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公开(公告)号：EP1769500A2
公开(公告)日：2007-04-04
申请号：EP05786775.6
申请日：2005-06-17
CPC分类号： G11B9/1409 , G11B9/00 , G11B9/04 , G11B9/14 , G11B9/1427 , Y10S977/943
摘要： A semiconductor storage device (30) including a tip electrode (40, 42, 114), a media electrode (48) and a storage media (44). The storage media has a storage area (46) configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a current (60) through the storage area between the tip electrode and media electrode.
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52.发明授权
公开(公告)号：EP1131820B1
公开(公告)日：2006-01-25
申请号：EP99972349.7
申请日：1999-11-16
发明人： SALUEL, Didier , BECHEVET, Bernard
IPC分类号： G11B9/04
CPC分类号： B82Y10/00 , G06K7/081 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B11/007 , G11B11/08
摘要： The invention concerns a method for reading a data storage medium (1) comprising a recording layer (14) with a succession of material zones (14a, 14c) having distinct first and second physical states of the material respectively. The invention is characterised in that it consists in scanning the recording layer with means (100) detecting an electric field.
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公开(公告)号：EP1431970A3
公开(公告)日：2005-12-28
申请号：EP03257917.9
申请日：2003-12-16
摘要： A data storage device (110, 210) includes a storage medium (116, 216) and a contact probe (112). The storage medium (116, 216) includes a first polymeric layer(118, 218), and a second polymeric layer (120) on the first polymeric layer (118, 218). The first polymeric layer (118, 218) is electrically conductive. The contact probe (112) faces the second polymeric layer (120).
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公开(公告)号：EP1471516A2
公开(公告)日：2004-10-27
申请号：EP04251525.4
申请日：2004-03-17
发明人： Birecki, Henryk , Kuo, Huei-Pei , Lam, Si-Ty , Gibson, Gary A.
摘要： In an ultra-high-density data storage device that includes at least one energy beam emitter (240) and a data storage medium (210) that itself includes an organic material (200), the organic material may include one or more Langmuir-Blodgett layers and may include a conductive polymer. Localized presence or absence of localized disorder in the Langmuir-Blodgett layers may be used to detect data bits formed in the data storage medium. The present or absence of one-dimensional conductivity in the organic material may also be used to read data bits formed in the data storage medium.
摘要翻译： 数据存储装置（20）包括一对电极（220,230）和包含在两个电极之间的Langmuir-Blodgett膜的有机材料（200）的存储层（210），以及更靠近存储层设置的电子发射器（240） 。 还包括用于数据存储和检索方法的独立权利要求。
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公开(公告)号：EP1431970A2
公开(公告)日：2004-06-23
申请号：EP03257917.9
申请日：2003-12-16
摘要： A data storage device (110, 210) includes a storage medium (116, 216) and a contact probe (112). The storage medium (116, 216) includes a first polymeric layer(118, 218), and a second polymeric layer (120) on the first polymeric layer (118, 218). The first polymeric layer (118, 218) is electrically conductive. The contact probe (112) faces the second polymeric layer (120).
摘要翻译： 数据存储设备（110,210）包括存储介质（116,216）和接触探针（112）。 存储介质（116,216）包括在第一聚合物层（118,218）上的第一聚合物层（118,218）和第二聚合物层（120）。 第一聚合物层（118,218）是导电的。 接触探针（112）面向第二聚合物层（120）。
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公开(公告)号：EP1170147A4
公开(公告)日：2004-04-14
申请号：EP00908019
申请日：2000-03-10
IPC分类号： G11B7/2433 , G03G5/02 , G11B7/26 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B13/00 , G11C16/02 , H01L45/00 , B41M5/26 , G11B7/24
CPC分类号： G11B13/00 , G03G5/02 , G11B7/243 , G11B7/2433 , G11B7/2585 , G11B7/26 , G11B7/266 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , G11B2007/2571 , G11B2007/25713 , G11C13/0004 , G11C13/04 , G11C2029/0403 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683 , Y10T428/21
摘要： An information recording medium having such a recording material layer on a substrate where reversible phase transition between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The recording material forming the recording layer is either a material having a crystal structure including lattice defects in one phase of the reversible phase transition or a material having a complex phase composed of a crystal portion including a lattice defect in one phase of the reversible phase transition and an amorphous portion. Both portions contain a common element. A part of the lattice defects are filled with an element other than the element constituting the crystal structure. The recording medium having a recording thin film exhibits little variation of the recording and reproduction characteristics even after repetition of recording and reproduction excellent weatherability, strong resistance against composition variation, and easily controllable characteristics.
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公开(公告)号：EP1091355A3
公开(公告)日：2003-05-07
申请号：EP00308015.7
申请日：2000-09-14
发明人： Naito, Katsuyuki , Hieda, Hiroyuki
CPC分类号： B82Y10/00 , G11B9/08 , G11B9/1409 , G11B13/06
摘要： The present invention provides a recording medium (10) having a plurality of charge accumulating regions (14) each containing a first material capable of accumulating an electric charge and a photoconductive region (17) containing a second material whose conductivity is increased by light absorption, a recording apparatus including such a recording medium (10), and a method recording information on such a recording medium (10). In the present invention, information is recorded on the recording medium (10) by irradiating the photoconductive region (17) with light and by injecting an electric charge into the charge accumulating region (14) via that portion of the photoconductive region (17) which is irradiated with light.
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公开(公告)号：EP0851417B1
公开(公告)日：2002-09-04
申请号：EP97403118.9
申请日：1997-12-22
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59.发明公开Apparatus for recording and reading data and method of recording and reading data using contact resistance measurement thereof 审中-公开数据记录和制造接触电阻测量的再现设备和数据记录和-WIDERGABEMETHODE USE
公开(公告)号：EP1213716A2
公开(公告)日：2002-06-12
申请号：EP01124829.1
申请日：2001-10-18
发明人： Choi, Jae-joon, 1Curie Lab Inc. , Jeon, Jong Up, School of Mech.& Auto.Engineering , Shin, Jung-gyu
CPC分类号： G11B9/1463 , B82Y10/00 , G11B9/04 , G11B9/14
摘要： An apparatus for recording and reading data by measuring contact resistance and a method for recording and reading data thereof are provided. The apparatus for recording and reading data includes a storage medium and a probe which is installed to face the storage medium and is used for recording data on the storage medium and reading the data from the storage medium. The storage medium includes a substrate (35), a conductive layer (34) formed on the substrate and a dielectric layer (33) formed on the conductive layer. With the apparatus for recording and reading data, it is possible to solve problems concerning data retention, data read speed and signal-to-noise ratio which have been at issue in developing data storage media with the use of conventional scanning probe microscopic techniques.
摘要翻译： 提供通过测量接触电阻和用于记录的方法和它们的读取数据用于记录和读取数据的装置。 用于记录和读取数据的装置，包括被安装成面对所述存储介质，用于在存储介质上记录数据和从所述存储介质读取数据的存储介质和探针全部。 该存储介质包括一个基片（35），形成在形成的导电层上的衬底和介电层（33）的导电层（34）。 与用于记录和读取数据的设备，有可能解决问题关于数据保持，数据读取速度和信噪比中显影的数据存储介质与使用的常规扫描探针显微技术已经在哪个问题。
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60.发明公开
公开(公告)号：EP0984444A2
公开(公告)日：2000-03-08
申请号：EP99116054.0
申请日：1999-08-16
CPC分类号： G11B9/14 , B82Y10/00 , G11B9/02 , G11B9/08 , G11B9/1409 , G11B9/1418 , Y10S977/873
摘要： A probe comprises a cantilever (109) having a movable end and formed from an elastic body, an electrocoductive sensing needle (110) arranged at the movable end of the cantilever, and a field effect transistor (T 1 ,106,107,108) arranged at the movable end of the cantilever and having a gate electrode (106) electrically connected to the electrocoductive sensing needle. The probe may further comprises another field effect transistor (T 2 ) formed on the cantilever and having its drain (D 2 ) electrically connected to said electrocoductive sensing needle. An information recording/reproduction apparatus using the probe is provided. A method of manufacturing a probe comprises steps of preparing a substrate (101,102,103) at least having a semiconductor layer on the surface, forming a field effect transistor having a gate electrode (106) in the semiconductor layer, forming an electrocoductive sensing needle (11,110) on the gate electrode (106) and processing the substrate to produce a movable end (109) out of the portion thereof where the field effect transistor is formed.
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