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    Dosimetry cup charge collection in plasma immersion ion implantation
    3.
    发明公开
    Dosimetry cup charge collection in plasma immersion ion implantation 审中-公开
    剂量与电荷收集杯与等离子体浸没离子注入

    公开(公告)号：EP0994203A3

    公开(公告)日：2001-11-21

    申请号：EP99307092.9

    申请日：1999-09-07

    申请人： Axcelis Technologies, Inc.

    发明人： Chen, Jiong ,  Kellerman, Peter Lawrence ,  Denholm, Alec Stuart ,  Shao, Jiqun

    IPC分类号： C23C14/48 ,  C23C14/54 ,  H01J37/32 ,  H01J37/244 ,  H01J37/317

    CPC分类号： H01J37/32412 ,  C23C14/48 ,  H01J37/3299 ,  H01J2237/31703

    摘要： Method and apparatus for causing ions to impact a workpiece implantation surface (14a). A process chamber (12) defines a chamber interior (42) into which one or more workpieces (14) can be inserted for ion treatment. An energy source (40) sets up an ion plasma within the process chamber (12). A support (30) positions one or more workpieces (14) within an interior region (42) of the process chamber (12) so that an implantation surface (14a) of the one or more workpieces (14) is positioned within the ion plasma. A pulse generator (50) in electrical communication with the workpiece support (30) applies electrical pulses for attracting ions to the support (30). One or more dosimetry cups (60) including an electrically biased ion collecting surface (69) are disposed around the workpiece support (30) to measure implantation current. An implantation controller (185) monitors signals from the one or more dosimetry cups (60) to control ion implantation of the workpiece (14).

    Method and apparatus for ion beam neutralization
    5.
    发明公开
    Method and apparatus for ion beam neutralization 失效
    对于离子束中和方法及装置

    公开(公告)号：EP0822571A3

    公开(公告)日：2001-10-04

    申请号：EP97305547.8

    申请日：1997-07-24

    申请人： Axcelis Technologies, Inc.

    发明人： Chen, Jiong ,  Benveniste, Victor Maurice

    IPC分类号： H01J37/317 ,  H01J37/02

    CPC分类号： H01J37/026 ,  H01J2237/0041 ,  H01J2237/31701

    摘要： Method and apparatus for maintaining an ion beam (14) along a beam path from an ion source (12) to an ion implantation station (16) where workpieces are treated with the ion beam. An ion beam neutralizer (44) is positioned upstream from the ion treatment station and includes confinement structure (120) which bounds the ion beam path. An electron source (126) positioned within the confinement structure emits electrons into the ion beam. An array of magnets (124) supported by the confinement structure creates a magnetic field which tends to confine the electrons moving within the confinement structure. An interior magnetic filter field is created inside the confinement structure by a plurality of axially elongated filter rods (208) having encapsulated magnets (224) bounding the ion beam and oriented generally parallel to the ion beam path. This interior magnetic field confines higher energy electrons (300) from leaving the ion beam path and permits lower energy electrons (301) to drift along the ion beam.