DATA PROCESSING DEVICE
    61.
    发明公开
    DATA PROCESSING DEVICE 审中-公开
    数据处理设备

    公开(公告)号:EP1487112A4

    公开(公告)日:2005-12-21

    申请号:EP03705222

    申请日:2003-02-17

    申请人: OHMI TADAHIRO

    摘要: Data compression using vector quantization is performed at a high speed by using hardware. Among a plurality of template patterns, a template pattern most similar to the input pattern is searched. For this, a template pattern calculating similarity by using feature amounts of the input pattern and the template pattern is selected. When calculating the similarity between the selected template pattern and the input pattern, the calculation is performed by a bit serial way so as to reduce the number of templates requiring matching by a pattern matching processing in the vector quantization and reduce the number of cycles required for calculation of the matching, thereby executing the data compression using the vector quantization at a high speed.

    METHOD AND APPARATUS FOR MANUFACTURING MULTILAYER PRINTED WIRING BOARD
    62.
    发明公开
    METHOD AND APPARATUS FOR MANUFACTURING MULTILAYER PRINTED WIRING BOARD 有权
    装置及其制造多层电路板

    公开(公告)号:EP1213953A4

    公开(公告)日:2004-10-06

    申请号:EP00950063

    申请日:2000-08-11

    IPC分类号: H05K3/46

    摘要: A method and apparatus for manufacturing a multiplayer printed wiring board where the variation in the plate thickness and misregistration are eliminated by eliminating resin flow. The method for manufacturing a multiplayer printed wiring board by stacking a conductive foil or a conductor clad laminate sheet for the outer layer, a prepreg (5), and a conductor clad laminate sheet for the inner layer and then curing the prepreg (5) by hot press is characterized in that impurities are removed from the surface of the conductive foil or the conductor clad laminate sheet for outer layer, the prepreg (5), and the conductor clad laminate sheet for the inner layer by blowing gas (13) thereto before the hot press.

    METHOD AND DEVICE FOR TREATING EXHAUST GAS
    63.
    发明公开
    METHOD AND DEVICE FOR TREATING EXHAUST GAS 审中-公开
    VERFAHREN UND VORRICHTUNG ZUR BEHANDLUNG VON ABGAS

    公开(公告)号:EP0968753A4

    公开(公告)日:2002-10-29

    申请号:EP98959174

    申请日:1998-12-11

    IPC分类号: B01D53/86

    CPC分类号: B01D53/8659

    摘要: A method for treating an exhaust gas, which comprises bringing an exhaust gas discharged from CVD equipment employing silicon-base gas into contact with a transition metal such as nickel or a silicide thereof preheated to a given temperature, thus decomposing a feed gas and high-boiling intermediates contained in the exhaust gas, and then rendering toxic components contained in the exhaust gas harmless.

    摘要翻译: 一种用于处理废气的方法和装置,其中使含有含硅气体的CVD系统中排出的废气中包含的原料气体和高沸点中间产物与诸如镍的过渡金属接触 或这种过渡金属的硅化物分解或将其转化成稳定的卤化物,然后对废气中包含的有害成分进行解毒处理。

    METHOD OF FORMING OXIDE PASSIVATION FILM AT WELD PORTION AND PROCESS APPARATUS.
    65.
    发明公开
    METHOD OF FORMING OXIDE PASSIVATION FILM AT WELD PORTION AND PROCESS APPARATUS. 失效
    工艺用于生产OXIDSPASSIVIERUNGSSCHICHT焊接点位,及其装置。

    公开(公告)号:EP0642871A4

    公开(公告)日:1997-04-23

    申请号:EP93910412

    申请日:1993-05-28

    CPC分类号: B23K35/383 C23C8/10

    摘要: This invention provides a welding method capable of forming an oxide passivation film having corrosion resistance and an extremely small emission quantity of an outgas during welding at a weld portion and portions nearby, and a process apparatus requiring an ultrahigh-clean atmosphere. A back-seal gas comprising an inert gas contaning 1 ppb to 50 ppm of oxygen gas in caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion. In a process apparatus using welding for installing the apparatus, a back-seal gas comprising an inert gas containing 1 ppb to 50 ppm of oxygen gas is caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion.

    DEVELOPING SOLUTION AND DEVELOPING METHOD.
    66.
    发明公开
    DEVELOPING SOLUTION AND DEVELOPING METHOD. 失效
    发展解决方案和发展方法。

    公开(公告)号:EP0597100A4

    公开(公告)日:1997-04-02

    申请号:EP92914442

    申请日:1992-07-02

    申请人: OHMI TADAHIRO

    发明人: OHMI TADAHIRO

    IPC分类号: G03F7/32 H01L21/027 H01L21/30

    CPC分类号: G03F7/322

    摘要: To provide a developing solution and a developing method, by which an ultrafine pattern of a photoresist can be formed in a high yield and the components of the developing solution remaining on a wafer can be thouroughly removed by washing with ultrapure water after the development. The developing solution is one to be used in preparing a photoresist and comprises a surfactant and an aqueous alkali solution, which is characterized in that it contains H2O2, that the aqueous alkali solution is an aqueous solution of tetramethylammonium hydroxide (TMAH) or one mainly comprising TMAH, and that the molecular weight of the surfactant is 500 to 5,000. The developing method is characterized by using a developing solution for preparing a photoresist comprising a surfactant and an aqueous alkali solution and containing H2O2 to pattern a photoresist on a substrate.

    摘要翻译: 为了提供显影方案和显影方法,通过该方法可以以高产率形成光致抗蚀剂的超细图案,并且通过在显影后用超纯水洗涤可以清除残留在晶片上的显影溶液的组分。 显影液是用于制备光致抗蚀剂的组合物,其包含表面活性剂和碱性水溶液,其特征在于,其含有H 2 O 2,所述碱性水溶液是四甲基氢氧化铵(TMAH)的水溶液或主要包含 TMAH,表面活性剂的分子量为500〜5000。 显影方法的特征在于使用显影液制备包含表面活性剂和碱性水溶液并含有H 2 O 2的光刻胶的显影液,以在基材上图案化光致抗蚀剂。

    SEMICONDUCTOR DEVICE.
    67.
    发明公开
    SEMICONDUCTOR DEVICE. 失效
    半导体器件。

    公开(公告)号:EP0653793A4

    公开(公告)日:1997-03-19

    申请号:EP93916243

    申请日:1993-07-29

    摘要: A semiconductor device of simple circuit capable of comparing the magnitudes of plural data at a high speed. This device has an inverter circuit group containing one or more inverter circuits formed by neuron MOS transistors; means for applying to a first input gate of the inverter circuit a first signal voltage which is common to the inverters belonging to the foregoing inverter circuit group; means for applying predetermined second signal voltage to one or more second input gates other than the first input gate of the inverter; and means for detecting the variation of the output voltage in at least one inverter circuit of the inverter circuit group due to the variation with time of either the first or the second signal voltage or both, and for applying positive feedback to given inverters of the inverter circuit group according to the detection.

    IONEN IMPLANTIERUNGSGERÄT
    68.
    发明公开
    IONEN IMPLANTIERUNGSGERÄT 失效
    离子注入机

    公开(公告)号:EP0722181A4

    公开(公告)日:1997-01-08

    申请号:EP94924392

    申请日:1994-08-19

    申请人: OHMI TADAHIRO

    IPC分类号: H01J37/317 H01L21/265

    CPC分类号: H01J37/3171 H01J2237/0213

    摘要: This invention aims at providing an ion implanter adapted to reduce metal impurity contamination. An ion implanter for introducing predetermined impurities into a semiconductor substrate by irradiating the semiconductor substrate with an accelerated ion beam, characterized in that the portion of a member positioned behind, with respect to a direction of advance of the ion beam, the semiconductor substrate which is irradiated with the ion beam is formed out of material containing at least one of the semiconductor constituting the semiconductor substrate, an oxide of this semiconductor and a nitride thereof as a main component; or coated on an outer surface of the same portion of the member with the material. An ion implanter characterized in that it is formed so that a member positioned behind, with respect to a direction of advance of an ion beam, a semiconductor substrate is not irradiated with the ion beam.

    GENERATOR.
    69.
    发明公开
    GENERATOR. 失效
    发电机。

    公开(公告)号:EP0658950A4

    公开(公告)日:1995-11-29

    申请号:EP94908199

    申请日:1993-08-10

    申请人: OHMI TADAHIRO

    发明人: OHMI TADAHIRO

    摘要: This invention aims at providing a generator which is capable of producing large electric power at a low cost without substantially using fossil fuel and without contaminating the global environment, and which can be used instead of a thermal power generating machine. The present invention is characterized in that a solution consisting of a solvent which does not dissociate itself, and a substance added to and dissociating in the solvent, is held in a container having an inner corrosion resisting and insulating surface, an anode of a small work function and a cathode of a large work function being immersed in a mutually opposed state in this solution. The present invention is characterized in that it has a container having an inner corrosion resisting and insulating surface, a solution held in an atmospheric air-isolated state in the interior of the container and consisting of a liquid of an anhydrous hydrogen fluoride and water added thereto, an anode consisting of a material having corrosion resistance and a small work function and a cathode consisting of a material having corrosion resistance and a large work function which are immersed in a mutually opposed state in the solution, and a heat application means.

    摘要翻译: 本发明的目的在于提供一种发电机,该发电机能够以实质上不使用化石燃料且不污染地球环境的低成本产生大的电力,并且能够代替火力发电机使用。 本发明的特征在于,由不溶解的溶剂和溶剂中添加和解离的物质组成的溶液被保持在具有内部耐腐蚀和绝缘表面的容器中,小型工件的阳极 功能和大功函数的阴极在该溶液中以相互对置的状态浸入。 本发明的特征在于,它具有一个具有内部耐腐蚀和绝缘表面的容器,一个在容器内部保持在大气空气隔离状态的溶液,该溶液由加入了无水氟化氢和水的液体组成 由具有耐腐蚀性和小功函数的材料构成的阳极和由具有耐腐蚀性和大功函数的材料构成的阴极以及热施加装置以互相相对的状态浸入溶液中。

    WELDING METHOD AND WELDED STRUCTURE FOR FORMING PASSIVATED CHROMIUM OXIDE FILM ON WELD
    70.
    发明公开
    WELDING METHOD AND WELDED STRUCTURE FOR FORMING PASSIVATED CHROMIUM OXIDE FILM ON WELD 失效
    焊结构以及一种用于制造钝化CHROMOXIDSCHICHTES在焊接程序

    公开(公告)号:EP0692336A4

    公开(公告)日:1995-10-20

    申请号:EP94904321

    申请日:1994-01-14

    申请人: OHMI TADAHIRO

    发明人: OHMI TADAHIRO

    摘要: This invention provides a welding method capable of forming on a weld of the material to be welded and in the vicinity thereof in the step of welding a passivated chromium oxide film an outer surface of which has excellent corrosion resisting, a capability of substantially preventing the adsorption of water onto the outer surface, and a capability of permitting water, even when it is adsorbed onto the surface, to be removed simply with low energy; and a welded structure having the same film. A welding method for forming a passivated chromium oxide film on a weld of each material to be welded, consisting of the steps of forming a chromium-containing film at the end of the material which has on its outer surface a passivated oxide film formed by thermal treatment and containing chromium as the main component, setting face to face with each other the ends of the materials thus coated, and welding these ends, whereby a passivated oxide film containing chromium oxide as the main component which has a high corrosion resistance and which does not substantially provide outgassing can be formed on the outer surface of the weld.