摘要:
Systems and methods for low power magnetic field generation for atomic sensors using electro-permanent magnets (201-1, 201-2). In one embodiment, a method for magnetic field generation for an atomic sensor comprises: laser cooling a sample of atoms in a chamber (220); and trapping the sample of atoms in a magneto-optical trap within the chamber by applying an atom trapping field across the sample of atoms using at least one pair of electro-permanent magnet units (201-1, 201-2).
摘要:
Devices (113), systems, and methods for ion trapping with integrated electromagnets are described herein. One device (113) includes a plurality of electrodes (114, 414) configured to trap an ion above a surface of the device (113), a medial coil (102) and a plurality of peripheral coils (104-1 to 104-4), each positioned at a respective radial angle associated with the medial coil (102), wherein the medial coil (102) is configured to generate a first magnetic field having a first orientation, and wherein the peripheral coils (104-1 to 104-4) are configured to generate a second magnetic field having a second orientation that opposes the first orientation.
摘要:
In one embodiment, a chip scale atomic sensor is provided. The chip scale atomic sensor includes a body that defines at least one sensing chamber. The body includes a thermal isolation die mounted to the body. The thermal isolation die is disposed in a location that communicates with the at least one sensing chamber. The thermal isolation die includes a substrate defining a frame portion and an isolated portion and a plurality of tethers mechanically coupling the isolated portion of the substrate to the frame portion. The thermal isolation die also includes an atomic source mounted on the isolated portion of the substrate, and a heating element mounted on the isolated portion and configured to heat the atomic source.
摘要:
The invention relates to an alkali-metal vapour cell, especially for an atomic clock, and to its manufacturing process. The alkali-metal vapour cell (2) is able to be associated with a laser (3) for emitting an external input laser beam (5a) and a photodetector (4) for receiving an external output laser beam (5e), and comprises a housing (6) having an upstream optical window (9) and a downstream optical window (10) and forming an optical cavity (11) filled with an alkali-metal vapour such as a caesium-comprising vapour, and micro-optical means arranged in the optical cavity (11) and comprising an upstream optical reflector (14) and a downstream optical reflector (15) for reflecting the laser beam (5), which reflectors are inclined relative to each other, the upstream reflector (14) being inclined relative to the plane (P) of the upstream window (9) and to the axis of the input laser beam (5) so that the external input laser beam (5a) passes through the upstream window (9) in order to form an internal input laser beam (5b), the latter being reflected by the upstream reflector (14) and deviated towards the downstream reflector (15) so as to form an internal intermediate laser beam (5c) that is reflected by the downstream reflector (15) and deviated towards the downstream window (10) so as to form an internal output laser beam (5d), the internal output (5d) laser beam (5) passing through the downstream window (10) in order to form the external output laser beam (5e).
摘要:
Methods and apparatus to monitor GPS/GNSS atomic clocks are disclosed. An example method includes establishing a measured difference between an atomic frequency standard (AFS) and a monitoring device. The method also includes modeling an estimated difference model between the AFS and the monitoring device, and computing a residual signal based on the measured difference and the estimated difference model. In addition, the method includes analyzing, by a first detector, the residual signal at multiple thresholds, each of the thresholds having a corresponding persistency defining the number of times a threshold is exceeded before one or more of a phase jump, a rate jump, or an acceleration error is indicated. Furthermore, the method includes analyzing, by a second detector, a parameter of the estimated difference model at multiple thresholds, each of the thresholds having a corresponding persistency defining the number of times a drift threshold is exceeded before a drift is indicated.
摘要:
A vertical cavity surface emitting laser (100) includes: a substrate (10); a laminated body which is provided over the substrate; and a resin layer (70) which is provided on at least a side surface of the laminated body, wherein the laminated body at least includes a first mirror layer (20) provided over the substrate (10), an active layer (30) provided over the first mirror layer, and a second mirror layer (40) provided over the active layer, in a plan view, a length of the laminated body (2) in a first direction is greater than a length of the laminated body in a second direction orthogonal to the first direction, and in the plan view, a length of the resin layer in the first direction is greater than a length of the resin layer in the second direction. The non-circular shape of the mesa (2) and lateral oxidation of the mirror layers with high Al content (60,62) being part of the mesa (2) together with the non-circular shape of the resin layer results in a stress induced preferred polarisation of the VCSEL emission.
摘要:
A surface emitting laser element includes plural surface emitting lasers provided on a substrate. Each of the plural surface emitting lasers includes a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region. The wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer. A thickness of the wavelength adjustment region is approximately an odd multiple of a wavelength of emitted light divided by four. A thickness of the phase adjustment layer is approximately an even multiple of the wavelength of the emitted light divided by four. A thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers.
摘要:
Systems and methods for a wafer scale atomic clock are provided. In at least one embodiment, a wafer scale device comprises a first substrate; a cell layer joined to the first substrate, the cell layer comprising a plurality of hermetically isolated cells, wherein separate measurements are produced for each cell in the plurality of hermetically isolated cells; and a second substrate joined to the cell layer, wherein the first substrate and the second substrate comprise electronics to control the separate measurements, wherein the separate measurements are combined into a single measurement.
摘要:
Systems and methods for a cold atom frequency standard are provided herein. In certain embodiments, a cold atom microwave frequency standard includes a vacuum cell, the vacuum cell comprising a central cylinder, the central cylinder being hollow and having a first open end and a second open end; a first end portion joined to the first open end; and a second end portion joined to the second open end, wherein the first end portion, the central cylinder, and the second end portion enclose a hollow volume containing atoms, the first end portion and the second end portion configured to allow light to enter into the hollow volume. The cold atom microwave frequency standard also includes a cylindrically symmetric resonator encircling the central cylinder, wherein the resonator generates a microwave field in the hollow volume at the resonant frequency of the atoms.
摘要:
A surface emitting laser element includes plural surface emitting lasers provided on a substrate. Each of the plural surface emitting lasers includes a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region. The wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer. A thickness of the wavelength adjustment region is approximately an odd multiple of a wavelength of emitted light divided by four. A thickness of the phase adjustment layer is approximately an even multiple of the wavelength of the emitted light divided by four. A thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers.