Wireless transmission using an adaptive transmit antenna array
    1.
    发明公开
    Wireless transmission using an adaptive transmit antenna array 审中-公开
    DrahtloseÜbertragungunter Verwendung einer adaptiven Antennengruppe

    公开(公告)号:EP1359684A1

    公开(公告)日:2003-11-05

    申请号:EP02291093.9

    申请日:2002-04-30

    IPC分类号: H04B7/06 H04B7/08

    摘要: Closed loop wireless communication of signals using an adaptive transmit antenna array (3), in which a plurality of copies of signals to be transmitted by the transmit antenna array (3) are produced with delays and weights ( w j ​ n ) that are functions of the multi-path transmission channel characteristics (H) from the transmit antenna array (3) to a receive antenna array (4) of a receiver (2) and are combined before transmission by the transmit antenna array. The delays and weights ( w ​ j ​ n ) of the transmit copies for each transmit antenna element are functions of the respective multi-path transmission channel characteristics ( h l=1 n,m =1 ,..., h l=L n , m=M ) from that transmit antenna element to the receive antenna array (4) ssuch that the multi-path signal components propagated to each receiver element are received with distinguishable delays according to the propagation path. The receiver (2) combines the received signal components from each receive antenna element with delays and weights ( u ) that are respective functions of the multi-path transmission channels.
    Preferably, the receiver comprises a multi-finger RAKE receiver (6) that copies the received signals from the receive antenna array with delays and weights ( u ) that are respective functions of the multi-path transmission channels and combines the copied received signals.

    摘要翻译: 使用自适应发射天线阵列(3)的信号的闭环无线通信,其中由发射天线阵列(3)发射的信号的多个副本被产生具有多个功能的延迟和权重(wj_n) 从传送天线阵列(3)到接收机(2)的接收天线阵列(4)的 - 路径传输信道特性(H),并且在发射天线阵列发射之前被组合。 每个发射天线单元的发送副本的延迟和权重(w j)_n)是各个多径传输信道特性(h1 = 1_n,m = 1,...,hl = L_n,m = M)从发射天线元件到接收天线阵列(4),使得传播到每个接收器元件的多路径信号分量根据传播路径被可接收的延迟。 接收器(2)将来自每个接收天线元件的接收信号分量与作为多径传输信道的相应功能的延迟和加权(u)组合。 优选地,接收机包括多指RAKE接收机(6),其用来自接收天线阵列的接收信号复制具有作为多径传输信道的各自功能的延迟和加权(u),并将复制的 接收信号。

    SOLENOID DRIVER AND METHOD FOR DETERMINING SOLENOID OPERATIONAL STATUS
    2.
    发明公开
    SOLENOID DRIVER AND METHOD FOR DETERMINING SOLENOID OPERATIONAL STATUS 失效
    控制电路SOL和方法用于确定操作条件

    公开(公告)号:EP0882303A1

    公开(公告)日:1998-12-09

    申请号:EP97943456.0

    申请日:1997-09-23

    IPC分类号: H01F7 H01H47

    摘要: A solenoid driver (10) capable of detecting the operational status of a solenoid (12) including the position of an armature within a solenoid coil and an operational method. The solenoid driver (10) generates a first solenoid current within the solenoid (12) and measures a first decay time t1. The first solenoid current is insufficient to pull the armature into the coil of the solenoid (12). A comparator circuit (22) continuously monitors the solenoid current and initiates a timer within a counter circuit (34) to compute the first current decay time. A second solenoid current is generated within the solenoid (12) that is sufficient to pull the armature into the coil of the solenoid (12). The second solenoid current is turned off and a second decay time t2 is measured. The decay times are stored in storage registers (R1, R2) within a controller (36). The controller (36) compares the measured decay times with stored values and outputs the armature position information over a communications bus (34).

    Green-emitting benzotriazole metallic complexes for use in light emitting devices
    3.
    发明公开
    Green-emitting benzotriazole metallic complexes for use in light emitting devices 失效
    Gr n en en en en en en en en en en en en en en en en en en en en en en en en

    公开(公告)号:EP0710655A1

    公开(公告)日:1996-05-08

    申请号:EP95116865.7

    申请日:1995-10-26

    发明人: Shi, Song Q.

    摘要: A new class of organometallic complexes having the following general formula:

    where:

    M 2 is a divalent metal; and
    R 1 to R 8 represent substitution possibilities at each position and each represents hydrogen or hydrocarbon groups or functional groups,
    for use in electroluminescent (EL) devices and a method of preparation are disclosed. The organometallic complexes are prepared by mixing organic ligands with metal salts in the presence of a base and a layer is formed in an EL device by vacuum evaporation. The organometallic material in the EL device serves as either an electron transporting layer or a light emission layer, or both.

    摘要翻译: 有机发光器件包括以下重叠层:(a)第一导电层; (b)由第二载体阻挡材料覆盖的第一载流子传输层; (c)一层新的有机金属材料, 通过在碱的存在下将有机配体与金属盐混合并在真空蒸发下形成该层。 式(I)的化合物,其中M2 =二价金属离子; R1-R8 = H,烃gps。 或功能性gps。 (d)第二载体输送层和第一载体阻挡材料层; 和(e)第二导电层。 还要求保护的是第二有机发光器件。

    Electric energy storage devices
    4.
    发明公开
    Electric energy storage devices 无效
    Elektrische Energiespeichervorrichtung。

    公开(公告)号:EP0078404A2

    公开(公告)日:1983-05-11

    申请号:EP82109061.0

    申请日:1982-09-30

    发明人: Craig, Dwight R.

    IPC分类号: H01M14/00 H01G9/04

    摘要: This invention relates to novel type electrochemical devices such as capacitors or batteries, among other devices, which have high capacitance or power to volume or weight ratios, or which have other valuable characteristics, and which are characterized by the practical use of one or more phenomena, including pseudocapacitance, "kinetic reversibility" (passage of approximately equal and substantial charge or discharge currents at about the same rate), "coulombic reversibiiity" (passage of substantially equal numbers of coulombs in the charging and discharging of the device), distinguishable energy states of electrodeposited species on surfaces, creation of surface layers, electrochromic effects, negative differential resistance, and frequency multiplying effects which occur during, or as a result of, the formation or modification of an electrodeposited layer or layers on, or separation of charges in double layers in, one or more electrodes and/or as a result of the reaction(s) occurring between electrode and electrolyte.

    摘要翻译: 本发明涉及新型的电化学装置,例如电容器或电池等装置,其具有高容量或功率与体积或重量比,或具有其它有价值的特性,其特征在于实际使用一个或多个 现象,包括假电容,“动力学可逆性”(以相同的速率通过大致相等和相当大的充电或放电电流),“库仑可逆性”(在装置的充电和放电中通过基本上相等数量的库仑),可区分 电沉积物种在表面上的能量状态,表面层的产生,电致变色效应。 在一个或多个电极和/或作为一个或多个电极的双层中的电沉积层或层的形成或修饰或分离电荷或/或由于 电极和电解液之间发生反应。

    Current copy circuit arrangement
    5.
    发明公开
    Current copy circuit arrangement 审中-公开
    Elektrische Kopiervorrichtung

    公开(公告)号:EP1387234A1

    公开(公告)日:2004-02-04

    申请号:EP02291922.9

    申请日:2002-07-29

    发明人: Sicard Thierry

    IPC分类号: G05F3/26

    CPC分类号: G05F3/267

    摘要: An accurate and fast copy current circuit arrangement (250) and method for high current ratio having a first branch for carrying a first current ( I load ) ; a second branch for carrying a second current (2 I fb ) ; and a twisted current mirror arrangement (282, 284, 286, 288) coupled between the first branch and the second branch, wherein the second current (2 I fb ) is a copy representative of the first current ( I load ). The twisted current mirror arrangement (282, 284, 286, 288) includes a first current mirror having a first bipolar transistor (282) and a second bipolar transistor (284) whose bases are coupled together; and a second current mirror having a first MOSFET transistor (286) connected in series with the first bipolar transistor (282) and a second MOSFET transistor (288) connected in series with the second bipolar transistor (284), the first and second MOSFET transistors having their gates coupled together. A start-up current source (299) applies a start-up current to the junction between the first bipolar transistor (282) and the first MOSFET transistor (286) and provides bias during circuit operation.
    This avoids a conventional error amplifier, uses no closed voltage loop, and no capacitor to stabilize the voltage loop, and provides a faster response time.
    This provides more accurate copy current for high current ratio, better linearity and zero input error voltage.

    摘要翻译: 具有用于承载第一电流(Iload)的第一分支的高电流比的准确且快速的复制电流电路装置(250)和方法; 用于承载第二电流(2Ifb)的第二分支; 以及耦合在所述第一分支和所述第二分支之间的扭转电流镜布置(282,284,286,288),其中所述第二电流(IIff)是代表所述第一电流(Iload)的复制品。 扭转电流镜装置(282,284,286,288)包括具有第一双极晶体管(282)和第二双极晶体管(284)的第一电流镜,其基极耦合在一起; 和具有与第一双极晶体管(282)串联连接的第一MOSFET晶体管(286)和与第二双极晶体管(284)串联连接的第二MOSFET晶体管(288)的第二电流镜,第一和第二MOSFET晶体管 将门连接在一起。 启动电流源(299)将启动电流施加到第一双极晶体管(282)和第一MOSFET晶体管(286)之间的结,并在电路操作期间提供偏置。 这避免了传统的误差放大器,不使用闭合电压环路,也没有电容器来稳定电压环路,并提供更快的响应时间。 这为高电流比,更好的线性度和零输入误差电压提供了更准确的复制电流。

    A WIDE BANDWIDTH DISCRIMINATOR FOR USE IN A RADIO RECEIVER
    8.
    发明公开
    A WIDE BANDWIDTH DISCRIMINATOR FOR USE IN A RADIO RECEIVER 失效
    宽带无线接收器鉴别器

    公开(公告)号:EP0701750A4

    公开(公告)日:1996-07-31

    申请号:EP95910170

    申请日:1995-02-06

    IPC分类号: H03D3/06 H03D3/22 H04B1/10

    CPC分类号: H03D3/06 H03D3/22

    摘要: A wide bandwidth frequency discriminator circuit (200) employs a wide bandwidth limiting amplifier (202) to amplify the IF signal portion a received RF signal. A delay circuit (204), such as a micro strip transmission line, provides a delayed representation of the amplified signal to a multiplier circuit (206). The multiplier (206) in turn provides a product signal which is the product of the amplified output signal and the delayed representation of the amplified output signal. As will be appreciated, said product signal will be proportional to the phase difference between the amplified output signal and the delayed representation of the amplified output signal. This discriminator (200) operates to form a detection system capable of discriminating between desired and undesired components of the received RF signal even when said desired and undesired components are nearly identical in amplitude. This is due in part to the enhanced frequency response provided by the discriminator (200).

    Method of making ohmic contacts to a complementary semiconductor device
    10.
    发明公开
    Method of making ohmic contacts to a complementary semiconductor device 失效
    Verfahren zur Herstellung von chemischen Kontaktenfürkomplementaire Halbleiterbauelemente。

    公开(公告)号:EP0631324A1

    公开(公告)日:1994-12-28

    申请号:EP94109688.5

    申请日:1994-06-23

    IPC分类号: H01L29/40 H01L21/82

    摘要: The present invention encompasses a method for providing the same ohmic material contact (120, 122, 124) to N-type and P-type regions (70, 80) of a III-V semiconductor device. Specifically, an N-type region (70) extending through a semiconductor structure is formed. Additionally, a P-type region (80) extending through the substrate is formed. The P-type region (80) may be heavily doped with P-type impurities (81). A first ohmic region (117) is formed, contacting the N-type region (70). The first ohmic region may comprise an ohmic material including metal and an N-type dopant. A second ohmic region (119) is formed, contacting the P-type region (80, 81). The second ohmic region comprises the same ohmic material as the first ohmic region. One ohmic material that may be used is nickel-germanium-tungsten.

    摘要翻译: 本发明包括用于向III-V半导体器件的N型和P型区(70,80)提供相同的欧姆材料接触(120,122,124)的方法。 具体地说,形成了延伸穿过半导体结构的N型区域(70)。 此外,形成延伸穿过基板的P型区域(80)。 P型区域(80)可以重掺杂P型杂质(81)。 形成与N型区域(70)接触的第一欧姆区域(117)。 第一欧姆区域可以包括包含金属和N型掺杂剂的欧姆材料。 形成与P型区域(80,81)接触的第二欧姆区域(119)。 第二欧姆区包括与第一欧姆区相同的欧姆材料。 可以使用的一种欧姆材料是镍 - 锗 - 钨。