利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.01 秒)

    Serial wafer handling mechanism
    1.
    发明公开
    Serial wafer handling mechanism 审中-公开
    Vorrichtung zur seriellen Behandlung von Wafern

    公开(公告)号：EP1109201A2

    公开(公告)日：2001-06-20

    申请号：EP00310724.0

    申请日：2000-12-04

    申请人： Axcelis Technologies, Inc.

    发明人： Ryan, Kevin Thomas ,  Kellerman, Peter Lawrence ,  Sinclair, Frank ,  Allen, Ernest Everett, Jr. ,  Fish, Roger Bradford

    IPC分类号： H01L21/00

    CPC分类号： H01L21/68707 ,  H01L21/67742 ,  H01L21/67745 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141 ,  Y10S438/908 ,  Y10S438/913 ,  Y10T29/41

    摘要： A wafer handling system for a wafer processing apparatus includes a wafer load lock chamber, a wafer processing chamber and a transfer chamber operatively coupled to the wafer load lock chamber and the wafer processing chamber. The transfer chamber includes a wafer transfer mechanism comprising a transfer arm pivotably coupled to a portion of the transfer chamber which forms an axis. The transfer arm is operable to rotate about the axis to transfer a wafer between the wafer load lock chamber and the process chamber in a single axis wafer movement. The invention also includes a method of transferring a wafer to a wafer processing apparatus. The method includes loading a wafer into a wafer load lock chamber and rotating a transfer arm into the wafer load lock chamber to retrieve the wafer therein. The method further includes rotating the transfer arm out of the wafer load lock chamber and into a process chamber to deposit the wafer therein, wherein the rotating of the transfer arm occurs in a single axis wafer movement.

    摘要翻译： 用于晶片处理设备的晶片处理系统包括晶片加载锁定室，晶片处理室和可操作地耦合到晶片加载锁定室和晶片处理室的传送室。 传送室包括晶片传送机构，其包括可枢转地联接到形成轴的传送室的一部分的传送臂。 传送臂可操作以围绕轴线旋转，以在单轴晶片运动中在晶片加载锁定室和处理室之间传送晶片。 本发明还包括将晶片转移到晶片处理装置的方法。 该方法包括将晶片加载到晶片加载锁定室中，并将转移臂旋转到晶片加载锁定室中以在其中回收晶片。 该方法还包括将传送臂从晶片加载锁定室旋转并进入处理室以将晶片沉积在其中，其中转移臂的旋转以单轴晶片运动发生。

    Method and system for microwave excitation of plasma in an ion beam guide
    2.
    发明公开
    Method and system for microwave excitation of plasma in an ion beam guide 有权
    Verfahren und Vorrichtung zur Mikrowellenanregung eines等离子体在einerIonenstrahlführungsvorrichtung

    公开(公告)号：EP1176624A3

    公开(公告)日：2005-06-15

    申请号：EP01306059.5

    申请日：2001-07-13

    申请人： Axcelis Technologies, Inc.

    发明人： Benveniste, Victor M. ,  Divergilio, William F. ,  Sinclair, Frank

    IPC分类号： H01J37/317 ,  H01J37/05 ,  H01J37/32 ,  H01J37/02 ,  H01P3/16

    CPC分类号： H01J37/32623 ,  H01J37/05 ,  H01J37/3171 ,  H01J37/32678

    摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet (114) mounted in a passageway (139) along the path (129) of an ion beam(128), a power source (174) adapted to provide an electric field in the passageway (139), and a magnetic device (170) adapted to provide a multi-cusped magnetic field in the passageway (139), which may include a plurality of magnets (220) mounted along at least a portion of the passageway (139). The power source (174) and the magnets (220) may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion (234) of the passageway (139). The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide (250) adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method (300) of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.

    摘要翻译： 公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。 该设备包括沿着离子束（128）的路径（129）安装在通道（139）中的质量分析磁体（114），适于在通道（139）中提供电场的电源（174） 以及适于在所述通道（139）中提供多通道磁场的磁性装置（170），所述磁性装置可以包括沿着所述通道（139）的至少一部分安装的多个磁体（220）。 电源（174）和磁体（220）可以协同地相互作用以沿通道（139）的至少一部分（234）提供电子回旋共振（ECR）状态。 多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极场上，以与给定的低能量离子束的已知RF或微波频率的电场相互作用。 本发明还包括质量分析器波导（250），其适于沿着质量分析器通道的长度一致地将电场耦合到束等离子体，从而改善ECR条件的产生。 因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。 本发明还包括在低能离子注入系统中提供离子束容纳的方法（300）以及离子注入系统。

    Serial wafer handling mechanism
    4.
    发明公开
    Serial wafer handling mechanism 审中-公开
    对于晶片的串行处理的装置

    公开(公告)号：EP1109201A3

    公开(公告)日：2003-11-05

    申请号：EP00310724.0

    申请日：2000-12-04

    申请人： Axcelis Technologies, Inc.

    发明人： Ryan, Kevin Thomas ,  Kellerman, Peter Lawrence ,  Sinclair, Frank ,  Allen, Ernest Everett, Jr. ,  Fish, Roger Bradford

    IPC分类号： H01L21/00

    CPC分类号： H01L21/68707 ,  H01L21/67742 ,  H01L21/67745 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141 ,  Y10S438/908 ,  Y10S438/913 ,  Y10T29/41

    摘要： A wafer handling system for a wafer processing apparatus includes a wafer load lock chamber, a wafer processing chamber and a transfer chamber operatively coupled to the wafer load lock chamber and the wafer processing chamber. The transfer chamber includes a wafer transfer mechanism comprising a transfer arm pivotably coupled to a portion of the transfer chamber which forms an axis. The transfer arm is operable to rotate about the axis to transfer a wafer between the wafer load lock chamber and the process chamber in a single axis wafer movement. The invention also includes a method of transferring a wafer to a wafer processing apparatus. The method includes loading a wafer into a wafer load lock chamber and rotating a transfer arm into the wafer load lock chamber to retrieve the wafer therein. The method further includes rotating the transfer arm out of the wafer load lock chamber and into a process chamber to deposit the wafer therein, wherein the rotating of the transfer arm occurs in a single axis wafer movement.

    Method and system for microwave excitation of plasma in an ion beam guide
    7.
    发明公开
    Method and system for microwave excitation of plasma in an ion beam guide 有权
    一种用于在离子束导向装置的等离子体的微波激发的方法和装置

    公开(公告)号：EP1176624A2

    公开(公告)日：2002-01-30

    申请号：EP01306059.5

    申请日：2001-07-13

    申请人： Axcelis Technologies, Inc.

    发明人： Benveniste, Victor M. ,  Divergilio, William F. ,  Sinclair, Frank

    IPC分类号： H01J37/317 ,  H01J37/05 ,  H01J37/32

    CPC分类号： H01J37/32623 ,  H01J37/05 ,  H01J37/3171 ,  H01J37/32678

    摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet (114) mounted in a passageway (139) along the path (129) of an ion beam(128), a power source (174) adapted to provide an electric field in the passageway (139), and a magnetic device (170) adapted to provide a multi-cusped magnetic field in the passageway (139), which may include a plurality of magnets (220) mounted along at least a portion of the passageway (139). The power source (174) and the magnets (220) may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion (234) of the passageway (139). The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide (250) adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method (300) of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.

    Wafer processing chamber having separable upper and lower halves
    8.
    发明公开
    Wafer processing chamber having separable upper and lower halves 审中-公开
    晶片处理室具有可分离上半部和下半部

    公开(公告)号：EP1109202A3

    公开(公告)日：2004-02-11

    申请号：EP00310725.7

    申请日：2000-12-04

    申请人： Axcelis Technologies, Inc.

    发明人： Ryan, Kevin Thomas ,  Kellerman, Peter Lawrence ,  Sinclair, Frank ,  Allen, Jr., Ernest Everett ,  Fish, Roger Bradford

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67126 ,  H01L21/67742 ,  H01L21/67745 ,  Y10S414/139

    摘要： A wafer processing apparatus includes a processing chamber having a top chamber portion and a bottom chamber portion, respectively. The apparatus further includes an annular ring valve associated with one of the top chamber portion and the bottom chamber portion which is operable to close the processing chamber for processing in a first position and open the processing chamber for access thereto in a second position. The ring valve, in the first position, provides a substantially uniform surface about an inner periphery of the closed processing chamber, and thereby facilitates uniform processing conditions. A method of accessing a wafer processing apparatus is also disclosed and includes moving an annular ring valve within a processing chamber between two positions. In the first position the annular ring valve sealingly blocks an access port of the processing chamber and thereby prohibits access thereto, and in the second position the annular ring valve does not block the access port, and permits access to the processing chamber. The annular ring valve has a substantially uniform inner peripheral surface, and thereby facilitates uniform processing conditions within the processing chamber when in the first position.

    Wafer processing chamber having separable upper and lower halves
    10.
    发明公开
    Wafer processing chamber having separable upper and lower halves 审中-公开
    Waferbehandlungskammer mit trennbaren oberen und unterenHälften

    公开(公告)号：EP1109202A2

    公开(公告)日：2001-06-20

    申请号：EP00310725.7

    申请日：2000-12-04

    申请人： Axcelis Technologies, Inc.

    发明人： Ryan, Kevin Thomas ,  Kellerman, Peter Lawrence ,  Sinclair, Frank ,  Allen, Jr., Ernest Everett ,  Fish, Roger Bradford

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67126 ,  H01L21/67742 ,  H01L21/67745 ,  Y10S414/139

    摘要： A wafer processing apparatus includes a processing chamber having a top chamber portion and a bottom chamber portion, respectively. The apparatus further includes an annular ring valve associated with one of the top chamber portion and the bottom chamber portion which is operable to close the processing chamber for processing in a first position and open the processing chamber for access thereto in a second position. The ring valve, in the first position, provides a substantially uniform surface about an inner periphery of the closed processing chamber, and thereby facilitates uniform processing conditions. A method of accessing a wafer processing apparatus is also disclosed and includes moving an annular ring valve within a processing chamber between two positions. In the first position the annular ring valve sealingly blocks an access port of the processing chamber and thereby prohibits access thereto, and in the second position the annular ring valve does not block the access port, and permits access to the processing chamber. The annular ring valve has a substantially uniform inner peripheral surface, and thereby facilitates uniform processing conditions within the processing chamber when in the first position.

    摘要翻译： 晶片处理装置包括分别具有顶部室部分和底部室部分的处理室。 该装置还包括与顶部室部分和底部室部分中的一个相关联的环形环阀，其可操作以关闭处理室以在第一位置处理并打开处理室以在第二位置进入其中。 环形阀在第一位置处提供围绕封闭处理室的内周的基本均匀的表面，从而有利于均匀的加工条件。 还公开了访问晶片处理装置的方法，并且包括在两个位置之间移动处理室内的环形环阀。 在第一位置，环形环阀密封地阻塞处理室的进入口，从而禁止进入其中，并且在第二位置，环形环阀不阻挡进入口，并允许进入处理室。 环形环阀具有基本均匀的内周面，从而在处于第一位置时有利于处理室内的均匀加工条件。