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    ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS
    7.
    发明公开
    ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS 审中-公开
    ANTI REFLEX涂料组合物使用于带有低K介电材料中的应用

    公开(公告)号：EP1446700A2

    公开(公告)日：2004-08-18

    申请号：EP02729246.5

    申请日：2002-05-14

    Applicant: Brewer Science, Inc.

    Inventor： PULIGADDA, Rama ,  LAMB, James, E., III ,  FLAIM, Tony, D. ,  HUANG, Runhui ,  SHAO, Xie

    IPC: G03F1/00

    CPC classification number: G03F7/091 ,  Y10S438/952 ,  Y10T428/31511 ,  Y10T428/31525

    Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

    Improved fuse link structures through the addition of dummy structures
    9.
    发明公开
    Improved fuse link structures through the addition of dummy structures 失效
    Verbesserte StrukturenfürVerbindungssicherungen mittels des Zusatzes von Scheinstrukturen

    公开(公告)号：EP0746025A2

    公开(公告)日：1996-12-04

    申请号：EP96108177.5

    申请日：1996-05-22

    Applicant: SIEMENS AKTIENGESELLSCHAFT ,  International Business Machines Corporation

    Inventor： Mitwalsky, Alexander ,  Ryan, James Gardner

    IPC: H01L23/525

    CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  Y10S438/926 ,  Y10S438/952 ,  H01L2924/00

    Abstract: An improved etch behavior is promoted to generate vertical sidewalls for fuse links that will promote reliable and repeatable laser cutting of the fuse links. In one embodiment, dummy structures are added adjacent to fuse links in order to obtain the vertical sidewalls for reliable fuse deletion. The dummy structures form no part of the fuse or circuit structure but, because of the proximity of the dummy structures to the fuse links, vertical sidewalls are promoted in a reactive ion etch which is used to form the fuse array. In another embodiment, the vertical sidewalls of the fuse links are achieved in a damascene process in which grooves are formed in an oxide layer and filled with a metal. These grooves correspond to the fuse links and alternating dummy structures. Once filled, the surface is planarized using a chemical-mechanical process. The dummy structures provide reinforcement for the metallization (metal and dielectric film), maintaining the integrity of the metallization. In both embodiments, the vertical sidewalls and constant height of the resulting fuse links promote reliable laser cutting.

    Abstract translation: 促进改进的蚀刻行为以产生熔丝链的垂直侧壁，这将促进熔丝链的可靠和可重复的激光切割。 在一个实施例中，虚拟结构被添加到熔丝链附近，以便获得用于可靠熔丝缺失的垂直侧壁。 虚拟结构不构成保险丝或电路结构的一部分，但是由于虚设结构与熔丝链的接近，垂直侧壁在用于形成熔丝阵列的反应离子蚀刻中得到促进。 在另一个实施例中，熔丝链的垂直侧壁在镶嵌工艺中实现，其中凹槽形成在氧化物层中并用金属填充。 这些槽对应于熔断体和交替的虚拟结构。 一旦填充，使用化学 - 机械方法将表面平坦化。 虚拟结构为金属化（金属和电介质膜）提供加强，保持金属化的完整性。 在两个实施例中，所产生的熔断体的垂直侧壁和恒定的高度促进了可靠的激光切割。

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