公开(公告)号：EP1255291A3

公开(公告)日：2010-09-29

申请号：EP02076457.7

申请日：2002-04-15

申请人： Lumileds Lighting U.S., LLC

发明人： Stockman, Stephen A. ,  Rudaz, Serge L. ,  Misra, Mira S.

IPC分类号： H01L21/38 ,  H01L33/32

CPC分类号： H01L33/325 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3245

摘要： One embodiment of a process that forms low resistivity III-V nitride (e.g., GaN) p-type layers removes all sources of hydrogen (typically NH 3 ) in the epitaxial growth chamber during the post growth cool-down process. By eliminating sources of hydrogen during the cool-down process, any additional passivation of the acceptor impurities (e.g., Mg) by hydrogen atoms during cool-down is avoided. After the cool-down process, the wafer is annealed at a relatively low temperature (e.g., below 625°C) to remove nearly all of the hydrogen from the Mg-doped layers. The anneal can take place at a low temperature since the diffusivity of H in the p-type GaN layers is much higher than in i-type GaN layers. If the p-type layers are used in an LED, since the low temperature anneal does not degrade the GaN layers' crystallinity, the intensity of the LED's emitted light is not decreased by the anneal process. In other embodiments, the Mg-doped GaN layers are capped with an n-type GaN layer or any n-type semiconductor layer during epitaxial growth, prior to cool-down, to block the in-diffusion of H during the cool-down period. The n-type cap is then removed prior to the low-temperature anneal step. In other embodiments, the Mg-doped GaN layers are made slightly p-type after the cool-down but prior to annealing. This may be done using various processes.

公开(公告)号：EP1256987A3

公开(公告)日：2010-05-26

申请号：EP02076622.6

申请日：2002-04-23

申请人： Lumileds Lighting U.S., LLC

发明人： Bhat, Jerome Chandra ,  Steigerwald, Daniel A.

IPC分类号： H01L33/20 ,  H01L33/46 ,  H01L33/40 ,  H01L33/32

CPC分类号： H01L33/46 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/14

摘要： In one embodiment of the present invention, a highly reflective dielectric stack is formed on the mesa wall of a flip-chip LED. The layers of the dielectric stack are selected to maximize reflection of light incident at angles ranging from -10 to 30 degrees, relative to the substrate. The dielectric stack is comprised of alternating low refractive index and high refractive index layers. In some embodiments, the LED is a III-nitride device with a p-contact containing silver, the dielectric stack layer adjacent to the mesa wall has a low refractive index compared to GaN, and the low refractive index layers are Al 2 O 3 .

公开(公告)号：EP1157428B1

公开(公告)日：2008-09-17

申请号：EP00984049.7

申请日：2000-12-08

申请人： Lumileds Lighting U.S., LLC

发明人： GRILLOT, Patrick, N. ,  CHEN, Eugene, I. ,  HUANG, Jen-Wu ,  STOCKMAN, Stephen, A.

IPC分类号： H01L33/00

CPC分类号： H01L33/305 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/06

摘要： An LED and a method of fabricating the LED which utilize controlled oxygen (O) doping to form at least one layer of the LED having an O dopant concentration which is correlated to the dominant emission wavelength of the LED. The O dopant concentration is regulated to be higher when the LED has been configured to have a longer dominant emission wavelength. Since the dominant emission wavelength is dependent on the composition of the active layer(s) of the LED, the O dopant concentration in the layer is related to the composition of the active layer(s). The controlled O doping improves the reliability while minimizing any light output penalty due to the introduction of O dopants. In an exemplary embodiment, the LED is an AlGalnP LED that includes a substrate, an optional distributed Bragg reflector layer, an n-type confining layer, an optional n-type set-back layer, an active region, an optional p-type set-back layer, a p-type confining layer and an optional window layer. In a preferred embodiment, the active region includes a multiplicity of active layers, where each active layer is 125 Angstroms thick or less and the active layers are separated from each other by barrier layers whose composition is Al0.5In0.5P and whose thickness is 100 Angstroms or less. In a preferred embodiment, both the p-type confining layer and the p-type set-back layer are doped with a controlled amount of O, depending on the dominant emission wavelength of the LED. In addition to the O doping, the p-type confining layer of the LED is preferably doped with a high amount of p-type dopants, such as Mg, Zn, C or Be. During high temperature thermal processing, this high concentration of p-type dopants then partially diffuses into the active region, resulting in a heavily p-type doped active region.

公开(公告)号：EP1258929A3

公开(公告)日：2008-09-10

申请号：EP02076696.0

申请日：2002-04-29

申请人： Lumileds Lighting U.S., LLC

发明人： Bhat, Jerome Chandra ,  Ludowise, Michael Joseph ,  Steigerwald, Daniel A.

IPC分类号： H01L33/00

CPC分类号： H01L33/56 ,  H01L21/563 ,  H01L24/14 ,  H01L24/17 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/05599

摘要： In accordance with the invention, a difference in index of refraction is created at the mesa wall of a III-nitride flip chip light emitting device. The step in index of refraction reflects much of the light incident on the mesa wall back into the device where it can be usefully extracted. In some embodiments, a solder wall on the submount or a high index gel coating the light emitting device and the submount creates a sealed gap between the light emitting device and the submount. The gap is filled with a material having a low index of refraction. In other embodiments, a high index material covers the substrate of the light emitting device, and a low index material fills the gap between the submount and the light emitting device.

公开(公告)号：EP1145282B8

公开(公告)日：2008-08-13

申请号：EP00966877.3

申请日：2000-09-25

申请人： Philips Lumileds Lighting Company LLC

发明人： MUELLER, Gerd, O. ,  MUELLER-MACH, Regina, B. ,  LOWERY, Christopher, H.

IPC分类号： H01L33/00 ,  C09K11/84

CPC分类号： H01L33/504 ,  C09K11/7718 ,  C09K11/7731 ,  H01L33/502 ,  Y02B20/181

摘要： The present invention relates to a tri-color lamp for generating white light. In particular, the invention relates to a phosphor mixture comprising two phosphors having host sulfide materials that can absorb radiation emitted by a light emitting diode, particularly a blue LED. This arrangement provides a mixing of three light sources - light emitted from the two phosphors and unabsorbed light emitted from the LED. The phosphors can contain the same dopant, such as a rare earth ion, to allow matching of the phosphors in relation to the LED emitted radiation. Power fractions of each of the light sources can be varied to achieve good color rendering. The present invention also relates to an alternative to a green LED comprising a single green phosphor that absorbs radiation from a blue LED. A resulting device provides green light of high absorption efficiency and high luminous equivalent values.

摘要翻译： 本发明涉及一种用于产生白光的三色灯。 具体而言，本发明涉及包含具有主体硫化物材料的两种磷光体的磷光体混合物，所述主体硫化物材料可吸收由发光二极管，特别是蓝色LED发射的辐射。 这种配置提供了三种光源的混合 - 从两种荧光粉发出的光和从LED发出的未吸收的光。 磷光体可以包含相同的掺杂剂，例如稀土离子，以允许与LED发射的辐射相关的磷光体匹配。 每个光源的功率分数可以变化以实现良好的显色。 本发明还涉及包括吸收来自蓝色LED的辐射的单一绿色磷光体的绿色LED的替代方案。 所得到的器件提供了高吸收效率和高发光等效值的绿光。

公开(公告)号：EP1901486A1

公开(公告)日：2008-03-19

申请号：EP06120768.4

申请日：2006-09-15

申请人： Koninklijke Philips Electronics N.V.

发明人： The designation of the inventor has not yet been filed

IPC分类号： H04L12/28

CPC分类号： H04W74/08 ,  H04W8/26 ,  H04W74/004 ,  H04W88/10

摘要： A wireless network (1) comprises basic service sets (6, 7) and a distribution system (8). Each of the basic service sets (6, 7) comprises stations (2, 3) and stations (4, 5), respectively. Thereby, data is moved between their basic service sets (6, 7) and said distribution system (8) via access points (10, 11), which are also stations (3, 4). A medium access control architecture incorporating a distributed coordination function as an access method is provided. Thereby, a normal mode and a mesh mode are provided. Thereby, normal mode is used to transmit data between stations (2, 3; 4, 5) within each of the basic service sets (6; 7). In mesh mode, data is transmitted between the access points (10, 11). To priorize transmission within the distribution system (8) the stations (2, 5), which are not mesh devices, are silence during mesh mode. Therefor, one of the access points (10, 11) sends a request to send in which the address of the access point (10, 11) is used as both the transmitter address and the receiver address of this request to send.

摘要翻译： 无线网络（1）包括基本服务组（6,7）和分配系统（8）。 每个基本服务组（6,7）分别包括站（2,3）和站（4,5）。 从而，经由也是站（3,4）的接入点（10,11），数据在其基本服务组（6,7）和所述分配系统（8）之间移动。 提供了一种结合分布式协调功能作为访问方法的媒体访问控制架构。 由此，提供了正常模式和网格模式。 因此，正常模式用于在每个基本服务组（6; 7）内的站（2,3,4,5）之间传送数据。 在网状模式下，在接入点（10,11）之间传送数据。 为了优化在分配系统（8）内的传输，不是网格设备的站（2,5）在网格模式期间是静默的。 为此，其中一个接入点（10,11）发送一个发送请求，将该接入点（10,11）的地址用作发送地址和发送请求的接收者地址。

公开(公告)号：EP1901485A1

公开(公告)日：2008-03-19

申请号：EP06120763.5

申请日：2006-09-15

申请人： Koninklijke Philips Electronics N.V.

发明人： The designation of the inventor has not yet been filed

IPC分类号： H04L12/28

CPC分类号： H04W74/04

摘要： A wireless network (1) comprises mesh devices and non-mesh devices. A medium access control architecture incorporates at least a point coordination function as an access method, wherein the point coordination function starts a contention-free period (30) with a beacon (32) so that a non-polled transmission by the non-mesh devices is prevented. Further, the mesh devices are enable to communicate during the contention-free period (30). Hence, communication between the mesh devices is priorisized so that a high reliability is achieved and utilization of the wireless network (1) is optimized.

摘要翻译： 无线网络（1）包括网状设备和非网格设备。 媒体访问控制架构至少包括作为访问方法的点协调功能，其中所述点协调功能利用信标（32）开始无竞争周期（30），使得非网格设备的非轮询传输 被阻止 此外，网格设备能够在无竞争时段（30）期间进行通信。 因此，网状设备之间的通信是优先的，从而实现高可靠性并优化无线网络（1）的利用。

公开(公告)号：EP1459599B1

公开(公告)日：2008-02-27

申请号：EP02781532.3

申请日：2002-11-15

申请人： Koninklijke Philips Electronics N.V.

发明人： MIN, Young-Kee ,  CLAUBERG, Bernd ,  HONTELE, Bertrand, J., E.

IPC分类号： H05B33/08

CPC分类号： H05B33/0818 ,  B60Q1/2607 ,  B60Q1/2696 ,  B60Q1/44 ,  H05B33/0845

公开(公告)号：EP1046196B1

公开(公告)日：2008-01-16

申请号：EP99948820.8

申请日：1999-09-17

申请人： Koninklijke Philips Electronics N.V. ,  Philips Intellectual Property & Standards GmbH

发明人： BÖRNER, Herbert, F. ,  BUSSELT, Wolfgang ,  JÜSTEL, Thomas ,  NIKOL, Hans ,  RONDA, Cornelis, R. ,  HARBERS, Gerard

IPC分类号： H01L33/00 ,  F21K7/00

CPC分类号： H05B33/0857 ,  C09K11/584 ,  C09K11/642 ,  C09K11/7718 ,  C09K11/7734 ,  F21K9/233 ,  F21K9/64 ,  F21V7/22 ,  F21V9/30 ,  F21Y2107/00 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  H05B33/0821 ,  Y02B20/383 ,  Y10S362/80 ,  H01L2924/00

摘要： A lighting system includes at least two light-emitting diodes each emitting, in operation, visible light in a preselected wavelength range. A converter converts part of the visible light emitted by one of the diodes into visible light in a further wavelength range so as to optimize the color rendition of the lighting system. The diodes include a blue light-emitting diode and a red light-emitting diode. Further, the converter includes a luminescent material for converting a portion of the light emitted by the blue light-emitting diode into green light.

公开(公告)号：EP1194918B1

公开(公告)日：2007-08-15

申请号：EP01925349.1

申请日：2001-02-21

申请人： Koninklijke Philips Electronics N.V.

发明人： CHANG, Chin ,  PENG, Shaomin

IPC分类号： G09G3/00

CPC分类号： H05B33/0821 ,  H05B33/0803 ,  Y10S362/80

摘要： A matrix structure-based light-emitting diode array includes a plurality of input resistances connected in parallel to one terminal of a current source, and a plurality of output resistances connected in parallel to another terminal of a current source. Light-emitting diodes are then used to connect each of the input resistances to each of the output resistances. Arranged as such, no two light-emitting diodes are connected in parallel and, as such, the failure of any one light-emitting diode does not extinguish any of the other light-emitting diodes.