利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

29 条记录 (耗时 0.011 秒)

    Electric image recording camera
    4.
    发明公开
    Electric image recording camera 失效
    Elektrische Bildaufzeichnungskamera。

    公开(公告)号：EP0104407A2

    公开(公告)日：1984-04-04

    申请号：EP83108143.5

    申请日：1983-08-17

    申请人： HITACHI, LTD.

    发明人： Sato, Kazuhiro ,  Izumita, Morishi ,  Nagahara, Shusaku

    IPC分类号： H04N5/91

    CPC分类号： H04N5/2353 ,  H04N1/40056

    摘要： An electric image recording camera includes an imaging device (2) which converts optical information received through a lens (1) into an electric signal, and a recorder (5, 6) which records the information of one frame read out from the imaging device (2). An optical shutter (15) can arbitrarily set for a period of time for the imaging device (2) to receive the optical information. Means (19) are provided for stopping the read-out operation of the imaging device (2) while the optical shutter (15) is open, whereby the exposure time can be varied at will.

    摘要翻译： 电摄像机包括将通过透镜（1）接收的光学信息转换为电信号的成像装置（2）和记录从成像装置读出的一帧的信息的记录器（5,6） 2）。 光学快门（15）可以任意设置成像装置（2）接收光学信息的一段时间。 提供了用于在光学快门（15）打开时停止成像装置（2）的读出操作的装置（19），从而可以随意改变曝光时间。

    Method of manufacturing a semiconductor device having a self-aligned gate electrode
    5.
    发明公开
    Method of manufacturing a semiconductor device having a self-aligned gate electrode 失效
    制造具有自对准栅极电极的集成电路的方法。

    公开(公告)号：EP0101960A1

    公开(公告)日：1984-03-07

    申请号：EP83107520.5

    申请日：1983-07-29

    申请人： HITACHI, LTD.

    发明人： Miyazaki, Masaru ,  Takahashi, Susumu ,  Kohashi, Takahiro ,  Ueyanagi, Kiichi

    IPC分类号： H01L21/28 ,  H01L21/31

    CPC分类号： H01L29/66871 ,  H01L21/0272

    摘要： In manufacturing a field effect transistor, a pattern which has a wider upper layer (11, 18) and a narrower lower layer (12, 19) is formed at a gate electrode position. Using the pattern as a mask, first (2) and second (3) impurity regions are formed on both the sides of a gate region (4) by ion implantation. Subsequently, at least the lower layer (12, 15) is buried in a material (13, 16), such as an organic high polymer material, having a selectivity in etching characteristics with respect to the pattern material. After removing the lower layer (12, 19), an electrode material (15, 71) is embedded in the resulting hole (14) so as to form a gate electrode (7, 81).

    Semiconductor memory and method for fabricating the same
    6.
    发明公开
    Semiconductor memory and method for fabricating the same 失效
    Halbleiterspeicher und Herstellungsverfahren。

    公开(公告)号：EP0085988A2

    公开(公告)日：1983-08-17

    申请号：EP83101243.0

    申请日：1983-02-09

    申请人： Hitachi, Ltd.

    发明人： Sunami, Hideo ,  Kure, Tokuo ,  Kawamoto, Yoshifumi

    IPC分类号： H01L27/10 ,  H01L21/82

    CPC分类号： G11C11/404 ,  H01L27/10829

    摘要： A semiconductor memory having a capacitor (1) formed by utilizing a groove (17) formed in a semiconductor substrate (10) and an insulated gate field effect transistor (2) and suppressing expansion of a depletion layer (201, 202) from the groove, and a method for fabricating the same are disclosed.
    An area occupied by each memory cell can be made very small and a distance between the memory cells can also be made very small, accordingly, high density integration is facilitated.

    摘要翻译： 一种具有通过利用形成在半导体衬底（10）中的凹槽（17）和绝缘栅场效应晶体管（2）形成的电容器（1）的半导体存储器，并且抑制耗尽层（201,202）从凹槽 ，及其制造方法。 可以使由每个存储单元占据的区域非常小，并且存储单元之间的距离也可以非常小，因此便于高密度集成。