摘要:
A resist composition comprising (a) a polymer having repeating units of the formula: wherein R5, R6 and R7 are independently hydrogen, alkyl, cyano, alkyloxycarbonyl or carbamoyl; Z is a spacer or a direct link; and R is hydroxyalkyl having a protected terminal hydroxy, (b) a photoacid generator, and (c) a solvent, is effective for forming patterns using ArF excimer laser beams.
摘要:
A monomer of the formula: wherein R5, R6 and R7 are independently hydrogen, alkyl, cyano, alkyloxycarbonyl or carbamoyl; Z is a spacer or a direct link; and R is hydroxyalkyl having a protected terminal hydroxy, can produce a polymer useful for producting a resist composition.
摘要:
Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.
摘要:
Azoamide compounds shown by the general formula [1] (Wherein R 1 and R 2 are independently a lower alkyl group, and R 3 is a saturated alkyl group having 2 or more carbon atoms) and their use.
摘要:
A polymer of polyhydroxystyrene derivative containing an acetal or ketal group which can easily be eliminated in the presence of an acid in the molecule and having a very narrow molecular weight distribution gives a resist material suitable for forming ultrafine patterns excellent in resolution, heat resistance, mask linearity, and other properties without causing problems of delay time and the like.