公开(公告)号：EP2037506A1

公开(公告)日：2009-03-18

申请号：EP07116583.1

申请日：2007-09-17

申请人： Palo Alto Research Center Incorporated

发明人： Chua, Christopher L ,  Yang, Zhihong ,  Johnson, Noble M.

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L29/15 ,  H01S5/343

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02573 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/04 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3201

摘要： An optical semiconductor device such as a light emitting diode (60) is formed on a transparent substrate (62) having formed thereon a template layer (64), such as AIN, which is transparent to the wavelength of emission of the optical device. A variable period variable composition superlattice strain relief region (68,70) is provided over the template layer such that the composition of the strain relief region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the strain relief region may be tailored to provide a stepped or gradual Aluminum content from template (64) to active layer (72). Strain-induced cracking and defect density are reduced or eliminated.

摘要翻译： 在其上形成有对于光学器件的发射波长透明的诸如AIN的模板层（64）的透明基板（62）上形成诸如发光二极管（60）的光学半导体器件。 在模板层上提供可变周期可变组合物超晶格应变消除区域（68,70），使得应变消除区域的组成接近或匹配与其相邻的区域的组成。 例如，应变消除区域的Al含量可以被定制以从模板（64）到活性层（72）提供阶梯状或逐渐的铝含量。 应变诱发的裂纹和缺陷密度降低或消除。

公开(公告)号：EP2030243A1

公开(公告)日：2009-03-04

申请号：EP07784481.9

申请日：2007-06-19

申请人： Semisouth Laboratories, Inc.

发明人： MAZZOLA, Michael S.

IPC分类号： H01L29/15

CPC分类号： H01L21/8213 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78

摘要： A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.

公开(公告)号：EP2002481A1

公开(公告)日：2008-12-17

申请号：EP07753441.0

申请日：2007-03-19

申请人： Mears Technologies, Inc.

发明人： HUANG, Xiangyang ,  HALILOV, Samed ,  YIPTONG, Jean Augustin Chan Sow Fook ,  DUKOVSKI, Ilija ,  HYTHA, Marek ,  MEARS, Robert J.

IPC分类号： H01L29/15 ,  H01L29/66

CPC分类号： H01L29/158 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F1/401 ,  H01F1/405 ,  H01F10/193 ,  H01F10/3213 ,  H01F10/3268 ,  H01F41/302 ,  H01L29/152 ,  H01L29/66984

摘要： A spintronic device may include at least one superlattice and at least one electrical contact coupled thereto, with the at least one superlattice including a plurality of groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion having a crystal lattice, at least one non-semiconductor monolayer constrained within the crystal lattice of adjacent base semiconductor portions, and a spintronic dopant. The spintronic dopant may be constrained within the crystal lattice of the base semiconductor portion by the at least one non-semiconductor monolayer. In some embodiments, the repeating structure of a superlattice may not be needed.

摘要翻译： 自旋电子器件可以包括至少一个超晶格和与其耦合的至少一个电触点，其中至少一个超晶格包括多组层。 每组层可以包括限定具有晶格的基础半导体部分的多个堆叠的基础半导体单层，限制在相邻基础半导体部分的晶格内的至少一个非半导体单层以及自旋电子掺杂剂。 自旋电子掺杂剂可以通过至少一个非半导体单层被约束在基础半导体部分的晶格内。 在一些实施例中，超晶格的重复结构可能不是必需的。

公开(公告)号：EP1583161A4

公开(公告)日：2008-05-28

申请号：EP04700755

申请日：2004-01-08

申请人： JAPAN GOVERNMENT ,  IHI AEROSPACE CO LTD

发明人： HATA TOMONOBU ,  SASAKI KIMIHIRO ,  MORITA SHINICHI

IPC分类号： C04B41/81 ,  H01L35/26 ,  C03C17/09 ,  C23C14/58 ,  H01L21/203 ,  H01L21/324 ,  H01L29/06 ,  H01L29/15 ,  H01L29/161 ,  H01L35/34 ,  H01L49/00 ,  H01M14/00

CPC分类号： H01L35/26 ,  H01L35/34 ,  H01M14/00

摘要： A structurally gradient material comprising base material (1) and, provided thereon by coating, functional material (2), having been heat-treated with a desired temperature gradient in specified direction and region of the functional material provided on the base material. Thus, the functional material provided on the base material can have nonconventional useful capability and can realize nonconventional high performance without implementing "composition gradient" with respect to component concentration, oxide content, crystal structure, etc.

公开(公告)号：EP1374310A4

公开(公告)日：2008-02-20

申请号：EP02725158

申请日：2002-03-14

申请人： UNIV MASSACHUSETTS

发明人： TOUMINEN MARK T ,  RUSSELL THOMAS P ,  URSACHE ANDREI ,  BAL MUSTAFA

IPC分类号： B82B1/00 ,  G03F7/16 ,  H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01L21/8246 ,  H01L23/48 ,  H01L27/105 ,  H01L29/06 ,  H01L35/28 ,  H01L35/32 ,  H01L43/08 ,  H01L29/15 ,  H01L35/00

CPC分类号： H01J1/53 ,  B82Y10/00 ,  G03F7/164 ,  H01J1/3048 ,  H01J2201/30469 ,  H01L23/48 ,  H01L35/28 ,  H01L35/32 ,  H01L43/12 ,  H01L51/0595 ,  H01L2924/0002 ,  H01L2924/00

摘要： Pathways to rapid and reliable fabrication of three-dimensional nanostructures are provided. Simple methods are described for the production of well-ordered, multilevel nanostructures. This is accomplished by patterning block copolymer templates with selective exposure to a radiation source. The resulting multi-scale lithographic template can be treated with post-fabrication steps to produce multilevel, three-dimensional, integrated nanoscale media, devices, and systems.

公开(公告)号：EP1872404A1

公开(公告)日：2008-01-02

申请号：EP06748992.2

申请日：2006-03-29

申请人： Mears Technologies, Inc.

发明人： MEARS, Robert, J. ,  STEPHENSON, Robert, John

IPC分类号： H01L29/15

CPC分类号： B82Y10/00 ,  H01L21/823807 ,  H01L21/8252 ,  H01L21/8254 ,  H01L27/0605 ,  H01L29/152 ,  H01L29/861 ,  H01L29/868

摘要： A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The superlattice may further include at least one pair of oppositely-doped regions therein defining at least one semiconductor junction.

公开(公告)号：EP1505698A3

公开(公告)日：2006-04-26

申请号：EP04253951.0

申请日：2004-06-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Lee, Won-seok ,  Ha, Kyoung-ho ,  Kwak, Joon-seop ,  Paek, Ho-sun ,  Lee, Sung-nam ,  Sakong, Tan, B-502 Stbobo 2-cha,

IPC分类号： H01L29/15 ,  H01S5/323 ,  H01L33/00 ,  H01S5/32

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/06 ,  H01L33/32 ,  H01S2301/173

摘要： Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.

摘要翻译： 提供了具有超晶格半导体层的半导体器件及其制造方法。 半导体器件包括超晶格半导体层，其中由不同材料形成的第一材料层和第二材料层交替堆叠。 在第一材料层和第二材料层中形成多个孔，形成超晶格结构，并且用相邻材料层的材料填充孔。 提供的超晶格结构通过在保持预定的光限制特性的同时将电荷转移穿过第一材料层和第二材料层中的孔来降低驱动电压。

公开(公告)号：EP1644983A1

公开(公告)日：2006-04-12

申请号：EP04785968.1

申请日：2004-06-28

申请人： RJ Mears, LLC

发明人： MEARS, Robert, J. ,  YIPTONG, Jean Augustin Chan Sow Fook ,  HYTHA, Marek ,  KREPS, Scott, A. ,  DUKOVSKI, Ilija

IPC分类号： H01L29/15 ,  H01L29/10

CPC分类号： H01L29/1054 ,  H01L21/823807 ,  H01L29/155 ,  H01L29/7833

摘要： A semiconductor device includes a substrate, and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel that, in turn, includes a plurality of stacked groups of layers. The MOSFET may also include source and drain regions laterally adjacent the superlattice channel, and a gate overlying the superlattice channel for causing transport of charge carriers through the superlattice channel in a parallel direction relative to the stacked groups of layers. Each group of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice channel may have a higher charge carrier mobility in the parallel direction than would otherwise occur.

公开(公告)号：EP1009034A4

公开(公告)日：2002-11-27

申请号：EP98910573

申请日：1998-03-23

申请人： LI BINGHUI

发明人： LI BINGHUI

IPC分类号： H01L29/88 ,  H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  H01L33/34 ,  H01L33/40 ,  H01S5/34 ,  H01L29/15 ,  H01L29/24 ,  H01L29/885 ,  H01L33/00 ,  H03B7/08 ,  H01S3/19

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L29/88 ,  H01S5/34

摘要： A semiconductor quantum oscillation device which can produce an oscillation on the basis of a novel injection principle of carriers includes a structure made of a multilayer material and a means for applying a voltage to said structure. The multilayer structure has a tunneling injection region and a pair of oscillation regions which are provided in both side of the tunneling injection region and contact with it. The means for applying a voltage applies a voltage to the pair of oscillation regions and causes the valence band electron in tunneling region to tunnel interbandly into the conduct band, so as to introduce electrons and holes which are to generate a quantum oscillation motion and to cause a far-infrared radiation. This can fully utilize the electromagnetic wave between the high end of millimetric wave and the low end of the far-infrared.

公开(公告)号：EP0863554B1

公开(公告)日：2002-09-25

申请号：EP98103825.0

申请日：1998-03-04

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Tanabe, Mitsuru

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/15 ,  H01L21/338 ,  H01L21/20

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/155 ,  H01L29/205 ,  H01L29/7784