公开(公告)号：EP1429380A1

公开(公告)日：2004-06-16

申请号：EP02760759.7

申请日：2002-08-28

申请人： Zeon Corporation ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  JIMBO, T., c/o Zeon Corp., Res & Dev. Center ,  MURAKAMI, T., c/o Zeon Corp., Res & Dev. Center

IPC分类号： H01L21/68 ,  C08L5/00 ,  B29B13/06 ,  B29C45/00 ,  B65D85/86 ,  C08L65/00 ,  C08L101/00

CPC分类号： H01L21/67303 ,  H01L21/67306 ,  H01L21/67313 ,  H01L21/67316 ,  H01L21/6732 ,  H01L21/67323 ,  H01L21/67326 ,  H01L21/6733 ,  H01L21/67353 ,  H01L21/67359 ,  H01L21/67386 ,  Y10T428/13 ,  Y10T428/1303 ,  Y10T428/1352 ,  Y10T428/1359 ,  Y10T428/1386 ,  Y10T428/139

摘要： A container for precision substrate having one or more component formed by molding a thermoplastic resin, characterized in that the component satisfies characteristics [1] and [2] below. [1] When being brought to contact ultra high purity argon gas (impurity concentration: 1 ppb or less) at 25°C having a flow rate of 1.2 L/min., a water amount in said argon gas after 300 minutes is 30 ppb or less per a surface area 1 cm 2 of the component. [2] When being placed in the air at 100°C, an increase amount of organics in the air in 300 minutes is 150 ng or less per weight 1 g of the component. According to the container, demands for low contamination can be satisfied.

摘要翻译： 一种用于通过模制热塑性树脂形成的具有一种或多种组分的精密基材的容器，其特征在于，该组分满足以下特征Ä1Ü和Ä2Ü。 Ä1Ü当接触流量为1.2升/分钟的25℃的超高纯度氩气（杂质浓度：1ppb以下）时，300分钟后的氩气中的水量为30ppb以下 每个表面积1厘米2的组分。 Ä2Ü当放置在100℃的空气中时，300分钟内空气中有机物的增加量为每重量150纳克1g组分。 根据容器，可以满足低污染的要求。

公开(公告)号：EP0820030B1

公开(公告)日：2003-07-02

申请号：EP96907743.7

申请日：1996-04-01

申请人： SHIBATA, Tadashi ,  OHMI, Tadahiro

发明人： SHIBATA, Tadashi ,  OHMI, Tadahiro

IPC分类号： G06G7/12 ,  G06G7/26

CPC分类号： G06G7/26

摘要： A semiconductor operational circuit capable of instantaneously processing in parallel a large quantity of information. The semiconductor operational circuit executes a predetermined operation of a first signal train of signals A1, A2, ..., AN-1, AN comprising N signals and a second signal train of signals B1, B2, ..., BM-1, BM (where N and M are positive integers) comprising M signals. The circuit includes a plurality of first operational circuits for executing a predetermined operation of Ai and Bi+n (where i is a positive integer and n is an integer and 1

公开(公告)号：EP1306751A1

公开(公告)日：2003-05-02

申请号：EP01936862.0

申请日：2001-06-06

申请人： Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  MORIMOTO, Tatsuo c/o TOHOKU UNIVERSITY ,  NAKADA, Akira c/o TOHOKU UNIVERSITY ,  SUGAWA, Shigetoshi c/o TOHOKU UNIVERSITY

IPC分类号： G06F9/06 ,  G06F11/00

CPC分类号： G06F9/44505 ,  G06F9/3897

摘要： Configuration management information having circuit configuration information for altering a circuit configuration of an FPGA (12) is stored in a memory (13), the configuration management information according to information related to an instruction group, which is supplied by a configuration management unit (11) from the outside via a signal line group (14), is read from the memory (13), and the circuit configuration of the FPGA (12) is altered according to the read configuration management information to execute processing of the instruction group so that information processing by software is replaced by information processing by hardware in real time, which increases execution speed of information processing and shortens verification time of software, enabling software development in a shorter period and with higher efficiency.

摘要翻译： 具有用于改变FPGA的电路结构的电路配置信息的配置管理信息（12）被存储在存储器（13），其由配置管理单元提供的配置管理信息雅丁到信息有关的指令组，所有（11 ）从经由信号线组的外侧（14）从存储器（13），并且FPGA的（电路结构12读出）被改变雅丁到读取配置管理信息执行该指令组的处理，从而确实 通过软件的信息处理是由信息处理通过实时，这增加了信息处理的执行速度，缩短软件验证时间，使软件开发在更短的时间和效率更高的硬件更换。

公开(公告)号：EP1079394A1

公开(公告)日：2001-02-28

申请号：EP99913705.2

申请日：1999-04-19

申请人： Kabushiki Kaisha Ultraclean Technology Research Institute ,  Ohmi, Tadahiro ,  Shibata, Tadashi

发明人： OHMI, Tadahiro ,  SHIBATA, Tadashi ,  WEE, Keng Hoong ,  YONEZAWA, Takemi ,  NOZAWA, Toshiyuki ,  NITTA, Takahisa, Kabushiki Kaisha Ultraclean

IPC分类号： G11C16/02

CPC分类号： G11C11/5642 ,  G11C11/5621 ,  G11C11/5628 ,  G11C27/005 ,  G11C2211/5613

摘要： The present invention is intended to provide a semiconductor memory circuit that can store analog and many-valued data at high speed and with a high degree of accuracy. The semiconductor memory circuit is characterized by comprising a memory cell in which analog and many-valued signals can be written and stored, a readout circuit having an output terminal which outputs the values stored in the memory cell to the outside as voltages, a comparator having an output terminal which outputs a write end signal when the output terminal voltage of the readout circuit equals to a predetermined voltage, a write voltage controlling circuit having an output terminal which outputs an output voltage corresponding to the analog and many-valued voltage values inputted to an input terminal as a writing voltage of the memory cell, and a write voltage switching circuit having a function which supplies the output voltage of the write voltage controlling circuit to the memory cell and stops to supply the output voltage of the write voltage controlling circuit to the memory cell when the write end signal is outputted to the output terminal of the comparator.

摘要翻译： 本发明旨在提供一种能够以高速度和高精度存储模拟和多值数据的半导体存储器电路。 半导体存储器电路的特征在于包括：存储单元，其中可以写入和存储模拟和多值信号;读出电路，具有将存储在存储单元中的值作为电压输出到外部的输出端;比较器，具有 输出端子，当读出电路的输出端子电压等于预定电压时输出写入结束信号;写入电压控制电路，具有输出端子，输出端子输出对应于模拟输入电压值和输出的多值电压值的输出电压; 作为所述存储单元的写入电压的输入端子和具有将所述写入电压控制电路的输出电压提供给所述存储单元并停止以将所述写入电压控制电路的输出电压提供给所述存储单元的功能的写入电压切换电路， 当写结束信号被输出到比较器的输出端子时存储单元。

公开(公告)号：EP1065709A1

公开(公告)日：2001-01-03

申请号：EP99949372.9

申请日：1999-10-22

申请人： Kabushiki Kaisha Ultraclean Technology Research Institute ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  HIRAYAMA, Masaki ,  NITTA, Takahisa K. K. Ultraclean Tech. Res.Inst.

IPC分类号： H01L21/3065 ,  H01L21/205

CPC分类号： H01L21/67213 ,  H01L21/67167 ,  H01L21/6719

摘要： The present invention relates to a semiconductor manufacturing apparatus, capable of uniform processing on the substrate, occupying a small floor area for installation, and presenting a good maintainability.
The semiconductor manufacturing apparatus of the present invention, is composed of a vacuum vessel, wherein at least one substrate stage is provided on said vacuum vessel bottom plate; a cylinder is installed surrounding said substrate stage; the gap between said cylinder and said vacuum vessel top plate or bottom plate is made variable by lifting/lowering said cylinder; at least one cylinder lifting/lowering mechanism per one said cylinder is provided, in order to separate a space inside said cylinder composing a processing chamber for processing said substrate surface from a space outside said cylinder composing a transport chamber for transferring said substrate; said transport chamber is provided with a substrate conveyer mechanism for transferring said substrate between said processing chamber and said transport chamber through said gap; said processing chamber is provided with a processing chamber gas inlet and a processing chamber gas outlet; and said transport chamber is provided with a transport chamber gas inlet and a transport chamber gas outlet.

摘要翻译： 半导体制造装置技术领域本发明涉及一种半导体制造装置，能够对基板进行均匀的加工，占地面积小，安装性好，维修性好。 本发明的半导体制造装置由真空容器构成，其中在所述真空容器底板上设置有至少一个基板台; 围绕所述基底台安装圆柱体; 所述气缸和所述真空容器顶板或底板之间的间隙通过提升/降低所述气缸而变得可变; 提供每一个所述气缸的至少一个气缸提升/降低机构，以便分离构成处理室的所述气缸内的空间，用于处理所述衬底表面与构成用于传送所述衬底的传送室的所述气缸外部的空间; 所述输送室设置有基板输送机构，用于通过所述间隙在所述处理室和所述输送室之间转移所述基板; 所述处理室设置有处理室气体入口和处理室气体出口; 并且所述输送室设置有输送室气体入口和输送室气体出口。

公开(公告)号：EP0983791A1

公开(公告)日：2000-03-08

申请号：EP98955950.5

申请日：1998-11-27

申请人： Nippon Sanso Corporation ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  ISHIHARA, Yoshio, Nippon Sanso Corp.

IPC分类号： B01J3/02 ,  C01B23/00 ,  H01L21/285 ,  H01L21/205 ,  H01L21/203 ,  C23C16/50 ,  C23F4/00

CPC分类号： C01B23/001 ,  B01D53/00 ,  B01D2256/18 ,  B01D2258/0216 ,  B01J3/00 ,  C23C16/4412 ,  Y02C20/30

摘要： A process and an apparatus for recovering a noble gas, which can recover a noble gas exhausted from a noble gas employing system efficiently and also can supply the noble gas of a predetermined purity to the noble gas employing system and which can reduce consumption of the noble gas. In the process and apparatus for recovering a noble gas, when a noble gas contained in an exhaust gas exhausted from a noble gas employing system operated under reduced pressure is recovered, switching between introduction of the exhaust gas to a recovery system and exhaustion of the exhaust gas to an exhaust system is carried out under reduced pressure, and this switching operation is carried out depending on the content of impurity components contained in the exhaust gas or on the running state of the noble gas employing system.

公开(公告)号：EP0725160A1

公开(公告)日：1996-08-07

申请号：EP92923995.2

申请日：1992-11-20

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro

IPC分类号： C23C8/14 ,  C23C8/18 ,  C22C38/44 ,  C23C8/02

CPC分类号： C23C8/18 ,  C23C8/02

摘要： A method of readily forming a passive oxide film based on chromium oxide characterized by subjecting stainless steel to electrolytic polishing, composite electrolytic polishing and fluidized abrasive polishing, baking the steel thus treated in an inactive gas to remove moisture from its surface, and heat treating the resultant steel at 300 to 600 °C in a gaseous atmosphere comprising hydrogen or a mixture thereof with an inactive gas and containing less than 4 ppm of oxygen or less than 500 ppb of moisture. An oxidized stainless steel characterized by comprising a stainless steel having a crystal grain number of 6 or above and, formed on the surface thereof, a passive oxide film based on chromium oxide, wherein the oxide film has a thickness of 5 nm or above and the atomic ratio of chromium to iron on the outermost layer of the film is 1 or above.

摘要翻译： 的膜基于通过对不锈钢进行电解抛光，复合电解研磨和流化磨料抛光，烘烤如此处理过的在惰性气体，以从其表面除去水分的钢，和热处理为特征的氧化铬随手形成钝化氧化物的方法 在300〜600℃在气态气氛与惰性气体包括氢气或它们的混合物，并且含有小于4ppm的氧气或湿气的小于500个ppb的所得钢。 氧化不锈钢通过包括具有6个或以上，并且形成在其表面上，钝化的氧化为基础的薄膜上氧化铬，worin的氧化膜的厚度为5纳米或以上的和晶粒数的不锈钢，其特征 铁铬的原子比的膜的最外层上是1或以上。

公开(公告)号：EP0722181A1

公开(公告)日：1996-07-17

申请号：EP94924392.7

申请日：1994-08-19

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  TOMITA, Kazuo, Dept. Elect. Faculty of Engineering

IPC分类号： H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/0213

摘要： An object of the present invention is to provide an ion implanter in which contamination of metallic impurities is reduced.
The ion implanter for introducing specified impurities into said semiconductor substrate by irradiating an ion beam accelerated against the semiconductor substrate is characterized in that a portion of a member positioned at a place backward from said semiconductor substrate and irradiated by the ion beam when viewed from a direction in which the ion beam advanced is made of semiconductor constituting said semiconductor substrate or a material containing at least an oxide or a nitride thereof as a main ingredient, or the surface thereof is covered with said material.
Also the ion implanter is characterized in that a member positioned at a place backward from said semiconductor substrate, when viewed from a direction in which the ion beam advances, is not irradiated by said ion beam.

摘要翻译： 本发明的目的是提供一种离子注入机，其中金属杂质的污染减少。 用于通过照射加速抵靠半导体衬底的离子束将特定杂质引入所述半导体衬底的离子注入机的特征在于，当从所述半导体衬底的方向观察时，位于所述半导体衬底的后方并被离子束照射的部件的一部分 其中离子束前进由构成所述半导体衬底的半导体或至少包含其氧化物或氮化物的材料作为主要成分或其表面被所述材料覆盖。 此外，离子注入机的特征在于，当从离子束前进的方向观察时，位于从所述半导体衬底向后的位置的构件不被所述离子束照射。

公开(公告)号：EP0689736A1

公开(公告)日：1996-01-03

申请号：EP94904744.0

申请日：1994-01-20

申请人： SHIBATA, Tadashi ,  OHMI, Tadahiro

发明人： SHIBATA, Tadashi ,  OHMI, Tadahiro ,  AU, Rita, Dep. of Electr. Faculty of Engineering

IPC分类号： H03K19 ,  H03K17 ,  H03M1

CPC分类号： H03K17/063 ,  H03K17/04163 ,  H03K19/09425 ,  H03M1/361

摘要： A semiconductor circuit which realizes a source follower having a voltage gain equal to one, a decrease in the time necessary for the source follower to reach its full output voltage. Furthermore, the multiple-valued or analog output voltage can be easily converted to a binary-digital form with this circuit. This semiconductor circuit comprising at least an MOS transistor. A multiple-valued or analog data line is connected to the inputs of multiple-valued comparators, the outputs of said comparators are coupled capacitively to the input gate of a source-follower circuit, and the output of said source-follower circuit is fedback to the data line.

公开(公告)号：EP0671871A1

公开(公告)日：1995-09-13

申请号：EP94908129.3

申请日：1993-08-13

申请人： TAKASAGO NETSUGAKU KOGYO KABUSHIKI KAISHA ,  HAMAMATSU PHOTONICS K.K. ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  INABA, Hitoshi 202 ,  IKEDO, Tomoyuki

IPC分类号： H05F3/06 ,  H01L21/02 ,  H01L21/68 ,  A01G7/00 ,  E04H5/02

CPC分类号： H05F3/06

摘要： An apparatus and method for producing positive and negative ions and/or electrons in a gas of any atmosphere without producing dust, a method and structure for neutralizing a charged body in a short period of time and for completely preventing static electricity from being generated, and various apparatuses and structures, such as a conveyor, wet bench, and clean room, which use the neutralizing method and structure. The gaseous ion producing apparatus produces positive and negative ions and/or electrons in a gas by irradiating, with electromagnetic waves in a soft X-ray region, the gas under a high pressure, atmospheric pressure, or reduced pressure. In the neutralizing structure an X-ray unit is arranged at an appropriate place to apply the electromagnetic waves in a soft X-ray region to the atmospheric gas surrounding a charged body.

摘要翻译： 用于生产任何气氛的气体中的正，负离子和/或电子，而不会产生灰尘，在很短的时间周期和用于完全呼叫的产生防止静电的中和带电体的方法和结构的设备和方法，以及 各种装置和结构，检查作为输送机，湿式工作台，以及洁净室，其中使用中和方法和结构。 气态离子生成装置通过高压，常压，或减压下，在软X-射线照射区域，用电磁波，气体产生正和负的离子和/或电子的气体英寸 在X射线单元的中和结构在被布置在适当的位置在软X射线区施加电磁波对周围带电体的气氛气体。