摘要:
The present invention relates to a method for mutually aligning a scanning electron microscope SEM and a light microscope LM by creating a change (61) in the detected light signal of the light microscope LM by illuminating a substrate with an electron beam, correlating the position of the electron beam in the coordinate system of the scanning electron microscope SEM to the position of the observed change in the detected light signal in the coordinate system of the light microscope LM, and relatively shifting the scanning electron microscope SEM and the light microscope LM with respect to one another to a desired relative position of the coordinate systems (60, 62).
摘要:
Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises a tilting ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. Complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. The tilting ion beam irradiating means may direct ions at the sample from more than one tilt angle. A rotating shield retention stage is also disclosed which works in concert with the tilting ion beam irradiating means to improve the flexibility and efficiency of the apparatus in preparing samples for microscopic observation.
摘要:
The invention relates to an environmental cell for use in e.g. an electron microscope. The environmental cell shows an aperture (15) for passing the beam produced by the electron microscope to a sample (6) placed inside the environmental cell. The environmental cell according to the invention is characterized in that a part of the environmental cell (14) is transparent to secondary radiation such as back-scattered electrons or X-rays. This enables the detection of this radiation by a detector placed outside the environmental cell and thus a much simpler construction of the cell.
摘要:
An electron microscope (1) is offered which facilitates aberration correction even during high-magnification imaging. The microscope (1) has a spherical aberration corrector (14), a transfer lens (15) system mounted between the corrector (14) and an objective lens (17), an aperture stop (13) mounted in a stage preceding the corrector (14) so as to be movable relative to the optical axis (2), and an angular aperture stop (16) mounted at or near the principal plane of the transfer lens system (15) movably relative to the optical axis (2) to adjust the angular aperture of the electron beam (3).
摘要:
After a certain direction of a sample piece is allowed to coincide with an intersection line made by two planes of a surface of the sample (7) and a conical side plane (10) obtained by rotating, around a manipulator rotation axis (2), a line segment which is vertical to the surface of the sample and of which one end is an intersection of the surface of a sample and the manipulator rotation axis, the sample piece is supported by a manipulator (1) and the manipulator rotation axis is operated.
摘要:
Irradiation system that comprises a beam generation source (1), a mass analysis device (3), a beam transformer, a deflector (7) for scanning which swings the beam reciprocally, a beam parallelizing device (10,29), an acceleration/deceleration device (11,12), and an energy filtering device (18), and a hybrid angular energy filter (18) generating both electric and magnetic fields to ajust trajectories is provided as the energy filtering device, along with a pair of multi-surface energy slit units (19,19') each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.
摘要:
Eine Positioniereinrichtung (5) zum Positionieren einer Blende (4) in einem Ionenstrohl (3) einer Ionen-Implantationsanlage (1) hat zwei mittels mindestens eines Positionierantriebs (10a, 10b, 10c) relativ zueinander verstellbare Vorrichtungsteile (7, 8), von denen das eine mit einer ortsfest zu einer Ionenstrahlquelle angeordneten Widerlagerstelle (9) und das andere mit der Blende (4) verbindbar oder verbunden ist. Eine Justiereinrichtung weist eine Verstelleinrichtung und einer Anzeigeeinrichtung auf. Mittels der Verstelleinrichtung ist die Position mindestens eines der Vorrichtungsteile (7, 8) relativ zu dem Positionierantrieb (10a, 10b, 10c) veränderbar. Mittels der Anzeigeeinrichtung ist überprüfbar, ob sich die Vorrichtungsteile (7, 8) in einer vorbestimmten Lage relativ zueinander befinden. Die Anzeigeeinrichtung weist an dem ersten Vorrichtungsteil (7) oder einem fest damit verbundenen Teil mindestens eine Referenzmarke (18a, 18b) und an dem zweiten Vorrichtungsteil (8) mindestens eine optische Projektionseinrichtung (17) auf, mittels der auf das erste Vorrichtungsteil (7) wenigstens eine optische Markierung projizierbar ist, die der mindestens einen Referenzmarke (18a, 18b) zugeordnet ist.
摘要:
An electron beam exposure apparatus comprising: column 1 for irradiating an electron beam to wafer 10 serving as a sample; sample chamber 3 having vacuum pump 40 as a vacuum exhaustion unit for controlling the internal unit to a vacuum atmosphere; stage 4A arranged in the sample chamber 3 for holding and moving the wafer 10; and first mounting 5A for elastically supporting the column 1 with respect to the sample chamber 3.