摘要:
Data compression using vector quantization is performed at a high speed by using hardware. Among a plurality of template patterns, a template pattern most similar to the input pattern is searched. For this, a template pattern calculating similarity by using feature amounts of the input pattern and the template pattern is selected. When calculating the similarity between the selected template pattern and the input pattern, the calculation is performed by a bit serial way so as to reduce the number of templates requiring matching by a pattern matching processing in the vector quantization and reduce the number of cycles required for calculation of the matching, thereby executing the data compression using the vector quantization at a high speed.
摘要:
A method and apparatus for manufacturing a multiplayer printed wiring board where the variation in the plate thickness and misregistration are eliminated by eliminating resin flow. The method for manufacturing a multiplayer printed wiring board by stacking a conductive foil or a conductor clad laminate sheet for the outer layer, a prepreg (5), and a conductor clad laminate sheet for the inner layer and then curing the prepreg (5) by hot press is characterized in that impurities are removed from the surface of the conductive foil or the conductor clad laminate sheet for outer layer, the prepreg (5), and the conductor clad laminate sheet for the inner layer by blowing gas (13) thereto before the hot press.
摘要:
A method for treating an exhaust gas, which comprises bringing an exhaust gas discharged from CVD equipment employing silicon-base gas into contact with a transition metal such as nickel or a silicide thereof preheated to a given temperature, thus decomposing a feed gas and high-boiling intermediates contained in the exhaust gas, and then rendering toxic components contained in the exhaust gas harmless.
摘要:
A semiconductor circuit of large-scale integration for storing analog data and multivalued data accurately at high speed. The semiconductor circuit comprises memory cells for analog and multivalued signals, a read circuit provided with an output to produce voltage indicating a value stored in the memory cell, a comparator provided with an output to produce an end-of-write signal when the voltage at the output of the read circuit becomes equal to a predetermined voltage, a write voltage control circuit having an input for receiving analog and multivalued voltage as write voltage of the memory cell and having an output for producing voltage corresponding to the voltage value, and a write voltage switch circuit for supplying the output voltage from the write voltage control circuit to the memory cell until the end-of-write signal appears at the output of the comparator.
摘要:
This invention provides a welding method capable of forming an oxide passivation film having corrosion resistance and an extremely small emission quantity of an outgas during welding at a weld portion and portions nearby, and a process apparatus requiring an ultrahigh-clean atmosphere. A back-seal gas comprising an inert gas contaning 1 ppb to 50 ppm of oxygen gas in caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion. In a process apparatus using welding for installing the apparatus, a back-seal gas comprising an inert gas containing 1 ppb to 50 ppm of oxygen gas is caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion.
摘要:
To provide a developing solution and a developing method, by which an ultrafine pattern of a photoresist can be formed in a high yield and the components of the developing solution remaining on a wafer can be thouroughly removed by washing with ultrapure water after the development. The developing solution is one to be used in preparing a photoresist and comprises a surfactant and an aqueous alkali solution, which is characterized in that it contains H2O2, that the aqueous alkali solution is an aqueous solution of tetramethylammonium hydroxide (TMAH) or one mainly comprising TMAH, and that the molecular weight of the surfactant is 500 to 5,000. The developing method is characterized by using a developing solution for preparing a photoresist comprising a surfactant and an aqueous alkali solution and containing H2O2 to pattern a photoresist on a substrate.
摘要翻译:为了提供显影方案和显影方法,通过该方法可以以高产率形成光致抗蚀剂的超细图案,并且通过在显影后用超纯水洗涤可以清除残留在晶片上的显影溶液的组分。 显影液是用于制备光致抗蚀剂的组合物,其包含表面活性剂和碱性水溶液,其特征在于,其含有H 2 O 2,所述碱性水溶液是四甲基氢氧化铵(TMAH)的水溶液或主要包含 TMAH,表面活性剂的分子量为500〜5000。 显影方法的特征在于使用显影液制备包含表面活性剂和碱性水溶液并含有H 2 O 2的光刻胶的显影液,以在基材上图案化光致抗蚀剂。
摘要:
A semiconductor device of simple circuit capable of comparing the magnitudes of plural data at a high speed. This device has an inverter circuit group containing one or more inverter circuits formed by neuron MOS transistors; means for applying to a first input gate of the inverter circuit a first signal voltage which is common to the inverters belonging to the foregoing inverter circuit group; means for applying predetermined second signal voltage to one or more second input gates other than the first input gate of the inverter; and means for detecting the variation of the output voltage in at least one inverter circuit of the inverter circuit group due to the variation with time of either the first or the second signal voltage or both, and for applying positive feedback to given inverters of the inverter circuit group according to the detection.
摘要:
This invention aims at providing an ion implanter adapted to reduce metal impurity contamination. An ion implanter for introducing predetermined impurities into a semiconductor substrate by irradiating the semiconductor substrate with an accelerated ion beam, characterized in that the portion of a member positioned behind, with respect to a direction of advance of the ion beam, the semiconductor substrate which is irradiated with the ion beam is formed out of material containing at least one of the semiconductor constituting the semiconductor substrate, an oxide of this semiconductor and a nitride thereof as a main component; or coated on an outer surface of the same portion of the member with the material. An ion implanter characterized in that it is formed so that a member positioned behind, with respect to a direction of advance of an ion beam, a semiconductor substrate is not irradiated with the ion beam.
摘要:
This invention aims at providing a generator which is capable of producing large electric power at a low cost without substantially using fossil fuel and without contaminating the global environment, and which can be used instead of a thermal power generating machine. The present invention is characterized in that a solution consisting of a solvent which does not dissociate itself, and a substance added to and dissociating in the solvent, is held in a container having an inner corrosion resisting and insulating surface, an anode of a small work function and a cathode of a large work function being immersed in a mutually opposed state in this solution. The present invention is characterized in that it has a container having an inner corrosion resisting and insulating surface, a solution held in an atmospheric air-isolated state in the interior of the container and consisting of a liquid of an anhydrous hydrogen fluoride and water added thereto, an anode consisting of a material having corrosion resistance and a small work function and a cathode consisting of a material having corrosion resistance and a large work function which are immersed in a mutually opposed state in the solution, and a heat application means.
摘要:
This invention provides a welding method capable of forming on a weld of the material to be welded and in the vicinity thereof in the step of welding a passivated chromium oxide film an outer surface of which has excellent corrosion resisting, a capability of substantially preventing the adsorption of water onto the outer surface, and a capability of permitting water, even when it is adsorbed onto the surface, to be removed simply with low energy; and a welded structure having the same film. A welding method for forming a passivated chromium oxide film on a weld of each material to be welded, consisting of the steps of forming a chromium-containing film at the end of the material which has on its outer surface a passivated oxide film formed by thermal treatment and containing chromium as the main component, setting face to face with each other the ends of the materials thus coated, and welding these ends, whereby a passivated oxide film containing chromium oxide as the main component which has a high corrosion resistance and which does not substantially provide outgassing can be formed on the outer surface of the weld.