公开(公告)号：EP1024965A4

公开(公告)日：2000-09-20

申请号：EP98944639

申请日：1998-09-01

申请人： ARCH SPEC CHEM INC

发明人： LOVE M LEE JR ,  HONDA KENJI

IPC分类号： C11D3/00 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3213 ,  B44C1/22 ,  H01L21/00

CPC分类号： C11D7/06 ,  C11D3/0073 ,  C11D7/105 ,  C11D7/265 ,  C11D7/3245 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/425 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/32135

摘要： A process of treating a substrate having photoresist applied thereto, comprising the steps of: (a) removing said photoresist from said substrate by a method selected from the group consisting of photoresist stripping, plasma etch residue cleaning, or a combination thereof; and (b) rinsing said substrate with a non-corrosive rinsing composition comprising: (1) water; and (2) one or more water-soluble corrosion inhibitors selected from the group consisting essentially of hydroxylamine, at least one hydroxylammonium salt, at least one water-soluble organic acid, at least one amino acid, and combinations thereof.

公开(公告)号：EP0889506A3

公开(公告)日：1999-03-10

申请号：EP98112292.2

申请日：1998-07-02

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Engelhardt, Manfred, Dr. ,  Schwarzl, Siegfried, Dr.

IPC分类号： H01L21/311 ,  C23F1/00

CPC分类号： H01L28/55 ,  C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32135 ,  H01L21/32139 ,  H01L28/60

摘要： Erfindungsgemäß wird ein Verfahren zur Strukturierung zumindest einer zu strukturierenden Schicht, bereitgestellt, das die folgenden Schritte umfaßt: die zu strukturierende Schicht wird auf einer Unterlage bereitgestellt, eine Maske wird auf der zu strukturierenden Schicht bereitgestellt, die zu strukturierende Schicht wird trockengeätzt, wobei zumindest ein reaktiver Stoff vorgesehen ist. Das erfindungsgemäße Verfahren ist dadurch gekennzeichnet, daß während der Trockenätzung der reaktive Stoff und das Material der Maske und/oder der Unterlage an der Oberfläche der Maske und/oder der Unterlage zu einer nicht flüchtigen Verbindung reagieren.

公开(公告)号：EP0837497A3

公开(公告)日：1998-06-10

申请号：EP97307549.2

申请日：1997-09-25

申请人： Applied Materials, Inc.

发明人： Kumar, Ajay ,  Chinn, Jeffrey ,  Deshmukh, Shashank C. ,  Jiang, Weinan ,  Guenter, Rolf Adolf ,  Minaee, Bruce ,  Wiltse, Mark

IPC分类号： H01L21/321

CPC分类号： H01L21/32135

摘要： An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.

公开(公告)号：EP0823726A1

公开(公告)日：1998-02-11

申请号：EP97111878.1

申请日：1997-07-11

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Hintermaier, Frank, Dr. ,  Mazure-Espejo, Carlos, Dr.

IPC分类号： H01L21/321 ,  C23F4/00 ,  H01L21/311 ,  H01L21/3205

CPC分类号： C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  H01L21/31116 ,  H01L21/32135

摘要： Aufgrund mangelnder Anisotropie bei der Gasphasenätzung von Metallen, Metalloxiden und deren Gemische können häufig nur schräge Ätzprofile erreicht werden, die häufig dem Ätzprofil einer rein physikalischen Ätzung entsprechen. Grund dafür ist, daß zumeist nichtflüchtige Metallverbindungen durch die Gasphasenätzung entstehen. Durch die Beimischung von Komplexbildnern, wie Kohlenmonoxid oder Phosphin bzw. Phosphinderivate, werden anstatt der schwerflüchtigen Metallsalze leichtflüchtige Metallkomplexe erzeugt, so daß die Anisotropie der Ätzung stark erhöht werden kann.

摘要翻译： 金属，金属氧化物和它们的混合物的等离子支持的等离子体蚀刻包括使用蚀刻气体（混合物）。 在蚀刻过程中，提供了一种复杂的前者。 复杂的前者与蚀刻气体（混合物）混合，或在蚀刻气体（混合物）中原位产生。 复杂的是前者CO，膦或膦衍生物; 或1,3-二酮类，羧酸，二胺，多胺，二醚或聚醚。 惰性气体或氮气在蚀刻气体混合物。 惰性气体为Ar。 的卤素或卤素contg的。 化合物，E.G. 氯，溴，甲烷，乙烷，丙烷，在蚀刻气体混合物被提供。 氧，O 3，N 2 O，NO或NO 2中所述蚀刻气体混合物尤其提供爱。 的蚀刻速率和/或选择性由压力，气体混合物的组成，温度蚀刻，等离子体性能或原子的动能调整。 电极材料是铂，钯，铑，铱，钌，锇或Au，或它们的合金。 等离子体是在用于磁性辅助反应离子刻蚀的反应器中生产的，在三极管反应器或在低压，高离子流反应器。

公开(公告)号：EP0804804A2

公开(公告)日：1997-11-05

申请号：EP96931481.0

申请日：1996-09-06

申请人： ADVANCED MICRO DEVICES INC.

发明人： BELL, Scott

IPC分类号： H01L21

CPC分类号： H01L21/32135 ,  H01L21/32139

摘要： Pitting in active regions along the edges of a gate electrode when etching a composite comprising an anti-reflective coating on polysilicon is avoided by etching the anti-reflective coating with an etchant that forms a protective passivating coating on at least the sidewalls of the etched anti-reflective pattern and on the underlying polysilicon layer. Subsequently, anisotropic etching is conducted to remove the protective passivating coating from the surface of the polysilicon layer, leaving the etched anti-reflective pattern protected from the main polysilicon etch on at least its sidewalls by the passivating coating to prevent interaction. In another embodiment, the anti-reflective coating is etched without formation of a passivating coating, and the polysilicon layer subsequently etched with an etchant that forms a passivating coating.

公开(公告)号：EP0785572A3

公开(公告)日：1997-08-20

申请号：EP97100846.1

申请日：1997-01-21

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Yamanaka, Michinari

IPC分类号： H01L21/302

CPC分类号： H01L21/32135

摘要： In a dry etching method of aluminum (Al) alloy film comprising the steps of (1) forming an alloy (2) film of which a major component is Al on a semiconductor substrate (1), (2) forming a resist pattern (4) on the alloy film (2), and (3) dry etching the alloy film (2) using the resist pattern (4) as a mask with etching gas to which ammonia gas is added, a flow rate of the ammonia gas being set at between not less than half of a flow rate of the etching gas and not more than the flow rate of the etching gas. Improved fine pattern dry etching of Al alloy including Si and Cu is achieved.

摘要翻译： 在铝（Al）合金膜的干蚀刻方法中，包括以下步骤：（1）在半导体衬底（1）上形成主要成分为Al的合金（2）膜;（2）形成抗蚀剂图案（4） ）涂布在合金膜（2）上，和（3）使用抗蚀剂图案（4）作为掩模，用添加有氨气的蚀刻气体干蚀刻合金膜（2），设定氨气的流量 在不小于蚀刻气体的流量的一半和蚀刻气体的流量之间。 实现了包括Si和Cu的Al合金的改进的精细图案干法蚀刻。

公开(公告)号：EP0785572A2

公开(公告)日：1997-07-23

申请号：EP97100846.1

申请日：1997-01-21

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Yamanaka, Michinari

IPC分类号： H01L21/302

CPC分类号： H01L21/32135

摘要： In a dry etching method of aluminum (Al) alloy film comprising the steps of (1) forming an alloy (2) film of which a major component is Al on a semiconductor substrate (1), (2) forming a resist pattern (4) on the alloy film (2), and (3) dry etching the alloy film (2) using the resist pattern (4) as a mask with etching gas to which ammonia gas is added, a flow rate of the ammonia gas being set at between not less than half of a flow rate of the etching gas and not more than the flow rate of the etching gas. Improved fine pattern dry etching of Al alloy including Si and Cu is achieved.

摘要翻译： 在铝（Al）合金膜的干蚀刻方法中，包括以下步骤：（1）在半导体衬底（1）上形成主要成分为Al的合金（2）膜，（2）形成抗蚀剂图案（4） ）在合金膜（2）上，（3）使用抗蚀剂图案（4）作为掩模对合金膜（2）进行干法蚀刻，其中加入氨气的蚀刻气体，设定氨气流量 在不少于蚀刻气体的流速的一半以下且不大于蚀刻气体的流量。 实现了包括Si和Cu在内的Al合金的精细图案干法蚀刻。

公开(公告)号：EP0600664A2

公开(公告)日：1994-06-08

申请号：EP93309400.5

申请日：1993-11-25

申请人： SHARP KABUSHIKI KAISHA

发明人： Sakurai, Takehisa ,  Ujimasa, Hitoshi ,  Kawai, Katsuhiro ,  Ban,Atsushi ,  Kajitani, Masaru ,  Katayama, Mikio

IPC分类号： H01L21/321 ,  H01L21/336

CPC分类号： H01L29/66765 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32137

摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.

摘要翻译： 在根据本发明的用于选择性地蚀刻多层结构的第二硅层的方法中，第二硅层被选择性地蚀刻，所述第二硅层包括第一硅层和形成在第一硅层上并且掺杂有杂质的第二硅层， 包括氟利昂-14气体和选自氯化氢气体和氯气的气体的蚀刻气体。

公开(公告)号：EP0140755A3

公开(公告)日：1988-01-13

申请号：EP84401911

申请日：1984-09-26

申请人： FUJITSU LIMITED

发明人： Kisa, Toshimasa

IPC分类号： H01L21/306

CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136

摘要： @ A plasma processor for dry etching in a fabricating process for an integrated circuit semiconductor device comprises a plasma generating region (12) formed in a part of a waveguide through which microwave power is transmitted. An etchant gas is introduced into the plasma generating region and a plasma is generated by the microwave power applied thereto. The plasma generating region and the reacting region (4) are kept at a specific gas pressure by means of an evacuating device (17). The radicals (active etching species) react with a wafer (1) placed on a base plate (15) in the reacting region. According to the invention wafer (1) is etched by the etchant gas while being plated said gas blown out from holes (13) arranged in the base plate (15). With such a floating wafer processing method a higher processing rate and an improved etching uniformity can be obtained.

公开(公告)号：EP0098582A3

公开(公告)日：1986-05-07

申请号：EP83106553

申请日：1983-07-05

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ueno, Tsunehisa ,  Kamata, Yutaka ,  Miyazaki, Sinji

IPC分类号： G03F07/02

CPC分类号： H01L21/0274 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/30 ,  H01L21/312 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  Y10S438/952

摘要： A method for patterning a layer having a high reflectance includes directly forming on a layer (13) having a high reflectance a light-absorbing film (21) having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30% and forming a photosensitive material film (14) on the light-absorbing film (21). A selected region of the photosensitive material film (14) is irradiated with the exposing incident light, and the photosensitive material film (14) is developed to form a first pattern (14'). The light-absorbing film (21) is selectively etched using the first pattern (14') as a mask so as to form a second pattern (21'). Finally, the layer (13) having the high reflectance is selectively etched using the second pattern (21') as a mask.