摘要:
The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.
摘要:
Compositions having a high metal content comprising a metal salt solution, a stabilizer and one or more optional additives, wherein the metal salt solution comprises a metal ion, a counter ion and a solvent. The compositions are useful for forming films on substrates in the manufacture of solid state and integrated circuit devices.
摘要:
The present invention relates to novel, soluble, multi-ligand-substituted metal oxide compounds to form metal oxide films with improved stability as well as compositions made from them and methods of their use. Specifically, the invention pertains to compounds having the following structure (I) wherein M is a metal and n is 1 to 20, and wherein at least one of R1, R2, R3, and R4 is i) and at least at least one of R1, R2, R3, and R4 is ii), where i) is a silicon bearing organic moiety having at least 2 carbons, and ii) is an organic moiety. The invention also relates to spin-coatable compositions of compounds of structure (I) dissolved into a solvent. The present invention further relates to processes using this spin coatable composition to form a coating on a patterned substrate.
摘要:
The present invention relates to novel compositions comprising a metal component selected from a group chosen from at least one polyoxometalate, at least one heteropolyoxometalate and a mixture thereof; and, at least one organic component. The present invention also relates to methods of preparing the nanorod arrays and the nanorod materials and films. The present invention also relates to novel compositions to generate metal-oxide rich films, and also relates to processes for via or trench filling, reverse via or trench filling and imaging with underlayers. The materials are useful in wide range of manufacturing applications in many industries, including the semiconductor devices, electro-optical devices and energy storage industry.
摘要:
The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.
摘要:
The present invention relates to novel, soluble, multi-ligand-substituted metal oxide compounds to form metal oxide films with improved stability as well as compositions made from them and methods of their use. Specifically, the invention pertains to compounds having the following structure (I) wherein M is a metal and n is 1 to 20, and wherein at least one of R1, R2, R3, and R4 is i) and at least at least one of R1, R2, R3, and R4 is ii), where i) is a silicon bearing organic moiety having at least 2 carbons, and ii) is an organic moiety. The invention also relates to spin-coatable compositions of compounds of structure (I) dissolved into a solvent. The present invention further relates to processes using this spin coatable composition to form a coating on a patterned substrate.
摘要:
The present disclosure relates to soluble, multi-ligand-substituted metal compounds with improved stability as well as compositions made from them and methods of their use.