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    Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device
    4.
    发明公开
    Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device 有权
    Verfahren und Anordnung zur Prognose von thermisch induzierten Substratdeformationen

    公开(公告)号：EP1775635A1

    公开(公告)日：2007-04-18

    申请号：EP06122153.7

    申请日：2006-10-12

    申请人： ASML Netherlands B.V.

    发明人： Menchtchikov, Boris ,  de Jong, Frederik Eduard

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70633 ,  G03F7/70341 ,  G03F7/70425 ,  G03F7/70783 ,  G03F7/70875

    摘要： The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.

    摘要翻译： 本发明提供一种用于校正光刻曝光的基底的热诱导场变形的方法。 首先，提供模型来预测衬底的多个场的热诱导场变形信息。 然后根据由模型预测的热诱导变形信息来修改用于配置场的曝光的预定曝光信息。 最后，根据修改的预先指定的曝光信息，将图案曝光到场上。 通过模型预测热诱导场变形信息包括预测基板上选定点的变形效应。 它是基于时间衰减的特性，因为能量被传送到基板上; 以及所选择的点与衬底的边缘之间的距离。

    Thermal deformation of a wafer in a lithographic process
    7.
    发明公开
    Thermal deformation of a wafer in a lithographic process 审中-公开
    Thermische Verformung eines在einem lithographischen Verfahren的晶圆

    公开(公告)号：EP1548504A1

    公开(公告)日：2005-06-29

    申请号：EP04078446.4

    申请日：2004-12-17

    申请人： ASML Netherlands B.V.

    发明人： Ottens, Joost Joroen ,  Van der Schoot, Harmen Klaas ,  Starreveld, Jeroen Pieter ,  Maas, Wouters Johannes Petrus Maria ,  Venema, Willem Jurrianus ,  Menchtchikov, Boris

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70616 ,  G03F7/70783 ,  G03F7/70875

    摘要： A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with prespecified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the prespecified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations.
    Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.

    摘要翻译： 本文给出了一种校正光刻曝光的基底的热诱导场变形的方法和装置。 在一个实施例中，该方法包括根据预定的曝光信息将图案曝光到基板的多个场上，并且测量场的属性以评估由曝光过程的热效应引起的场的变形。 该方法还包括基于所测量的属性来确定校正信息，并且基于校正信息来调整预先指定的曝光信息，以补偿热诱导的场变形。 其他实施例包括使用预测模型来预测对场的热诱导效应和热成像以确定跨越衬底的温度变化。