公开(公告)号：EP2997104A4

公开(公告)日：2017-01-25

申请号：EP14797473

申请日：2014-05-06

Applicant: BASF SE

Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625

Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 描述了一种使用化学机械抛光用于抛光衬底或层包含一个或多个III-V族材料，worin的化学 - 机械抛光（CMP）组合物（CMP）组合物包含以下组分：（A）表面改性的二氧化硅 具有在pH为2至6（B）的范围为-15毫伏或低于负的Zeta电位的粒子的一种或多种组分选自（ⅰ）substituiertem和unsubstituiertem三唑不具有芳香环的选定退火以 三唑环，（II）苯并咪唑，（ⅲ）螯合剂选自具有两个或更多羧基基团，脂族羧酸，以及它们的respectivement盐的氨基酸由......组成，和（iv）的均聚物和丙烯酸的共聚物中选择剂， 和respectivement盐，（C）和水（D）任选的一种或多种成分另外，在worin组合物的pH在2至第六的范围

公开(公告)号：EP2507824A4

公开(公告)日：2013-09-25

申请号：EP10832736

申请日：2010-11-25

Applicant: BASF SE

Inventor： RAMAN VIJAY IMMANUEL ,  EBERT SOPHIA ,  BRANDS MARIO ,  LAN YONGQING ,  ZACHARIAS PHILIPP ,  GUBAYDULLIN ILSHAT ,  LI YUZHUO

IPC: H01L21/321 ,  C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

公开(公告)号：EP3180406A4

公开(公告)日：2018-04-11

申请号：EP15831838

申请日：2015-07-24

Applicant: BASF SE

Inventor： LAN YONGQING ,  NOLLER BASTIAN MARTEN ,  JIANG LIANG ,  SHEN DANIEL KWO HUNG ,  GOLZARIAN REZA

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14

CPC classification number: C09K3/14 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

公开(公告)号：EP2997103A4

公开(公告)日：2016-11-02

申请号：EP14797276

申请日：2014-05-06

Applicant: BASF SE

Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 其中所述组合物的pH在2至6的范围内。

公开(公告)号：EP2507332A4

公开(公告)日：2017-08-02

申请号：EP10832737

申请日：2010-11-25

Applicant: BASF SE

Inventor： RAMAN VIJAY IMMANUEL ,  LI YUZHUO ,  BRANDS MARIO ,  LAN YONGQING ,  RUSHING KENNETH ,  RAMJI KARPAGAVALLI

IPC: C09G1/02 ,  B01J13/14 ,  C09K3/14 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

公开(公告)号：EP2997105A4

公开(公告)日：2017-01-25

申请号：EP14797941

申请日：2014-05-05

Applicant: BASF SE

Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

IPC: C09G1/02 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30612 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 描述了一种化学机械抛光（CMP）组合物，其包含以下组分：（A）在pH为2至6（B）的范围内具有-15mV或更低的ζ电位的表面改性二氧化硅颗粒，或 更多的聚乙烯亚胺（C）水（D）任选地一种或多种另外的组分，其中组合物的pH在2至6的范围内。

公开(公告)号：EP2997102A4

公开(公告)日：2017-01-25

申请号：EP14797029

申请日：2014-05-05

Applicant: BASF SE

Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

IPC: C09G1/02 ,  C09K3/14

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 描述了一种化学 - 机械抛光（CMP）组合物包含以下组分：（A）表面改性的二氧化硅颗粒在2至6（B）的范围内具有在pH -15毫伏或更低的负的Zeta电位的一个或 选自N-乙烯基均聚物和N-乙烯基共聚物（C）和水（D）中选择的多种聚合物任选的一种或多种成分另外，在worin组合物的pH在2至第六的范围