公开(公告)号：EP1825522A4

公开(公告)日：2009-04-01

申请号：EP05852246

申请日：2005-11-30

申请人： SEMISOUTH LAB INC

发明人： SANKIN IGOR ,  CASADY JEFFREY B ,  MERRETT JOSPEH N

IPC分类号： H01L29/423 ,  H01L27/098 ,  H01L29/24 ,  H01L29/808

CPC分类号： H01L29/2003 ,  H01L27/098 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/808 ,  H01L29/8122

摘要： A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprise source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.

公开(公告)号：EP1485940A4

公开(公告)日：2008-03-12

申请号：EP03709157

申请日：2003-02-21

申请人： SEMISOUTH LAB INC

发明人： SANKIN IGOR ,  CASADY JANNA B

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/24 ,  H01L29/732

CPC分类号： H01L29/66068 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1004 ,  H01L29/1608 ,  H01L29/732

摘要： Silicon carbide bipolar junction transistors having an overgrown base layer (18) are provided. The bipolar junction transistors can be made with a very thin (e.g., 0.3 µm or less) base layer while still possessing adequate peripheral base resistance values. Self aligning manufacturing techniques for making the silicon carbide bipolar junction transistors are also provided. Using these techniques, the spacing between emitter and base contacts on the device can be reduced. The silicon carbide bipolar junction transistors can also be provided with edge termination structures such as guard rings to increase the blocking capabilities of the device.

公开(公告)号：EP2271794A4

公开(公告)日：2011-07-27

申请号：EP09724153

申请日：2009-03-12

申请人： SEMISOUTH LAB INC

发明人： ZHANG JIE

IPC分类号： C30B23/06 ,  C30B29/36

CPC分类号： C30B25/18 ,  C30B29/36

公开(公告)号：EP1829113A4

公开(公告)日：2011-06-15

申请号：EP05849440

申请日：2005-11-30

申请人： SEMISOUTH LAB INC

发明人： SANKIN IGOR ,  MERRETT JOSEPH N

IPC分类号： H01L29/76

CPC分类号： H03K17/567 ,  H01L27/098 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/8086 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872

公开(公告)号：EP1726043A4

公开(公告)日：2010-11-03

申请号：EP05725593

申请日：2005-03-14

申请人： SEMISOUTH LAB INC

发明人： SANKIN IGOR ,  CASADY JANNA B ,  MERRETT JOSEPH N

IPC分类号： H01L29/76 ,  H01L29/15 ,  H01L29/423 ,  H01L29/745 ,  H01L31/0312

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/45 ,  H01L29/66863 ,  H01L29/8128

公开(公告)号：EP1913640A4

公开(公告)日：2009-09-02

申请号：EP05858324

申请日：2005-11-16

申请人： SEMISOUTH LAB INC ,  UNIV MISSISSIPPI

发明人： CHENG LIN ,  MAZZOLA MICHAEL S

IPC分类号： H01L29/74 ,  H01L29/80 ,  H01L31/111 ,  H01L31/112

CPC分类号： H01L29/8083 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/66909

摘要： Semiconductor devices and methods of making the devices are described. The devices can be implemented in SiC and can include expitaxially grown n-type drift and p-type trenched gate regions, and an n-type epitaxially regrown channel region on top of the trenched p-gate regions. A source region can be epitaxially regrown on top of the channel region or selectively implanted into the channel region. Ohmic contacts to the source, gate and drain regions can then be formed. The devices can include edge termination structures such as guard rings, junction termination extensions (JTE), or other suitable p-n blocking structures. The devices can be fabricated with different threshold voltages, and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used as discrete power transistors and in digital, analog, and monolithic microwave integrated circuits.

公开(公告)号：EP1485942A4

公开(公告)日：2009-12-09

申请号：EP03723635

申请日：2003-02-21

申请人： SEMISOUTH LAB INC

发明人： SANKIN IGOR ,  CASADY JANNA B

IPC分类号： H01L21/04 ,  H01L29/47 ,  H01L21/331 ,  H01L21/337 ,  H01L29/06 ,  H01L29/24 ,  H01L29/732 ,  H01L29/772 ,  H01L29/78 ,  H01L29/80 ,  H01L29/808 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872

CPC分类号： H01L29/66068 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/732 ,  H01L29/7722 ,  H01L29/7835 ,  H01L29/868 ,  H01L29/872

公开(公告)号：EP1779435A4

公开(公告)日：2007-10-24

申请号：EP05858028

申请日：2005-07-08

申请人： SEMISOUTH LAB INC ,  UNIV MISSISSIPPI

发明人： MAZZOLA MICHAEL S ,  MERRETT JOSEPH N

IPC分类号： H01L27/08 ,  H01L21/82 ,  H01L27/06 ,  H01L27/098 ,  H01L29/15

CPC分类号： H01L29/872 ,  H01L27/0641 ,  H01L27/0814 ,  H01L27/098 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/8083

摘要： A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.