RF powered plasma enhanced chemical vapour deposition reactor and methods of effecting plasma enhanced chemical vapour deposition
    2.
    发明公开
    RF powered plasma enhanced chemical vapour deposition reactor and methods of effecting plasma enhanced chemical vapour deposition 审中-公开
    反应器为射频供电等离子体活化化学气相沉积和用于执行所述的沉积方法

    公开(公告)号:EP1764822A2

    公开(公告)日:2007-03-21

    申请号:EP06023795.5

    申请日:1999-02-16

    IPC分类号: H01J37/32 C23C16/505

    摘要: A reactor comprises a chamber (31) defining a processing volume. A first electrode (32) is disposed inside the chamber and a second electrode (34) outside the chamber. A transformer has an input side and an output side, the input side being connected to and receiving power generated by, an RF power generator. The output side has at least one output terminal connected to the first electrode (32) and at least one other output terminal connected to the second electrode (34). The output side provides power to each of the first and second electrodes in accordance with a selected power ratio.

    摘要翻译: 的反应器包括限定处理空间的腔室(31)。 的第一电极(32)的腔室和所述腔室外侧的第二电极(34)的内部设置。 一种变压器,具有输入侧和输出侧,输入侧被连接到在由RF功率发生器生成和接收电力。 输出侧具有连接到所述第一电极(32)的至少一个输出端,并且连接到所述第二电极(34)的至少一个其它输出端子。 输出侧提供电源到每一个雅舞蹈的第一和第二电极与所选择的功率比。

    Methods and apparatus for cleaning using a chlorine containing gas plasma
    3.
    发明公开
    Methods and apparatus for cleaning using a chlorine containing gas plasma 失效
    Verfahren und Vorrichtung zum Reinigen unter Anwendung von chlorhaltigem Gasplasma

    公开(公告)号:EP0855453A1

    公开(公告)日:1998-07-29

    申请号:EP98300528.1

    申请日:1998-01-26

    IPC分类号: C23C16/44 C23C16/52

    摘要: The present invention provides methods and apparatus for cleaning unwanted metal deposits using a halogen-containing gas, such as a chlorine-containing gas in some embodiments, with RF energy at a temperature of at least 400°C to provide a plasma clean treatment. According to another embodiment, the present invention also provides a process of cleaning a deposition chamber (30) that includes steps of pressurizing the chamber to a first pressure with a non-reactive gas, reducing the first pressure to a cleaning process pressure, and flowing a reactive gas into the chamber at the cleaning process pressure such that the non-reactive gas outgasses from the interior space to minimise intrusion of the reactive gas into the interior space.

    摘要翻译: 本发明提供了在一些实施例中使用含卤素气体(例如含氯气体)在至少400℃的温度下用RF能量清洁不需要的金属沉积物以提供等离子体清洁处理的方法和装置。 根据另一个实施例,本发明还提供一种清洁沉积室(30)的方法,该沉积室包括以下步骤:用非反应性气体将室加压至第一压力,将第一压力降低至清洗过程压力,并流动 在清洁过程压力下将反应性气体输入到室中,使得非反应性气体从内部空间排出,以最小化反应气体侵入内部空间。