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公开(公告)号：EP2929397B1
公开(公告)日：2020-03-18
申请号：EP13852369.1
申请日：2013-12-04
发明人： LIU, Weihong , LU, PingHung , TOUKHY, Medhat A. , LAI, SookMee , SAKURAI, Yoshiharu , HISHIDA, Aritaka
IPC分类号： G03F7/039
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4.发明公开
公开(公告)号：EP3465346A1
公开(公告)日：2019-04-10
申请号：EP17729416.2
申请日：2017-05-29
发明人： WANG, Xiaowei , NAGAHARA, Tatsuro
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公开(公告)号：EP3212714B1
公开(公告)日：2019-03-06
申请号：EP15794100.6
申请日：2015-10-28
发明人： WU, Hengpeng , YIN, Jian , LIN, Guanyang , KIM, Jihoon , PAUNESCU, Margareta
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公开(公告)号：EP3436266A1
公开(公告)日：2019-02-06
申请号：EP17714696.6
申请日：2017-03-29
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公开(公告)号：EP3049449B1
公开(公告)日：2019-01-09
申请号：EP14772163.3
申请日：2014-09-24
发明人： WU, Hengpeng , YIN, Jian , LIN, Guanyang , KIM, Jihoon , SHAN, Jianhui
IPC分类号： H01L21/02 , G03F7/00 , C08F220/40 , C08F220/14
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8.发明授权
公开(公告)号：EP3257069B1
公开(公告)日：2018-11-21
申请号：EP16702558.4
申请日：2016-02-02
IPC分类号： H01L21/02
CPC分类号： C09D5/006 , C23C18/1212 , C23C18/1216 , C23C18/1245 , C23C18/1295 , G03F7/11 , H01L21/02142 , H01L21/02172 , H01L21/02175 , H01L21/02282 , H01L21/3081 , H01L21/3086 , H01L21/31133 , H01L21/31138
摘要： The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.
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公开(公告)号：EP2861638B1
公开(公告)日：2018-11-14
申请号：EP13723081.9
申请日：2013-05-13
发明人： CHEN, Chunwei , LU, PingHung , LIU, Weihong , TOUKHY, Medhat A. , KIM, SangChul , LAI, SookMee
IPC分类号： C08F220/18 , G03F7/027 , G03F7/033 , G03F7/038
CPC分类号： G03F7/028 , C08F220/18 , G03F7/027 , G03F7/033 , G03F7/0755 , G03F7/0757 , G03F7/30 , G03F7/40 , C08F2220/185 , C08F220/20 , C08F2220/281 , C08F220/06 , C08F2220/1825 , C08F212/08
摘要： Disclosed are compositions for negative-working thick film photophotoresists based on acrylic co-polymers. Also included are methods of using the compositions.
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公开(公告)号：EP2822988B1
公开(公告)日：2018-11-14
申请号：EP13705489.6
申请日：2013-02-22
发明人： YIN, Jian , WU, Hengpeng , HONG, SungEun , NEISSER, Mark , CAO, Yi
CPC分类号： B05D5/00 , B01D15/361 , B01J39/05 , B01J41/07 , B01J45/00 , B05D1/005 , B05D3/00 , C08F6/02 , C08J3/00 , C08L53/00
摘要： The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.
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