摘要:
A plasma device for uniform processing of large-size wafers. The device comprises a processing container (4) that is a bottomed cylinder with an upper opening covered with a quartz plate (8), the cylinder including a processing stage (10) for holding a wafer (W); a microwave device (50) for supplying TE11-mode microwave; a cylindrical waveguide (52) including a waveguide space, connected with the microwave device (50) on one end, and extending toward the quartz plate (8); a radial waveguide box (54) including a waveguide space, connected with the other end of the waveguide (52), spreading radially outward in the shape of a flange, and falling toward the quartz board (8) to serve as a side wall; and a disk-like slot antenna (60) arranged along the quartz board (8) to cover a lower opening of the waveguide box (54). A circular polarization converter (56) can be provided to rotate microwave on the axis of the cylindrical waveguide (52) and send it to the waveguide box (54).
摘要:
A plasma device for uniform processing of large-size wafers. The device comprises a processing container (4) that is a bottomed cylinder with an upper opening covered with a quartz plate (8), the cylinder including a processing stage (10) for holding a wafer (W); a microwave device (50) for supplying TE11-mode microwave; a cylindrical waveguide (52) including a waveguide space, connected with the microwave device (50) on one end, and extending toward the quartz plate (8); a radial waveguide box (54) including a waveguide space, connected with the other end of the waveguide (52), spreading radially outward in the shape of a flange, and falling toward the quartz board (8) to serve as a side wall; and a disk-like slot antenna (60) arranged along the quartz board (8) to cover a lower opening of the waveguide box (54). A circular polarization converter (56) can be provided to rotate microwave on the axis of the cylindrical waveguide (52) and send it to the waveguide box (54).
摘要:
In the plasma processor, the microwaves generated from a microwave generator (86) are led to a plane antenna (62), which in turn introduces exponentially attenuating microwaves into a container (22) that processes an object (W) in plasma. Microwave absorption means (96) provided in the circumference of the plane antenna (62) absorbs microwaves propagating from the center of the plane antenna (62) and suppresses the reflection. As a result, the microwaves reflected in the circumference of the plane antenna (62) and returned to the center are decreased to some degree, and the electromagnetic field distribution of the microwave becomes uniform.
摘要:
A plasma device includes a slot antenna (30) for supplying a high frequency electromagnetic field (F) supplied through a feeding part into a processing vessel (11). The feeding part has a cavity (35) for forming a resonator and converting the fed high frequency electromagnetic field (F) into a rotating electromagnetic field and supplying the rotating electromagnetic field to the slot antenna (30).
摘要:
In a plasma processing system, microwaves generated by a microwave generator (86) are guided to a plane antenna (62) to introduce the microwaves, which are attenuated exponentially, into a processing vessel (22) in which an object to be processed (W) is subjected to a plasma process. A microwave absorbing means (96) is disposed in a peripheral portion of the plane antenna (62) to absorb the microwaves propagating from a central portion of the plane antenna and to control the amount of reflected microwave. Thus the amount of the microwaves reflected toward the central portion of the plane antenna (62) by a peripheral portion of the plane antenna (62) is reduced to some extent so that electromagnetic field intensity is distributed uniformly.
摘要:
A plasma device, comprising a slot antenna (30) for feeding a high frequency electromagnetic field (F) fed through a feeding part into a processing container (11), the feeding part further comprising a cavity (35) forming an oscillator and converting the fed high frequency electromagnetic field (F) to a rotating electromagnetic field and feeding the rotating electromagnetic field to the slot antenna (30).
摘要:
A plasma processing apparatus is provided. The plasma processing apparatus can generate a uniform plasma in a processing container to perform a uniform processing on even a large-diameter wafer. The apparatus includes a processing container 4 shaped to be a cylinder with a bottom and accommodating a mounting table 10 for mounting a wafer W thereon, a silica plate 8 for covering an upper opening of the processing container 4 in an airtight manner, a microwave supplier 50 for supplying a microwave in TE11 mode and a cylindrical waveguide 52 having one end connected to the microwave supplier 50 to extend toward the silica plate 8 and also having an interior waveguide space. The apparatus further includes a radial waveguide box 54 connected to the other end of the cylindrical waveguide 52. The radial waveguide box 54 is shaped to extend from the other end of the cylindrical waveguide 52 radially outward in the form of a flange and successively extend toward a lid body downward as a sidewall to define an interior waveguide space. The apparatus further includes a disc-shaped slot antenna 60 arranged along the silica plate 8 to cover an opening at the lower end of the radial waveguide box 54 and have a plurality of slots 101, a circularly polarized wave converter 56 disposed in the cylindrical waveguide 52 between the microwave supplier 50 and the radial waveguide box 54 to rotate the TE11-mode microwave provided from the supplier 50 about an axis of the cylindrical waveguide 52 and send the rotating microwave to the radial waveguide box 54.