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    Semiconductor device having superlattice semiconductor layer and method of manufacturing the same
    3.
    发明公开
    Semiconductor device having superlattice semiconductor layer and method of manufacturing the same 有权
    Halbleitervorrichtung mitÜbergitterund Herstellungsverfahren

    公开(公告)号：EP1505698A3

    公开(公告)日：2006-04-26

    申请号：EP04253951.0

    申请日：2004-06-30

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Lee, Won-seok ,  Ha, Kyoung-ho ,  Kwak, Joon-seop ,  Paek, Ho-sun ,  Lee, Sung-nam ,  Sakong, Tan, B-502 Stbobo 2-cha,

    IPC分类号： H01L29/15 ,  H01S5/323 ,  H01L33/00 ,  H01S5/32

    CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/06 ,  H01L33/32 ,  H01S2301/173

    摘要： Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.

    摘要翻译： 提供了具有超晶格半导体层的半导体器件及其制造方法。 半导体器件包括超晶格半导体层，其中由不同材料形成的第一材料层和第二材料层交替堆叠。 在第一材料层和第二材料层中形成多个孔，形成超晶格结构，并且用相邻材料层的材料填充孔。 提供的超晶格结构通过在保持预定的光限制特性的同时将电荷转移穿过第一材料层和第二材料层中的孔来降低驱动电压。

    Semiconductor optoelectronic device
    6.
    发明公开
    Semiconductor optoelectronic device 有权
    Optoelektronische Halbleitervorrichtung

    公开(公告)号：EP1411559A2

    公开(公告)日：2004-04-21

    申请号：EP03254704.4

    申请日：2003-07-28

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Lee, Sung-nam ,  Ha, Kyoung-ho ,  Sakong, Tan Samsung Advanced Institute Technology

    IPC分类号： H01L33/00

    CPC分类号： H01S5/20 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/34333

    摘要： A highly efficient semiconductor optoelectronic device is provided. The semiconductor optoelectronic device includes an active layer, an upper waveguide layer provided on the active layer and a lower waveguide layer provided under the active layer, an upper cladding layer provided on the upper waveguide layer and a lower cladding layer provided under the lower waveguide layer, a substrate supporting a deposited structure of the lower cladding layer, the lower waveguide layer, the active layer, the upper waveguide layer, and the upper cladding layer, and upper and lower optical confinement layers provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer, respectively, and having an energy gap that is smaller than those of the upper and lower waveguide layers but greater than that of the active layer.

    摘要翻译： 半导体光电子器件具有在有源层和上波导层之间以及分别在有源层和下波导层之间设置的上和下光限制层。 光学限制层之间的能隙小于波导层的能隙，但是大于有源层的能隙。 在上波导层和上光限制层之间插入电子阻挡层。 光限制层是氮化物基材料，并掺杂有硅或镁。 光学限制层的厚度大于100（优选为100-500）A°。