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公开(公告)号：EP1580607A3
公开(公告)日：2005-10-12
申请号：EP05005646.4
申请日：2005-03-15
IPC分类号： G03F7/32 , G03F7/40 , H01L21/306
CPC分类号： G03F7/32 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/322 , G03F7/38 , G03F7/40 , G03F7/425
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 包含一种或多种表面活性剂的工艺溶液用于减少制造半导体器件中的缺陷数量。 在某些实施例中，当在图案化光刻胶层的显影期间或之后用作漂洗溶液时，处理溶液可以减少显影后缺陷，例如图案塌陷或线宽粗糙度。 还公开了一种用于减少使用本发明的处理溶液的多个光致抗蚀剂涂覆的基板上的缺陷例如图案塌陷和/或线宽粗糙度的方法。
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公开(公告)号：EP1389746A2
公开(公告)日：2004-02-18
申请号：EP03017570.7
申请日：2003-08-07
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些优选实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，本发明的工艺溶液可以减少显影后缺陷，例如图案塌陷。 还公开了一种减少使用本发明的工艺溶液的多个光致抗蚀剂涂覆的基材上的图案塌陷缺陷的数量的方法。
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公开(公告)号：EP1580607B1
公开(公告)日：2014-10-22
申请号：EP05005646.4
申请日：2005-03-15
CPC分类号： G03F7/32 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/322 , G03F7/38 , G03F7/40 , G03F7/425
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公开(公告)号：EP1826613A3
公开(公告)日：2011-01-12
申请号：EP07003658.7
申请日：2007-02-22
CPC分类号： G03F7/0752 , G03F7/11 , G03F7/2041
摘要： The present invention provides a top coat composition comprising a silicon-containing polymer prepared by hydrolysis and condensation of at least one silica source; a solvent; optionally a catalyst; and optionally water, wherein the silicon-containing polymer depolymerizes upon exposure to an aqueous base-containing solution.
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公开(公告)号：EP1557721A2
公开(公告)日：2005-07-27
申请号：EP05000989.3
申请日：2005-01-19
IPC分类号： G03F7/20
CPC分类号： G03F7/2041
摘要： Suitable additives that may be added into immersion fluids, immersion fluids comprising at least one carrier medium selected from an aqueous fluid, a non-aqueous fluid, and mixtures thereof, and immersions fluids comprising at least one carrier medium and at least one additive useful for performing immersion lithography at an operating wavelength ranging from 140 nm to 365 nm are disclosed herein.
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6.发明公开Process solutions containing surfactants used as post-chemical mechanical planarization treatment 审中-公开Tenside enthaltendeBehandlungslösungenzum chemisch-mechanischen Nachpolieren
公开(公告)号：EP1530232A2
公开(公告)日：2005-05-11
申请号：EP04024854.4
申请日：2004-10-19
发明人： Zhang, Peng , Ross, Brenda Faye
IPC分类号： H01L21/321 , C09G1/04
CPC分类号： H01L21/02074 , C11D1/08 , C11D1/40 , C11D1/72 , C11D3/164 , C11D11/0047 , Y10S134/902
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce defects when employed as a rinse solution either during or after the development of the CMP processing. Also disclosed is a method for reducing the number of defects on a plurality of post-CMP processed substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些优选实施方案中，本发明的方法溶液可以在CMP处理过程中或之后用作冲洗溶液时减少缺陷。 还公开了一种减少使用本发明的处理溶液的多个后CMP处理基板上的缺陷数量的方法。
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公开(公告)号：EP1389745B1
公开(公告)日：2015-01-28
申请号：EP03017569.9
申请日：2003-08-07
IPC分类号： G03F7/16
CPC分类号： B01F17/0028 , B01F17/0021 , G03F7/0048 , G03F7/16 , G03F7/38
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8.发明公开Acetylenic diol surfactant solutions and methods of using same 有权乙酰胆碱酯酸酯（Enetylendioltenside enthaltendeLösungenund Verfahren unter Verwendung derselben
公开(公告)号：EP1389745A1
公开(公告)日：2004-02-18
申请号：EP03017569.9
申请日：2003-08-07
IPC分类号： G03F7/16
CPC分类号： B01F17/0028 , B01F17/0021 , G03F7/0048 , G03F7/16 , G03F7/38
摘要： Aqueous solutions comprising one or more acetylenic diol type surfactants are used to improve the wettability of a substrate surface by lowering the contact angle of the aqueous developer solution are enclosed herein. In one embodiment, the aqueous solution is used to prepare the surface of the substrate prior to development of the resist coating layer.
摘要翻译： 包含一种或多种炔属二醇型表面活性剂的水溶液用于通过降低含水显影剂溶液的接触角来改善基材表面的润湿性。 在一个实施方案中，水溶液用于在显影抗蚀剂涂层之前制备基材的表面。
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公开(公告)号：EP1389746A3
公开(公告)日：2007-05-30
申请号：EP03017570.7
申请日：2003-08-07
IPC分类号： G03F7/16 , G03F7/40 , G03F7/32 , G03F7/38 , G03F7/09 , G03F7/004 , G03F7/42 , C11D11/00 , C11D1/72 , C11D1/722 , H01L21/306
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.
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公开(公告)号：EP1580607A2
公开(公告)日：2005-09-28
申请号：EP05005646.4
申请日：2005-03-15
CPC分类号： G03F7/32 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/322 , G03F7/38 , G03F7/40 , G03F7/425
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，所述工艺溶液可以减少显影后缺陷，例如图案塌陷或线宽粗糙度。 还公开了一种使用本发明的工艺溶液来减少多个光致抗蚀剂涂覆的基板上的图案塌陷和/或线宽粗糙度等缺陷的数量的方法。
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