公开(公告)号：EP1213953A4

公开(公告)日：2004-10-06

申请号：EP00950063

申请日：2000-08-11

申请人： DAISHODENSHI KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  MURAKAMI HIDETOSHI

IPC分类号： H05K3/46

CPC分类号： H05K3/4611 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/4913

摘要： A method and apparatus for manufacturing a multiplayer printed wiring board where the variation in the plate thickness and misregistration are eliminated by eliminating resin flow. The method for manufacturing a multiplayer printed wiring board by stacking a conductive foil or a conductor clad laminate sheet for the outer layer, a prepreg (5), and a conductor clad laminate sheet for the inner layer and then curing the prepreg (5) by hot press is characterized in that impurities are removed from the surface of the conductive foil or the conductor clad laminate sheet for outer layer, the prepreg (5), and the conductor clad laminate sheet for the inner layer by blowing gas (13) thereto before the hot press.

公开(公告)号：EP1429380A4

公开(公告)日：2009-07-15

申请号：EP02760759

申请日：2002-08-28

申请人： ZEON CORP ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  JIMBO T ,  MURAKAMI T

IPC分类号： H01L21/00 ,  H01L21/673

CPC分类号： H01L21/67303 ,  H01L21/67306 ,  H01L21/67313 ,  H01L21/67316 ,  H01L21/6732 ,  H01L21/67323 ,  H01L21/67326 ,  H01L21/6733 ,  H01L21/67353 ,  H01L21/67359 ,  H01L21/67386 ,  Y10T428/13 ,  Y10T428/1303 ,  Y10T428/1352 ,  Y10T428/1359 ,  Y10T428/1386 ,  Y10T428/139

摘要： A container for a precision substrate, which has at least one component formed from a thermoplastic resin, characterized in that it satisfies the following characteristics [1] and [2]: [1] when a flow of an ultra-high pure argon gas impurity content: 1 ppb or less is continuously contacted with the container with a flow rate of 1.2 L/min, the argon gas has a moisture content of 30 ppb per 1 cm2 of the surface area of the component 30 min after the start of contacting [2] when the container is placed in air at 100ringC, the amount of the organic materials in the air which is increased in the period of 300 min. is 150 ng or less per 1 g of the weight of the component. The container can satisfy the requirement of low staining for a container for a precision substrate.

公开(公告)号：EP1666645A4

公开(公告)日：2009-01-07

申请号：EP04747456

申请日：2004-07-07

申请人： ADMAP INC ,  MITSUI SHIPBUILDING ENG ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  SANO SUMIO

IPC分类号： C30B29/36 ,  H01L21/04 ,  H01L21/304 ,  H01L21/306 ,  H01L21/314 ,  H01L21/336 ,  H01L29/16 ,  H01L29/78

CPC分类号： H01L21/02052 ,  C30B29/36 ,  H01L21/3148 ,  H01L29/1608 ,  Y10T428/31

摘要： A silicon carbide product is disclosed which is characterized by having a surface with a metal impurity concentration of not more than 1×10 11 (atoms/cm 2 ). Also disclosed are a method for producing such a silicon carbide product and a method for cleaning a silicon carbide product. A silicon carbide having such a highly cleaned surface can be obtained by cleaning it with a hydrofluoric acid, a hydrochloric acid, or an aqueous solution containing a sulfuric acid and a hydrogen peroxide solution. The present invention provides a highly cleaned silicon carbide, and thus enables to produce a semiconductor device which is free from consideration on deterioration in characteristics caused by impurities. Further, when the silicon carbide is used in a unit for semiconductor production or the like, there is such an advantage that an object processed in the unit can be prevented from suffering an adverse affect of flying impurities.

摘要翻译： 公开了一种碳化硅产品，其特征在于具有不大于1×10 11（原子/ cm 2）的金属杂质浓度的表面。 还公开了制造这种碳化硅产品的方法和清洁碳化硅产品的方法。 通过用氢氟酸，盐酸或含有硫酸和过氧化氢溶液的水溶液进行清洗，可以得到具有高度清洁表面的碳化硅。 本发明提供了一种高度清洁的碳化硅，因此能够制造出不考虑由杂质引起的特性劣化的半导体器件。 此外，当碳化硅用于半导体生产等的单元中时，具有能够防止在该单元中加工的物体遭受飞散杂质的不利影响的优点。

公开(公告)号：EP1637859A4

公开(公告)日：2007-02-14

申请号：EP04745748

申请日：2004-06-10

申请人： FUJIKIN KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SUGIYAMA KAZUHIKO ,  HINO SHOICHI ,  TAKAHASHI EIJI ,  SAEGUSA MAKOTO ,  IKEDA NOBUKAZU ,  NISHINO KOUJI ,  DOHI RYOUSUKE ,  UENOYAMA TOYOMI ,  SUGITA KATSUYUKI

IPC分类号： G01L19/02 ,  G01L19/00 ,  G01L19/04

CPC分类号： G01L19/02 ,  G01L9/065 ,  G01L19/0023 ,  G05D7/0635

公开(公告)号：EP1398826A4

公开(公告)日：2006-09-06

申请号：EP02738770

申请日：2002-06-19

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  GOTO TETSUYA

IPC分类号： H01L21/31 ,  C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： Installed in a processing vessel (22) is a mounting block (24) on which a semiconductor wafer (W) is mounted. Microwaves, which are generated by a microwave generator (76), are introduced into a processing vessel (22) through a planar antenna member (66). The planar antenna member (66) has a plurality of slits (84) arranged along a plurality of circumferences, the circumferences forming non-concentric circles. The plasma density distribution in the radial direction of the planar antenna member (66) becomes uniform.

公开(公告)号：EP1238942A4

公开(公告)日：2005-07-06

申请号：EP00931707

申请日：2000-06-05

申请人： FUJIKIN KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KAWADA KOUJI ,  IKEDA NOBUKAZU ,  MORIMOTO AKIHIRO ,  MINAMI YUKIO ,  TUBOTA KENJI ,  HONIDEN TERUO ,  HIRAI TOURU ,  KOMEHANA KATUNORI ,  HIRAO KEIJI

IPC分类号： B01J8/02 ,  B01J10/00 ,  B01J12/00 ,  C01B5/00

CPC分类号： B01J12/007 ,  B01J2219/00058 ,  B01J2219/00087 ,  B01J2219/00096 ,  C01B5/00

摘要： A reactor for moisture generation completely preventing hydrogen gas from being ignited, back fire to a gas feed source side from occurring, and a platinum coating catalyst layer from being peeled off inside a reactor main body for moisture generation so as to further increase the safety of the reactor for moisture generation and reduce a dead space of an internal space inside the reactor main body in order to further reduce the size of the reactor main body, wherein an inlet side reactor main body member (1) having a gas feed port (1a) and an outlet side reactor main body member (2) having a moisture gas outlet port (2a) are combined opposedly to each other, these both members are welded with each other so as to form a reactor main body A, a reflector is provided inside the internal space (V) of the reactor main body, a platinum coating catalyst layer (8) is formed on the inner wall surface of the outlet side reactor main body member (2), and hydrogen and oxygen fed from the gas feed port (1a) to the internal space (V) of the reactor main body A are brought into contact with the platinum coating film (8b) to activate its reactivity, whereby hydrogen and oxygen are reacted under noncombustion state so as to produce water.

公开(公告)号：EP1039372A4

公开(公告)日：2005-02-02

申请号：EP98961396

申请日：1998-12-17

申请人： ULTRACLEAN TECHNOLOGY RES INST ,  OHMI TADAHIRO ,  I & F INC

发明人： OHMI TADAHIRO ,  IMAI MAKOTO ,  NOZAWA TOSHIYUKI ,  FUJIBAYASHI MASANORI ,  KOTANI KOJI ,  SHIBATA TADASHI ,  NITTA TAKAHISA

IPC分类号： G06F7/00 ,  G06F7/48 ,  G06F7/50 ,  G06F7/506

CPC分类号： G06F7/4824 ,  G06F7/506

摘要： A semiconductor circuit for arithmetic operation, which uses a reduced circuit area and provides high-speed processing by restricting nonessentials. The semiconductor circuit comprises an arithmetic circuit (adders 1-3) and delay means (memory 4). The arithmetic circuit includes arithmetic units for operation on input data, and they operate on digits of input data in a period of operation time, and produce results of operation, together with data corresponding to a carry, if any. The output from the arithmetic circuit is delayed by one period of operation time through the delay means.

摘要翻译： 提供了一种用于算术处理的半导体电路和运算处理方法，其可以通过抑制浪费处理来提高处理数据的速率并减小电路的面积。 提供了一种用于计算输入数据的计算单元，该计算单元在计算时间单位内计算输入数字数据，并输出表示通过计算获得的结果的计算结果，并且如果在计算中产生进位，则计算电路（ 用于输出表示该进位的进位数据的加法器1-3）和用于将来自计算电路的计算结果延迟一个计算时间单位的延迟装置（存储器4）。

公开(公告)号：EP1001326A4

公开(公告)日：2004-11-17

申请号：EP99922553

申请日：1999-05-27

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KAGATSUME SATOSHI ,  IKEDA NOBUKAZU ,  NISHINO KOUJI ,  YOSHIKAWA KAZUHIRO ,  IDETA EIJI ,  DOHI RYOUSUKE ,  UNO TOMIO ,  YAMAJI MICHIO

IPC分类号： F17D1/00 ,  G05D7/06 ,  G05D16/20

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A gas supply equipment comprising a gas control valve (2), an orifice accommodating valve (9) provided downstream of the control valve (2), a pressure detector (3) provided between the control valve (2) and the orifice accommodating valve (9), an orifice (5) provided downstream of the valve mechanism of the orifice accommodating (9) and an arithmetic and control unit which calculates a flow rate as Qc = KP1 (K; constant) from a detected pressure P1 by the pressure detector (3) and outputs to the drive unit of the control valve (2) the difference between a flow rate instruction signal Qs and a calculated flow rate Qc as a control signal Qy.

公开(公告)号：EP0922667A4

公开(公告)日：2003-05-28

申请号：EP98924654

申请日：1998-06-12

申请人： FUJIKIN KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  MINAMI YUKIO ,  KAWADA KOJI ,  TANABE YOSHIKAZU ,  IKEDA NOBUKAZU ,  MORIMOTO AKIHIRO

IPC分类号： C01B5/00

CPC分类号： C01B5/00

摘要： Process for generating moisture for use in semiconductor manufacturing, the process comprising feeding hydrogen and oxygen into a reactor provided with a platinum-coated catalyst layer on an interior wall, thus enhancing the reactivity between hydrogen and oxygen by catalytic action and instantaneously reacting the reactivity-enhanced hydrogen and oxygen at a temperature below the ignition point to produce moisture without undergoing combustion at a high temperature, wherein the amount of unreacted hydrogen occurring in the generated moisture in starting up or terminating the moisture generating reaction is minimized and wherein undesired reactions such as undesired silicon oxide film coating are avoided. When the generation of moisture is started up by feeding hydrogen and oxygen into the reactor provided with a platinum-coated catalyst layer on the inside wall thereof, oxygen first starts to be fed and, some time after that, the supply of hydrogen is begun. In terminating the moisture generating operation by cutting off the supply of hydrogen and oxygen into the reactor, the feeding of hydrogen is first stopped and, some time after that, the supply of oxygen is shut off.

公开(公告)号：EP0931941A4

公开(公告)日：2003-05-21

申请号：EP98937820

申请日：1998-08-13

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KAGAZUME TETU ,  SUGIYAMA KAZUHIKO ,  FUKADA OSAMU ,  OZAWA SUSUMU ,  SATOU YOSHIHIRO ,  DOHI RYOUSUKE ,  UNO TOMIO ,  NISHINO KOUJI ,  FUKUDA HIROYUKI ,  IKEDA NOBUKAZU ,  YAMAJI MICHIO

IPC分类号： G01F1/40 ,  G05D7/01 ,  F15D1/08 ,  B23P15/16 ,  G01F1/42

CPC分类号： G01F1/40 ,  G05D7/0186

摘要： An orifice for use in pressure type flow rate control unit which can be manufactured easily and inexpensively, and which has a linear relationship between pressure P1 upstream of the orifice and the flow rate over a wide range of pressure ratio P2/P1 (where P1 is the pressure upstream of the orifice and P2 is the pressure downstream of same), with the flow rate characteristic relationship among a plurality of orifices being easily adjustable. More specifically, the orifice has a structure comprising a tapered inlet section (1) wherein one open end of a bottom hole (6) bored into a main body member (D) is cut into a shape like the mouthpiece of a trumpet, and a short drawn parallel part (2) continuing therefrom; and a short expanded tapered section (3) formed by expanding the diameter of the other open end of the bottom hole (6) and continuing from the drawn parallel part (2), and an expanded parallel part (4) continuing therefrom.