Abstract:
A biochip (200) having an image sensor with a back side illumination photodiode structure includes: a biochip layer (200a); and an image sensor layer (200b) attached to one surface of the biochip layer and configured to sense light with biochemical reaction information, which is emitted from the biochip layer, wherein the image sensor layer includes a plurality of light sensing parts (PD1,PD2,PD3) which receive the light directed toward a back side of a wafer.
Abstract:
A three-dimensional image display apparatus using a flat panel display unit is provided. The three-dimensional image display apparatus includes a flat panel display unit, reflecting plate arrays reflecting incident light, and a vibrator vibrating the reflecting plate arrays from left to right or from right to left, wherein the reflecting plate arrays are moved according to time by an vibration of the vibrator, and wherein a three-dimensional image is displayed by changing an image of the flat panel display unit based on an angle of the reflecting plate arrays. The three-dimensional image display apparatus has advantages that no auxiliary apparatuses such as special glasses are required to recognize the three-dimensional image, and that has no deterioration of an image quality, which is the biggest drawback of a general three-dimensional image display apparatus, and that observation of a three-dimensional image is not limited to one person. Also, the three-dimensional image display apparatus is capable of representing a multi-viewpoint image and selective representation of two-dimensional and three-dimensional images.
Abstract:
Disclosed are a 4T-4S step & repeat unit pixel used in an image sensor and an image sensor having the same. The 4T-4S step & repeat unit pixel has four diffusion area patterns for photodiodes and three diffusion area patterns for an image signal conversion circuit. An aperture ratio of the image sensor increases in maximum by using four photodiodes arranged in a diagonal direction from each other and three diffusion area patterns arranged between the photodiodes near their edges.
Abstract:
A CMOS stereo camera for obtaining a three-dimensional image, in which two CMOS image sensors having the same characteristics are disposed on a single semiconductor substrate, is provided. The CMOS image sensors have image planes which are located on the same plane by disposing the two CMOS image sensors on the same semiconductor substrate. A digital signal processor (DSP) for processing a three-dimensional image is disposed between the CMOS image sensors. Optical axes of the CMOS image sensors are parallel with each other and orthogonal to the image planes. Since optical devices formed on the CMOS image sensors can be manufactured through the same processes, distortion of the optical axes between the two CMOS image sensors can be minimized.
Abstract:
A method of manufacturing a pixel of an image sensor including a protruded photodiode capable of improving photosensitivity and reducing crosstalk between neighboring pixels and a pixel of an image sensor formed using the method are provided. The pixel of the semiconductor image sensor includes a protrudedly shaped photodiode on a surface of a semiconductor substrate. A surface area of the photodiode with respect to a surface area of the image sensor pixel increases to improve photosensitivity, and a microlens is not needed due to the improvement of the fill factor. In addition, the crosstalk of neighboring pixels can be removed.