本发明是通过掩蔽基板（31）来限定沉积区域来制造硅基板的方法。 将气体形式的硅与硅沉积（33）到沉积区上。 通过在非含氧气体或液体（32）下的等离子体沉积与基底进行沉积以防止二氧化硅的形成。