摘要:
The invention concerns a method consisting in: a) producing a first element (A) comprising a first silicon body (1a) whereof the main surface is coated, in succession, with a buffer layer (2a) of germanium or of an alloy of germanium and silicon and with a thin silicon film (3a); b) producing a second element (B), comprising a silicon body (1b) whereof a main surface is coated with a thin silicon oxide film (2b); c) linking the first element (A) with the second element (B) such that the thin silicon film (3a) of the first element (A) is in contact with the thin silicon oxide film (2b) of the second element (B); and d) eliminating the buffer layer (2a) to recuperate the silicon substrate comprising a buried thin silicon oxide film, and a reusable silicon substrate. The invention is useful for making microelectronic devices such as CMOS and MOSFET devices.
摘要:
The invention concerns a spectroscopic ellipsometer comprising a light source (1) emitting an optical beam, a polarizer (2) arranged on the path of the optical beam emitted by the light source, a sample holder (9) receiving the optical beam from the polarizer output, a polarisation analyser (3) designed to be traversed by the beam reflected by the sample to be analysed, a detection set which receives the beam from the analyser output and which comprises a monochromator (5) and a photodetector (4), means (6) for processing the signal in said detection set output, which include an electronic counter (13). Cooling means (12) maintain the detection set at a temperature lower than room temperature, minimising the noise of the detector so as to be constantly in the condition of minimum photon noise. The optimal measuring condition of the ellipsometer is reached by minimising all the sources of noise (lamps, detection, ambient noise).
摘要:
Le procédé comprend : la gravure dans un substrat semiconducteur (2), d'au moins une tranchée (3) de largeur et de profondeur prédéterminées ; le dépôt sur le substrat et dans la tranchée d'un empilement de couches successives et alternées de Si 1-X Ge X (0 le polissage mécano-chimique pour obtenir une hétérostructure finale ayant une surface principale supérieure plane au niveau de laquelle affleurent les couches de l'empilement déposées dans la tranchée. Application à la microélectronique
摘要:
The invention concerns a saturable absorbent structure comprising a stack of layers forming a succession of quantum wells and barriers and a plurality of recombination centres distributed in said stack. The invention is characterised in that the recombination centres are made of a material such that they define with the materials of the stack one or several energy levels in the forbidden band of energy defined between the conduction band and the valence band of the wells of the stack.