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12 条记录 (耗时 0.014 秒)

    LOW POWER MAGNETIC ANOMALY SENSOR
    1.
    发明公开
    LOW POWER MAGNETIC ANOMALY SENSOR 审中-公开
    低功耗传感器磁异常

    公开(公告)号：EP1307756A1

    公开(公告)日：2003-05-07

    申请号：EP01950633.6

    申请日：2001-06-27

    申请人： Integrated Magnetoelectronics Corporation

    发明人： SPITZER, Richard ,  TOROK, E., James

    IPC分类号： G01R33/04 ,  G01R33/02 ,  H03K3/30 ,  G01C17/28

    CPC分类号： B82Y25/00 ,  G01R33/04 ,  G01R33/093

    摘要： A transpinnor-based magnetometer (500) is provided having four resistive elements (R1-R4) exhibiting GMR in a bridge configuration. A bias current (504) applied to the bridge, yielding an output if the bridge is unbalanced due to changes in the GMR resistors. An oscillating magnetic field is applied inductively to the GMR resistors alternately driving them between saturated magnetic states. The drive conductors are physically arranged so that an external magnetic field will oppose the applied field in two resistors and aid the applied field in the other two. The output is nonzero only when the sum of the applied field and external field exceeds the GMR coercivity in one pair of GMR films and not the other. The frequency of the output signal can be varied by switching the polarity of the bias current and controlling the phase with respect to the drive current.

    ALL METAL GIANT MAGNETORESISTIVE MEMORY
    3.
    发明公开
    ALL METAL GIANT MAGNETORESISTIVE MEMORY 审中-公开
    全金属巨磁电阻存储器

    公开(公告)号：EP1305795A2

    公开(公告)日：2003-05-02

    申请号：EP01953397.5

    申请日：2001-06-27

    申请人： Integrated Magnetoelectronics Corporation

    发明人： SPITZER, Richard ,  TOROK, E., James

    IPC分类号： G11B3/00

    CPC分类号： H01F10/324 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/5607

    摘要： A memory device (100) is described which includes memory cells (102), access lines, and support electronics (104, 106, 108, 110) for facilitating access to information stored in the memory cells via the access lines. Both the memory cells and the support electronics comprise multi-layer thin film structures exhibiting giant magnetoresistance.

    摘要翻译： 描述了包括存储器单元（102），存取线和支持电子器件（104,106,108,110）的存储器器件（100），以便于通过存取线访问存储在存储器单元中的信息。 存储器单元和支撑电子器件都包括呈现巨磁电阻的多层薄膜结构。

    HIGH DENSITY GIANT MAGNETORESISTIVE MEMORY CELL
    10.
    发明公开
    HIGH DENSITY GIANT MAGNETORESISTIVE MEMORY CELL 审中-公开
    高密度巨磁阻存储器单元

    公开(公告)号：EP1386322A2

    公开(公告)日：2004-02-04

    申请号：EP01953615.0

    申请日：2001-06-27

    申请人： Integrated Magnetoelectronics Corporation

    发明人： TOROK, E., James ,  SPITZER, Richard

    IPC分类号： G11C11/00 ,  G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/5607

    摘要： A multi-layered memory cell (902) is described having a plurality of magnetic layers (904, 905), each of the magnetic layers being for magneticallystoring one bit of information. A plurality of access lines are integrated with the plurality of magnetic layers (904, 905) and configured such that the bits of information stored in each of selected ones of the magnetic layers may be independently accessed using selected ones of the plurality of access lines (908) and the giant magnetoresistive effect. The memory cell further includes at least one keeper layer (top or bottom). The magnetic layers (904, 905), the access lines (908), and the at least one keeper layer form a substantially closed flux structure.